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2729-170 Datasheet

Radar

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2729-170 pdf
2729-170R4
2729-170
170 Watts, 38 Volts, 100µs, 10%
Radar 2700-2900 MHz
GENERAL DESCRIPTION
The 2729-170 is an internally matched, COMMON BASE bipolar transistor
capable of providing 170 Watts of pulsed RF output power at 100µs pulse
width, 10% duty factor across the 2700 to 2900 MHz band. The transistor
prematch and test fixture has been optimized through the use of Pulsed
Automated Load Pull. This hermetically solder-sealed transistor is specifically
designed for S-band radar applications. It utilizes gold metallization and emitter
ballasting to provide high reliability and supreme ruggedness.
CASE OUTLINE
55KS-1
Common Base
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ABSOLUTE MAXIMUM RATINGS
Maximum Power Dissipation
Device Dissipation @ 25°C1
570 W
Maximum Voltage and Current
Collector to Base Voltage (BVces)
Emitter to Base Voltage (BVebo)
Collector Current (Ic)
Maximum Temperatures
65 V
3.0 V
17 A
Storage Temperature
-65 to +200 °C
Operating Junction Temperature +200 °C
ELECTRICAL CHARACTERISTICS @ 25°C
SYMBOL CHARACTERISTICS
TEST CONDITIONS
Pout
Pin
Pg
ηc
VSWR
Power Output
Power Input
Power Gain
Collector Efficiency
Load Mismatch Tolerance1
F=2700-2900 MHz
Vcc = 38 Volts
Pulse Width = 100 µs
Duty Factor = 10%
F = 2900 MHz, Po = 170 W
FUNCTIONAL CHARACTERISTICS @ 25°C
BVebo
Iebo
BVces
Ices
hFE
θjc1
Emitter to Base Breakdown
Emitter to Base Leakage
Collector to Emitter Breakdown
Collector to Emitter Leakage
DC – Current Gain
Thermal Resistance
Ie = 30 mA
Veb = 1.5 V
Ic = 120 mA
Vce = 36 V
Vce = 5V, Ic = 600 mA
NOTE: 1. At rated output power and pulse conditions
MIN
170
8.2
52
TYP
8.6
60
MAX
25.7
2:1
UNITS
W
W
dB
%
3.0 V
2 mA
56 65
V
7 mA
18 50
0.30 °C/W
Issue April 2005
MICROSEMI RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE. TO VERIFY THE CURRENT VERSION PLEASE
CHECK OUR WEB SITE AT WWW.MICROSEMI.COM OR CONTACT OUR FACTORY DIRECTLY.


  Microsemi Electronic Components Datasheet  

2729-170 Datasheet

Radar

No Preview Available !

2729-170 pdf
2729-170R4
2729-170
Vcc = 38 Volts, Pulse Width = 100µs, Duty = 10 %
G2754-2,
Product is in characterization, additional curves will be inserted at the conclusion.
200.0
180.0
160.0
140.0
120.0
100.0
80.0
60.0
40.0
20.0
0.0
0.0
Pout vs. Pin
2.7GHz
2.8GHz
2.9GHz
10.0 20.0
Pin (W)
30.0
Efficiency vs Power Out
70.0
60.0
50.0
40.0
30.0
20.0
10.0
0.0
0.0
50.0 100.0 150.0
Power Output (W)
200.0
2.7GHz
2.8GHz
2.9GHz
Input and Load Impedance
Power Gain vs Power Out
9
8
7
6
5
4
3
2
1
0
0.0 50.0 100.0 150.0 200.0
Pout (W)
2.7GHz
2.8GHz
2.9GHz
Input Impedance vs Frequency
15
10
5
0
2.7 2.75 2.8 2.85 2.9
-5
Frequency - GHz
Rin
jXin
Load Impedance vs Frequency
4
2
0
-2 2.7 2.75 2.8 2.85 2.9
-4
-6
Frequency - GHz
Rl
jXl
Note: Z in is looking into the transistor input, Z Load is looking into the Output Circuit.
MICROSEMI RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE. TO VERIFY THE CURRENT VERSION PLEASE
CHECK OUR WEB SITE AT WWW.MICROSEMI.COM OR CONTACT OUR FACTORY DIRECTLY.


Part Number 2729-170
Description Radar
Maker Microsemi Corporation
Total Page 4 Pages
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