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Motorola Electronic Components Datasheet

MPSW51 Datasheet

One Watt High Current Transistors

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MPSW51 pdf
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document
by MPSW51/D
One Watt High Current Transistors
PNP Silicon
COLLECTOR
3
2
BASE
MPSW51
MPSW51A*
*Motorola Preferred Device
1
EMITTER
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Collector – Emitter Voltage MPSW51
MPSW51A
VCEO
–30
–40
Vdc
Collector – Base Voltage
MPSW51
MPSW51A
VCBO
–40
–50
Vdc
Emitter – Base Voltage
Collector Current — Continuous
Total Device Dissipation @ TA = 25°C
Derate above 25°C
VEBO
IC
PD
–5.0
–1000
1.0
8.0
Vdc
mAdc
Watts
mW/°C
Total Device Dissipation @ TC = 25°C
Derate above 25°C
PD
2.5 Watts
20 mW/°C
Operating and Storage Junction
Temperature Range
TJ, Tstg
– 55 to +150
°C
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance, Junction to Ambient
RqJA
125
Thermal Resistance, Junction to Case
RqJC
50
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
°C/W
°C/W
OFF CHARACTERISTICS
Collector – Emitter Breakdown Voltage(1)
(IC = –1.0 mAdc, IB = 0)
MPSW51
MPSW51A
Collector – Base Breakdown Voltage
(IC = –100 mAdc, IE = 0)
MPSW51
MPSW51A
Emitter – Base Breakdown Voltage
(IE = –100 mAdc, IC = 0)
Collector Cutoff Current
(VCB = –30 Vdc, IE = 0)
(VCB = –40 Vdc, IE = 0)
Emitter Cutoff Current
(VEB = –3.0 Vdc, IC = 0)
v v1. Pulse Test: Pulse Width 300 ms, Duty Cycle 2.0%.
MPSW51
MPSW51A
1
2
3
CASE 29–05, STYLE 1
TO–92 (TO–226AE)
Symbol
Min
Max
Unit
V(BR)CEO
V(BR)CBO
V(BR)EBO
–30
–40
–40
–50
–5.0
Vdc
Vdc
Vdc
ICBO
µAdc
— –0.1
— –0.1
IEBO — –0.1 µAdc
Preferred devices are Motorola recommended choices for future use and best overall value.
©MMotootorroollaa,
Small–Signal
Inc. 1996
Transistors,
FETs
and
Diodes
Device
Data
1


Motorola Electronic Components Datasheet

MPSW51 Datasheet

One Watt High Current Transistors

No Preview Available !

MPSW51 pdf
MPSW51 MPSW51A
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (Continued)
Characteristic
Symbol
Min
Max
Unit
ON CHARACTERISTICS
DC Current Gain
(IC = –10 mAdc, VCE = –1.0 Vdc)
(IC = –100 mAdc, VCE = –1.0 Vdc)
(IC = –1000 mAdc, VCE = –1.0 Vdc)
Collector – Emitter Saturation Voltage
(IC = –1000 mAdc, IB = –100 mAdc)
Base – Emitter On Voltage
(IC = –1000 mAdc, VCE = –1.0 Vdc)
SMALL– SIGNAL CHARACTERISTICS
hFE
VCE(sat)
VBE(on)
55
60
50
–0.7 Vdc
–1.2 Vdc
Current–Gain – Bandwidth Product
(IC = –50 mAdc, VCE = –10 Vdc, f = 20 MHz)
Output Capacitance
(VCB = –10 Vdc, IE = 0, f = 1.0 MHz)
fT
Cobo
50
— MHz
30 pF
200
100
70
VCE = –1.0 V
50 TJ = 25°C
–1.0
–0.8 IC =
–10 mA
IC =
–50 mA
–0.6
IC = IC = IC =
IC =
–100 –250 –500 mA –1000 mA
mA mA
–0.4
20
–10
–20
–50 –100 –200
–500
IC, COLLECTOR CURRENT (mA)
Figure 1. DC Current Gain
–1000
–0.2
TJ = 25°C
0
–0.01 –0.02 –0.05 –0.1 –0.2 –0.5 –1.0 –2.0 –5.0 –10 –20 –50 –100
IB, BASE CURRENT (mA)
Figure 2. Collector Saturation Region
–1.0
TJ = 25°C
–0.8 VBE(SAT) @ IC/IB = 10
–0.6
VBE(ON) @ VCE = –1.0 V
–0.4
–0.8
–1.2
–1.6
qVB for VBE
–2.0
–0.2
VCE(SAT) @ IC/IB = 10
0
–1.0 –2.0
–5.0 –10 –20 –50 –100 –200 –500 –1000
IC, COLLECTOR CURRENT (mA)
Figure 3. “ON” Voltages
–2.4
–2.8
–1.0 –2.0
–5.0 –10 –20 –50 –100 –200 –500 –1000
IC, COLLECTOR CURRENT (mA)
Figure 4. Temperature Coefficient
2 Motorola Small–Signal Transistors, FETs and Diodes Device Data


Part Number MPSW51
Description One Watt High Current Transistors
Maker Motorola
Total Page 4 Pages
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