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Intersil Electronic Components Datasheet

RFP30N06LE Datasheet

30A/ 60V/ ESD Rated/ 0.047 Ohm/ Logic Level N-Channel Power MOSFETs

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RFP30N06LE pdf
Data Sheet
RFP30N06LE, RF1S30N06LESM
April 1999 File Number 3629.2
[ /Title
(RFP3
0N06L
E,
RF1S3
0N06L
ESM)
/Sub-
ject
(30A,
60V,
ESD
Rated,
0.047
Ohm,
Logic
Level
N-
Chan-
nel
Power
MOS-
FETs)
/Autho
r ()
/Key-
words
(Inter-
sil
Corpo-
ration,
ESD
Rated,
0.047
Ohm,
Logic
Level
N-
Chan-
30A, 60V, ESD Rated, 0.047 Ohm, Logic
Level N-Channel Power MOSFETs
These are N-Channel power MOSFETs manufactured using
the MegaFET process. This process, which uses feature
sizes approaching those of LSI integrated circuits gives
optimum utilization of silicon, resulting in outstanding
performance. They were designed for use in applications
such as switching regulators, switching converters, motor
drivers and relay drivers. These transistors can be operated
directly from integrated circuits.
These transistors incorporate ESD protection and are
designed to withstand 2kV (Human Body Model) of ESD.
Formerly developmental type TA49027.
Ordering Information
PART NUMBER
PACKAGE
BRAND
RFP30N06LE
TO-220AB
F30N06LE
RF1S30N06LESM TO-263AB
1S30N06L
NOTE: When ordering use the entire part number. Add suffix, 9A, to
obtain the TO-263 variant in tape and reel i.e. RF1S30N06LESM9A.
Packaging
JEDEC TO-220AB
DRAIN (FLANGE)
SOURCE
DRAIN
GATE
Features
• 30A, 60V
• rDS(ON) = 0.047
• 2kV ESD Protected
• Temperature Compensating PSPICE™ Model
• Peak Current vs Pulse Width Curve
• UIS Rating Curve
• Related Literature
- TB334 “Guidelines for Soldering Surface Mount
Components to PC Boards”
Symbol
D
G
S
JEDEC TO-263AB
GATE
SOURCE
DRAIN
(FLANGE)
6-260
CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures.
PSPICE™ is a trademark of MicroSim Corporation.
http://www.intersil.com or 407-727-9207 | Copyright © Intersil Corporation 1999


Intersil Electronic Components Datasheet

RFP30N06LE Datasheet

30A/ 60V/ ESD Rated/ 0.047 Ohm/ Logic Level N-Channel Power MOSFETs

No Preview Available !

RFP30N06LE pdf
RFP30N06LE, RF1S30N06LESM
Absolute Maximum Ratings TA = 25oC, Unless Otherwise Specified
Drain to Source Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDSS
Drain to Gate Voltage (RGS = 20kΩ) (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . VDGR
Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGS
Continuous Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .ID
Pulsed Drain Current (Note 3) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IDM
Pulsed Avalanche Rating . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . EAS
Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PD
Derate Above 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Electrostatic Discharge Rating, MIL-STD-883, Category B(2). . . . . . . . . . . . . . . .ESD
Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TJ, TSTG
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . TL
Package Body for 10s, See Techbrief 334. . . . . . . . . . . . . . . . . . . . . . . . . . . . Tpkg
RFP30N06LE, RF1S30N06LESM
60
60
+10, -8
30
Refer to Peak Current Curve
Refer to UIS Curve
96
0.645
2
-55 to 175
300
260
UNITS
V
V
V
A
W
W/oC
kV
oC
oC
oC
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTE:
1. TJ = 25oC to 150oC.
Electrical Specifications TC = 25oC, Unless Otherwise Specified
PARAMETER
SYMBOL
TEST CONDITIONS
MIN TYP MAX UNITS
Drain to Source Breakdown Voltage
Gate to Threshold Voltage
Zero Gate Voltage Drain Current
Gate to Source Leakage Current
Drain to Source On Resistance (Note 2)
Turn-On Time
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-Off Time
BVDSS
VGS(TH)
IDSS
IGSS
rDS(ON)
tON
td(ON)
tr
td(OFF)
tf
tOFF
ID = 250µA, VGS = 0V, Figure 11
VGS = VDS, ID = 250µA, Figure 10
VDS = Rated BVDSS, VGS = 0
VDS = 0.8 x Rated BVDSS, VGS = 0, TC = 150oC
VGS = +10, -8V
ID = 30A, VGS = 5V, Figure 9
VDD = 30V, ID = 30A, RL = 1, VGS = 5V,
RGS = 2.5Ω,
Figures 13, 16, 17
60
1
-
-
-
-
-
-
-
-
-
-
--V
-2V
- 25 µA
- 250 µA
- ±10 µA
- 0.047
- 140 ns
11 - ns
88 - ns
30 - ns
40 - ns
- 100 ns
Total Gate Charge
Gate Charge at 5V
Threshold Gate Charge
Qg(TOT)
Qg(5)
Qg(TH)
VGS = 0V to 10V
VGS = 0V to 5V
VGS = 0V to 1V
VDD = 48V,
ID = 30A,
RL = 1.6
Figures 18, 19
- 51 62 nC
- 28 34 nC
- 1.8 2.6 nC
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Thermal Resistance Junction to Case
Thermal Resistance Junction to Ambient
CISS
COSS
CRSS
RθJC
RθJA
VDS = 25V, VGS = 0V,
f = 1MHz
Figure 12
- 1350 -
pF
- 290 -
pF
- 85 - pF
- - 1.55 oC/W
- - 80 oC/W
Source to Drain Diode Specifications
PARAMETER
SYMBOL
TEST CONDITIONS
MIN TYP MAX UNITS
Source to Drain Diode Voltage (Note 2)
VSD
ISD = 30A
- - 1.5 V
Diode Reverse Recovery Time
trr ISD = 30A, dISD/dt = 100A/µs
- - 125 ns
NOTES:
2. Pulse Test: Pulse Width 300ms, Duty Cycle 2%.
3. Repetitive Rating: Pulse Width limited by max junction temperature. See Transient Thermal Impedance Curve (Figure 3) and Peak Current
Capability Curve (Figure 5).
6-261


Part Number RFP30N06LE
Description 30A/ 60V/ ESD Rated/ 0.047 Ohm/ Logic Level N-Channel Power MOSFETs
Maker Intersil Corporation
Total Page 8 Pages
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