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  Microsemi Electronic Components Datasheet  

2N5671 Datasheet

(2N5671 / 2N5672) NPN HIGH POWER SILICON TRANSISTOR

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2N5671 pdf
TECHNICAL DATA
NPN HIGH POWER SILICON TRANSISTOR
Qualified per MIL-PRF-19500/488
Devices
2N5671
2N5672
Qualified Level
JAN
JANTX
JANTXV
MAXIMUM RATINGS
Ratings
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Base Current
Collector Current
Total Power Dissipation
@ TA = +250C (1)
@ TC = +250C (2)
Operating & Storage Temperature Range
THERMAL CHARACTERISTICS
Characteristics
Thermal Resistance, Junction-to-Case
1) Derate linearly 34.2 mW/0C for TA > +250C
2) Derate linearly 800 mW/0C for TC > +250C
Symbol 2N5671 2N5672
VCEO
VCBO
VEBO
IB
90 120
120 150
7.0
10
IC
PT
www.DataSheet.net/
30
6.0
140
Top, Tstg
-65 to +200
Symbol
RθJC
Max.
1.25
ELECTRICAL CHARACTERISTICS (TC = 250C unless otherwise noted)
Characteristics
Symbol
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage
IC = 200 mAdc
2N5671
2N5672
V(BR)CEO
Collector-Emitter Breakdown Voltage
IC = 200 mAdc
2N5671
2N5672
V(BR)CER
Collector-Emitter Breakdown Voltage
IC = 200 mAdc
2N5671
2N5672
V(BR)CEX
Collector-Emitter Cutoff Current
VCE = 80 Vdc
Collector-Emitter Cutoff Current
ICEO
VCE = 110 Vdc, VBE = 1.5 Vdc
VCE = 135 Vdc, VBE = 1.5 Vdc
2N5671
2N5672
ICEX
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803
Unit
Vdc
Vdc
Vdc
Adc
Adc
W
W
0C
Unit
0C/W
TO-3*
(TO-204AA)
*See appendix A for
package outline
Min. Max.
Unit
90 Vdc
120
110 Vdc
140
120 Vdc
150
10 mAdc
12 mAdc
10
120101
Page 1 of 2
Datasheet pdf - http://www.DataSheet4U.co.kr/


  Microsemi Electronic Components Datasheet  

2N5671 Datasheet

(2N5671 / 2N5672) NPN HIGH POWER SILICON TRANSISTOR

No Preview Available !

2N5671 pdf
2N5671, 2N5672 JAN SERIES
ELECTRICAL CHARACTERISTICS (con’t)
Characteristics
OFF CHARACTERISTICS (con’t)
Collector-Base Cutoff Current
VCB = 120 Vdc
2N5671
VCB = 150 Vdc
Emitter-Base Cutoff Current
2N5672
VEB = 7.0 Vdc
ON CHARACTERISTICS (3)
Forward-Current Transfer Ratio
IC = 15 Adc, VCE = 2.0 Vdc
IC = 20 Adc, VCE = 5.0 Vdc
Collector-Emitter Saturation Voltage
IC = 15 Adc, IB = 1.2 Adc
IC = 30 Adc, IB = 6.0Adc
Base-Emitter Saturation Voltage
IC = 15 Adc, IB = 1.2 Adc
DYNAMIC CHARACTERISTICS
Magnitude of Common Emitter Small-Signal Short-Circuit
Forward Current Transfer Ratio
IC = 2.0 Adc, VCE = 10 Vdc, f = 5.0 MHz
Output Capacitance
VCB = 10 Vdc, IE = 0, 100 kHz f 1.0 MHz
SWITCHING CHARACTERISTICS
Turn-On Time
VCC = 30 ± 2.0 Vdc; IC = 15 Adc; IB1 = 1.2 Adc
Turn-Off Time
VCC = 30 ± 2.0 Vdc; IC = 15 Adc; IB1 = IB2 = 1.2 Adc
SAFE OPERATING AREA
DC Tests
TC = +250C, 1 Cycle, t = 1.0 s
Test
VCE = 24 Vdc, IC = 5.8 Adc
Test 2
VCE = 45 Vdc, IC = 0.9 Adc
Test 3
VCE = 4.67 Vdc, IC = 30 Adc
Test 4
VCE = 90 Vdc, IC = 0.19 Adc
Test 5
2N5671
VCE = 120 Vdc, IC = 0.11 Adc
2N5672
(3) Pulse Test: Pulse Width = 300µs, Duty Cycle 2.0%.
www.DataSheet.net/
Symbol
ICBO
IEBO
hFE
VCE(sat)
VBE(sat)
hfe
Cobo
ton
toff
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803
Min. Max. Unit
25 mAdc
25
10 mAdc
20 100
20
0.75 Vdc
5.0
1.5 Vdc
10 40
900
0.5
1.5
pF
µs
µs
120101
Page 2 of 2
Datasheet pdf - http://www.DataSheet4U.co.kr/


Part Number 2N5671
Description (2N5671 / 2N5672) NPN HIGH POWER SILICON TRANSISTOR
Maker Microsemi
Total Page 2 Pages
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