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MXP6010CTS Datasheet Preview

MXP6010CTS Datasheet

60V N-Channel MOSFET

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MXP6010CTS pdf
60V N-Channel MOSFET
MXP6010CTS Datasheet
Applications:
Power Supply
DC-DC Converters
Features:
Lead Free
Low RDS(ON) to Minimize Conductive Loss
Low Gate Change for Fast Switching Application
Optimized BVDSS Capability
Ordering Information
Part Number
Package
MXP6010CTS
TO220
Brand
MXP
VDSS
60 V
RDS(ON) (Max)
10.0 mΩ
IDa
107 A
Absolute Maximum Ratings
Tc=25unless otherwise specified
Symbol
Parameter
Value
Units
VDS Drain-to-Source Voltage
IDa
Continuous Drain Current
(TC=25)
60 V
107 A
EAS Single Pulse Avalanche Energy (L=1mH)
570 mJ
IAS Pulsed Avalanche Energy
Figure.9
A
TJ and TSTG Operating Junction and Storage Temperature Range
-55 to 175
a. Calculated continuous current based upon maximum allowable junction temperature, +175. Package limitation current is 80A.
OFF Characteristics
TJ=25unless otherwise specified
Symbol
Parameter
BVDSS
Drain-to-Source Breakdown
Voltage
IDSS
Drain-to-Source Leakage
Current
Gate-to-Source Forward
IGSS
Leakage
Gate-to-Source Reverse
Leakage
©MaxPower Semiconductor Inc.
Min Typ Max Units
Test Conditions
60 V VGS=0V, ID=250µA
1 VDS=48V, VGS=0V
µA
100 VDS=48V, VGS=0V TJ=125
100 VGS=+20V
nA
100 VGS= -20V
1 MXP6010CTS Rev 1.0, Jan 2011



MaxPower
MaxPower

MXP6010CTS Datasheet Preview

MXP6010CTS Datasheet

60V N-Channel MOSFET

No Preview Available !

MXP6010CTS pdf
ON Characteristics
TJ=25unless otherwise specified
Symbol
Parameter
Min Typ Max Units
Test Conditions
RDS(ON)
Static Drain-to-Source
On-Resistance
8.5 10 mΩ VGS= 10V, ID=24A
VGS(TH)
Gate Threshold Voltage 2
4 V VDS=VGS, ID=250µA
Dynamic Characteristics
Essentially independent of operating temperature
Symbol
Parameter
Min
Ciss Input Capacitance
Coss Output Capacitance
Crss Reverse Transfer
Capacitance
Qg Total Gate Charge
Qgs Gate-to-Source Charge
Qgd Gate-to-Drain (“Miller”)
Charge
td(on) Turn-on Delay Time
tr Rise Time
td(off)
Turn-off Delay Time
tf Fall Time
Typ
2679
343
120
40
16
11
11
45
26
11
Max Units
Test Conditions
pF VGS=0V, VDS=25V, f=1.0MHz
nC VDD=30V, ID=38A, VG=10V
ns VDD=30V, ID=38A, VG=10V,
RG=2.5Ω
Source-Drain Diode Characteristics
Tc=25unless otherwise specified
Symbol
Parameter
Min Typ Max Units
Test Conditions
VSD Diode Forward Voltage
1.2 V IS=30A, VGS=0V
Published by
MaxPower Semiconductor Inc.
4800 Great America Parkway, Suite# 205, Santa Clara, CA 95054
©MaxPower Semiconductor Inc.
2
All Rights Reserved.
MXP6010CTS Rev 1.0, Jan 2011


Part Number MXP6010CTS
Description 60V N-Channel MOSFET
Maker MaxPower
Total Page 5 Pages
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