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Mitsubishi Electric Semiconductor
Mitsubishi Electric Semiconductor

RM100CA-XXF Datasheet Preview

RM100CA-XXF Datasheet

HIGH SPEED SWITCHING USE INSULATED TYPE

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RM100CA-XXF pdf
RM100CA/C1A-XXF
MITSUBISHI FAST RECOVERY DIODE MODULES
RM100CA/C1A-XXF
HIGH SPEED SWITCHING USE
INSULATED TYPE
IDC DC current ................................ 100A
VRRM Repetitive peak reverse voltage
.. 600/800/1000/1200V
trr Reverse recovery time ............. 0.8µs
Insulated Type
UL Recognized
Yellow Card No. E80276 (N)
File No. E80271
APPLICATION
Free wheel use, Welders
OUTLINE DRAWING & CIRCUIT DIAGRAM
53.5
43.3
16
R6
φ5.3 8
3–M4
33
3.5 3.5
LABEL
CA
C1A
Dimensions in mm
Feb.1999



Mitsubishi Electric Semiconductor
Mitsubishi Electric Semiconductor

RM100CA-XXF Datasheet Preview

RM100CA-XXF Datasheet

HIGH SPEED SWITCHING USE INSULATED TYPE

No Preview Available !

RM100CA-XXF pdf
MITSUBISHI FAST RECOVERY DIODE MODULES
RM100CA/C1A-XXF
HIGH SPEED SWITCHING USE
INSULATED TYPE
ABSOLUTE MAXIMUM RATINGS (Tj=25°C)
Symbol
Parameter
Voltage class
12 16* 20*
VRRM
VDRM
Repetitive peak reverse voltage
Non-repetitive peak reverse voltage
600
720
800 1000
960 1100
VR (DC)
Reverse DC voltage
480 640 800
* Order made
Symbol
Parameter
Conditions
IDC
IFSM
I2t
DC output current
Surge (non-repetitive) forward current
I2t for fusing
Resistive load, TC=75°C
One half cycle at 60Hz, peak value
Value for one cycle of surge current
Tj Junction temperature
Tstg Storage temperature
Viso Isolation voltage
Charged part to case
— Mounting torque
Main terminal screw M4
Mounting screw M5
— Weight
Typical value
24
1200
1350
960
Ratings
100
2000
16.7 × 103
– 40~150
– 40~125
2500
0.98~1.47
10~15
1.47~1.96
15~20
90
Unit
V
V
V
Unit
A
A
A2s
°C
°C
V
N·m
kg·cm
N·m
kg·cm
g
ELECTRICAL CHARACTERISTICS
Symbol
Parameter
Test conditions
IRRM
Repetitive reverse current
VFM Forward voltage
trr Reverse recovery time
Qrr Reverse recovery charge
Rth (j-c)
Thermal resistance
Rth (c-f)
Contact thermal resistance
*1 12 class: VR=300V 20, 24 class: VR=600V
Tj=150°C, VRRM applied
Tj=25°C, IFM=100A, instantaneous meas.
IFM=100A, di/dt=–200A/µs, VR=300/600V*1, Tj=150°C
Junction to case
Case to fin, conductive grease applied
Min.
Limits
Typ.
Max.
20
1.5
0.8
60
0.5
0.3
Unit
mA
V
µs
µC
°C/ W
°C/ W
Feb.1999


Part Number RM100CA-XXF
Description HIGH SPEED SWITCHING USE INSULATED TYPE
Maker Mitsubishi Electric Semiconductor
Total Page 3 Pages
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