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Mitsubishi Electric Semiconductor
Mitsubishi Electric Semiconductor

RM10TN-H Datasheet Preview

RM10TN-H Datasheet

Three-Phase Diode Bridge Modules

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RM10TN-H pdf
RM10TN-H
A
D
G
H
E
B
F
R "Y"
~~~
TYP
KN
JL
P
+-
WM
S
R
Q
Z
φ"X"
UV
T
C
~ ~ ~+ -
Outline Drawing and Circuit Diagram
Dimensions
A
B
C
D
E
F
G
H
J
K
L
M
Inches
2.83
1.18
0.35
2.55
0.59
0.54
2.32
2.21
0.48
0.40
1.60
0.05
Millimeters
71.8
30.0
9.0
64.8
15.0
13.7
58.8
56.2
12.08
10.16
40.64
1.20
Dimensions
N
P
Q
R
S
T
U
V
W
X
Y
Z
Inches
0.16
0.02
0.55
0.20
0.35
0.14
0.45
0.71
0.06
0.16
0.16
0.08
Millimeters
4.0
0.6
14.0
5.0
9.0
3.5
11.5
18.0
1.5
4.0
4.0
2.0
Description:
Mitsubishi Three-Phase Diode
Bridge Modules are designed for
use in applications requiring rectifi-
cation of three-phase AC lines into
DC voltage. Each module consists
of six diodes and the interconnect
required to form a complete three-
phase bridge circuit. Each diode is
electrically insulated from the
mounting base plate for easy
mounting on a common heatsink
with other components.
Features:
ٗ Isolated Mounting
ٗ Metal Base Plate
ٗ Low Thermal Impedance
Applications:
ٗ Motor Control
ٗ Inverters
ٗ UPS
Ordering Information:
RM10TN-H
Sep.1998



Mitsubishi Electric Semiconductor
Mitsubishi Electric Semiconductor

RM10TN-H Datasheet Preview

RM10TN-H Datasheet

Three-Phase Diode Bridge Modules

No Preview Available !

RM10TN-H pdf
RM10TN-H
Absolute Maximum Ratings, Tj = 25 °C unless otherwise specified
Ratings
Repetitive Peak Reverse Voltage
Non-Repetitive Peak Reverse Voltage
Recommended AC Input Voltage
DC Output Current (Tb = 100°C)
Surge (Non-Repetitive) Forward Current (One Half Cycle at 60Hz, Peak Value)
I2t for Fusing (Value for One Cycle of Surge Current)
Junction Temperature
Storage Temperature
Operating Frequency
Maximum Mounting Torque M3.5 Mounting Screw
Maximum Mounting Torque M3.5 Terminal Screw
Isolation Voltage (Main Terminal to Baseplate, AC 1 min.)
Symbol
VRRM
VRSM
EA
IO
IFSM
I2t
Tj
Tstg
f
Viso
Electrical and Thermal Characteristics, Tj = 25 °C unless otherwise specified
Characteristics
Symbol
Test Conditions
Min.
Repetitive Reverse Current
Forward Voltage Drop
IRRM
VFM
Tj = 125°C, VRRM = Rated
Tj = 25°C, IFM = 20A,
Instantaneous Meaurement
Thermal Resistance
Thermal Resistance
Isolation Resistance
Rth(j-b)
Rth(b-f)
Junction to Base Plate
Base to Fin, Thermal Grease Applied
At 500V DC
10
Between Terminal and Base Plate
RM10TN-H
800
840
220
12
200
166
-40 ~ +125
-40 ~ +125
1000
0.78 ~ 0.98
0.78 ~ 0.98
2500
Units
Volts
Volts
Volts
Amperes
Amperes
A2sec
°C
°C
Hz
N·m
N·m
Vrms
Typ. Max. Units
– 8.0 mA
– 1.5 Volts
- 2.2 °C/ W
– 0.3 °C/W
– – M
ALLOWABLE DC OUTPUT CURRENT
VS. BASE PLATE TEMPERATURE
120
100
80
60
40
20
0
0 4 8 12 16
DC OUTPUT CURRENT, Io, (AMPERES)
Sep.1998


Part Number RM10TN-H
Description Three-Phase Diode Bridge Modules
Maker Mitsubishi Electric Semiconductor
Total Page 2 Pages
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