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2SA1015 Datasheet Preview

2SA1015 Datasheet

PNP Transistor

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2SA1015 pdf
SMD Type
TransistIoCrs
PNP Transistor
2SA1015
Features
High voltage and high current
VCEO:=-50V(min.),IC=-150mA(max.)
Low niose: NF=1dB(Typ.) at f=1KHz
SOT-23
2.9+0.1
-0.1
0.4+0.1
-0.1
3
12
0.95+0.1
-0.1
1.9+0.1
-0.1
Unit: mm
0.1+0.05
-0.01
1.Base
2.Emitter
3.collector
Absolute Maximum Ratings Ta = 25
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current -Continuous
Collector Power Dissipation
Junction Temperature
Storage Temperature
Symbol
VCBO
VCEO
VEBO
IC
PC
TJ
Tstg
Rating
-50
-50
-5
150
200
125
-55 to 125
Unit
V
V
V
mA
mW
Electrical Characteristics Ta = 25
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Base-emitter saturation voltage
Transition frequency
Symbol
VCBO
VCEO
VEBO
ICBO
ICEO
IEBO
hFE
VCE(sat)
VBE(sat)
fT
Testconditons
Ic= -100 A, IE=0
Ic= -0.1mA, IB=0
IE= -100 A, IC=0
VCB=-50V , IE=0
VCE= -50V , IB=0
VEB=- 5V , IC=0
VCE=-6V, IC= -2mA
IC=-100 mA, IB= -10mA
IC=-100 mA, IB= -10mA
VCE=-10V, IC= -1mA,f=30MHz
Min Typ Max Unit
-50 V
-50 V
-5 V
-0.1 A
-0.1 A
-0.1 A
130 400
-0.3 V
-1.1 V
80 MHz
hFE Classification
Marking
Rank
hFE
BA
LH
130 200
200 400
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Part Number 2SA1015
Description PNP Transistor
Maker Kexin
Total Page 1 Pages
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