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Leshan Radio Company
Leshan Radio Company

LDTC115EWT1G Datasheet Preview

LDTC115EWT1G Datasheet

Bias Resistor Transistor

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LDTC115EWT1G pdf
LESHAN RADIO COMPANY, LTD.
Bias Resistor Transistor
NPN Silicon Surface Mount Transistor
with Monolithic Bias Resistor Network
Applications
Inverter, Interface, Driver
Features
1) Built-in bias resistors enable the configuration of an
inverter circuit without connecting external input
resistors (see equivalent circuit).
2) The bias resistors consist of thin-film resistors with
complete isolation to allow positive biasing of the input.
They also have the advantage of almost completely
eliminating parasitic effects.
3) Only the on/off conditions need to be set for operation,
making the device design easy.
We declare that the material of product compliance with
RoHS requirements.
zAbsolute maximum ratings (Ta=25°C)
Parameter
Supply voltage
Input voltage
Output current
Collector Power dissipation
Junction temperature
Storage temperature
Symbol
VCC
VI
IO
I C(Max.)
Pc
Tj
Tstg
Limits
50
10 to +40
20
100
200
150
55 to +150
Unit
V
V
mA
mA
mW
°C
°C
LDTC115EWT1G
3
1
2
SOT–323 (SC–70)
1
BASE
R1
R2
3
COLLECTOR
2
EMITTER
DEVICE MARKING AND RESISTOR VALUES
Device
Marking R1 (K) R2 (K)
Shipping
LDTC115EWT1G
N6
100
100 3000/Tape & Reel
LDTC115EWT3G
N6
100
100 10000/Tape & Reel
zElectrical characteristics (Ta=25°C)
Parameter
Symbol
Input voltage
VI(off)
VI(on)
Output voltage
VO(on)
Input current
II
Output current
IO(off)
DC current gain
GI
Input resistance
R1
Resistance ratio
R2/R1
Transition frequency
fT
Characteristics of built-in transistor
Min.
3
82
70
0.8
Typ. Max.
0.5
−−
0.1 0.3
0.15
0.5
−−
100 130
1 1.2
250
Unit
V
V
mA
µA
k
MHz
Conditions
VCC=5V, IO=100µA
VO=0.3V, IO=1mA
IO=5mA, II=0.25mA
VI=5V
VCC=50V, VI=0V
IO=5mA, VO=5V
VCE=10V, IE=−5mA, f=100MHz
1/2



Leshan Radio Company
Leshan Radio Company

LDTC115EWT1G Datasheet Preview

LDTC115EWT1G Datasheet

Bias Resistor Transistor

No Preview Available !

LDTC115EWT1G pdf
LESHAN RADIO COMPANY, LTD.
LDTC115EWT1G
SC−70 (SOT−323)
D
e1
3
HE
1
E
2
b
e
0.05 (0.002)
A1
A A2
SOLDERING FOOTPRINT*
0.65
0.025
0.65
0.025
L
0.9
0.035
0.7
0.028
1.9
0.075
ǒ ǓSCALE 10:1
mm
inches
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
MILLIMETERS
DIM MIN NOM MAX
A 0.80
0.90
1.00
A1 0.00
0.05
0.10
A2 0.7 REF
b 0.30 0.35 0.40
c 0.10 0.18 0.25
D 1.80
2.10
2.20
E 1.15
1.24
1.35
e 1.20 1.30 1.40
e1 0.65 BSC
L 0.425 REF
c H E 2.00 2.10 2.40
MIN
0.032
0.000
0.012
0.004
0.071
0.045
0.047
0.079
INCHES
NOM
0.035
0.002
0.028 REF
0.014
0.007
0.083
0.049
0.051
0.026 BSC
0.017 REF
0.083
MAX
0.040
0.004
0.016
0.010
0.087
0.053
0.055
0.095
GENERIC
MARKING DIAGRAM
XXM
1
XX = Specific Device Code
M = Date Code
G = Pb−Free Package
*This information is generic. Please refer to
device data sheet for actual part marking.
Pb−Free indicator, “G” or microdot “ G”,
may or may not be present.
2/2


Part Number LDTC115EWT1G
Description Bias Resistor Transistor
Maker Leshan Radio Company
Total Page 2 Pages
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