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  Microchip Technology Semiconductor Electronic Components Datasheet  

MCP1624 Datasheet

Low-Voltage Input Boost Regulator

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MCP1624 pdf
MCP1623/24
Low-Voltage Input Boost Regulator
for PIC® Microcontrollers
Features
• Up to 96% Typical Efficiency
• 425 mA Typical Peak Input Current Limit:
- IOUT > 50 mA @ 1.2V VIN, 3.3V VOUT
- IOUT > 175 mA @ 2.4V VIN, 3.3V VOUT
- IOUT > 175 mA @ 3.3V VIN, 5.0V VOUT
• Low Start-Up Voltage: 0.65V, 3.3V VOUT @ 1 mA
(typical)
• Low Operating Input Voltage: 0.35V, typical
3.3VOUT @ 1 mA
• Adjustable Output Voltage Range: 2.0V to 5.5V
• Maximum Input Voltage VOUT < 5.5V
• Automatic PFM/PWM Operation (MCP1624)
• PWM-Only Operation (MCP1623)
• PWM Operation: 500 kHz
• Low Device Quiescent Current: 19 µA, typical
PFM Mode
• Internal Synchronous Rectifier
• Internal Compensation
• Inrush Current Limiting and Internal Soft Start
• True Load Disconnect
• Shutdown Current (All States): <1 µA
• Low Noise, Anti-Ringing Control
• Overtemperature Protection
• Available Packages:
- 6-Lead SOT-23
- 8-Lead 2 x 3 DFN
Applications
• One, Two and Three-Cell Alkaline and NiMH/NiCd
Low-Power PIC® Microcontroller Applications
General Description
The MCP1623/24 is a compact, high-efficiency,
fixed-frequency, synchronous step-up DC-DC
converter. It provides an easy-to-use power supply
solution for PIC® microcontroller applications powered
by either single-cell, two-cell, or three-cell alkaline,
NiCd, NiMH, and single-cell Li-Ion or Li-Polymer
batteries.
Low-voltage technology allows the regulator to start up
without high inrush current or output voltage overshoot
from a low 0.65V input. High efficiency is accomplished
by integrating the low-resistance N-Channel Boost
switch and synchronous P-Channel switch. All
compensation and protection circuitry are integrated to
minimize external components. For standby
applications, the MCP1624 operates and consumes
only 19 µA while operating at no load.
A “true” Load Disconnect mode provides input to output
isolation while disabled (EN = GND) by removing the
normal boost regulator diode path from input to output.
This mode consumes less than 1 µA of input current.
Output voltage is set by a small external resistor
divider.
Package Types
MCP1623/24
6-Lead SOT-23
SW 1
6 VIN
GND 2
5 VOUT
EN 3
4 VFB
MCP1623/24
2x3 DFN*
VFB 1
8 VIN
SGND 2 EP 7 VOUTS
PGND 3 9 6 VOUTP
EN 4
5 SW
* Includes Exposed Thermal Pad (EP); see Table 3-1.
2010-2016 Microchip Technology Inc.
DS40001420D-page 1



  Microchip Technology Semiconductor Electronic Components Datasheet  

MCP1624 Datasheet

Low-Voltage Input Boost Regulator

No Preview Available !

MCP1624 pdf
MCP1623/24
Typical Application
VIN
0.9V to 1.7V
+ CIN
4.7 µF
-
L1
4.7 µH
SW
VOUT
VIN
EN VFB
GND
VOUT
3.3V
976 k
562 k
COUT
10 µF
VDD
PIC® MCU
VSS
FIGURE 1:
Typical Application Circuit.
FIGURE 2:
100
90 VIN = 2.5V
80 VIN = 1.2V
70
60
50
40
30
20
0.01
0.1
VIN = 0.8V
1 10
IOUT (mA)
MCP1624 Efficiency vs. IOUT, VOUT = 3.3V.
100
1000
DS40001420D-page 2
2010-2016 Microchip Technology Inc.



  Microchip Technology Semiconductor Electronic Components Datasheet  

MCP1624 Datasheet

Low-Voltage Input Boost Regulator

No Preview Available !

MCP1624 pdf
MCP1623/24
1.0 ELECTRICAL CHARACTERISTICS
Absolute Maximum Ratings †
EN, FB, VIN, VSW, VOUT – GND ...............................................................................................................................+6.5V
EN, FB ...........................................................................................................<maximum of VOUT or VIN > (GND – 0.3V)
Output Short-Circuit Current ........................................................................................................................... Continuous
Power Dissipation ................................................................................................................................. Internally Limited
Storage Temperature ..............................................................................................................................-65°C to +150°C
Ambient Temperature with Power Applied ................................................................................................ -40°C to +85°C
Operating Junction Temperature.............................................................................................................-40°C to +125°C
ESD Protection on All Pins:
HBM............................................................................................................................................................. 3 kV
MM .............................................................................................................................................................. 300V
† Notice: Stresses above those listed under “Maximum Ratings” may cause permanent damage to the device. This
is a stress rating only and functional operation of the device at those or any other conditions above those indicated in
the operational sections of this specification is not intended. Exposure to maximum rating conditions for extended
periods may affect device reliability.
DC CHARACTERISTICS
Electrical Characteristics: Unless otherwise indicated, VIN = 1.2V, COUT = CIN = 10 µF, L = 4.7 µH, VOUT = 3.3V,
IOUT = 15 mA, TA = +25°C.
Boldface specifications apply over the TA range of -40°C to +85°C.
Parameters
Sym. Min.
Typ.
Max. Units
Conditions
Input Characteristics
Minimum Start-Up Voltage
Minimum Input Voltage after
Start-Up
VIN — 0.65 0.8 V Note 1
VIN — 0.35 — V Note 1
Output Voltage Adjust Range
Maximum Output Current
Feedback Voltage
Feedback Input Bias Current
Quiescent Current – PFM mode
VOUT
IOUT
VFB
IVFB
IQPFM
2.0
50
1.120
1.21
10
19
5.5
1.299
30
V VOUT VIN (Note 2)
mA 1.5V VIN, 3.3V VOUT
V
pA
µA Measured at VOUT = 4.0V;
EN = VIN, IOUT = 0 mA
(Note 3)
Quiescent Current – PWM mode IQPWM
Quiescent Current – Shutdown IQSHDN
220
0.7
— µA Measured at VOUT; EN =
VIN IOUT = 0 mA (Note 3)
2.3 µA VOUT = EN = GND;
Includes N-Channel and
P-Channel switch leakage
NMOS Switch Leakage
INLK
0.3
— µA VIN = VSW = 5V; VOUT =
5.5V VEN = VFB = GND
PMOS Switch Leakage
IPLK — 0.05
— µA VIN = VSW = GND;
VOUT = 5.5V
NMOS Switch ON Resistance RDS(ON)N
0.6
VIN = 3.3V, ISW = 100 mA
Note 1: 3.3 kresistive load, 3.3VOUT (1 mA).
2: For VIN > VOUT, VOUT will not remain in regulation.
3: IQ is measured from VOUT; VIN quiescent current will vary with boost ratio. VIN quiescent current can be
estimated by: (IQPFM * (VOUT/VIN)), (IQPWM * (VOUT/VIN)).
4: Peak current limit determined by characterization, not production tested
5: 220resistive load, 3.3VOUT (15 mA).
2010-2016 Microchip Technology Inc.
DS40001420D-page 3




Part Number MCP1624
Description Low-Voltage Input Boost Regulator
Maker Microchip Technology
Total Page 30 Pages
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