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Intersil Electronic Components Datasheet

RFP2P10 Datasheet

-2A/ -80V and -100V/ 3.500 Ohm/ P-Channel Power MOSFETs

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RFP2P10 pdf
Semiconductor
Data Sheet
RFP2P08, RFP2P10
October 1998 File Number 2870.1
-2A, -80V and -100V, 3.500 Ohm,
P-Channel Power MOSFETs
Features
• -2A, -80V and -100V
[ /Title
(RFP2P
08,
RFP2P
10)
/Sub-
ject (-
2A, -
80V
and -
100V,
3.500
Ohm,
P-Chan-
nel
Power
MOS-
FETs)
/Author
()
/Key-
words
(Harris
Semi-
conduc-
tor,
P-Chan-
nel
Power
MOS-
FETs,
TO-
220AB)
/Cre-
ator ()
/DOCI
NFO
pdf-
These are P-Channel enhancement mode silicon gate
power field effect transistors designed for applications such
as switching regulators, switching converters. motor drivers,
relay drivers, and drivers for high power bipolar switching
transistors requiring high speed and low gate drive power.
These types can be operated directly from integrated
circuits.
Formerly developmental type TA_____.
Ordering Information
PART NUMBER
PACKAGE
BRAND
RFP2P08
TO-220AB
RFP2P08
RFP2P10
TO-220AB
RFP2P10
NOTE: When ordering, use entire part number.
• rDS(ON) = 3.500
• Related Literature
- TB334 “Guidelines for Soldering Surface Mount
Components to PC Boards
Symbol
D
G
S
Packaging
TO-220AB
DRAIN (FLANGE)
SOURCE
DRAIN
GATE
1 CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.
1-800-4-HARRIS | Copyright © Harris Corporation 1998


Intersil Electronic Components Datasheet

RFP2P10 Datasheet

-2A/ -80V and -100V/ 3.500 Ohm/ P-Channel Power MOSFETs

No Preview Available !

RFP2P10 pdf
RFP2P08, RFP2P10
RFP2P08
RFP2P10
UNITS
Drain to Source Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDSS
Drain to Gate Voltage (RGS = 20kΩ) (Note 1) . . . . . . . . . . . . . . . . . . . . . VDGR
Continuous Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ID
Pulsed Drain Current (Note 3) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IDM
Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGS
Maximum Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PD
Linear Derating Factor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . .TJ, TSTG
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . TL
Package Body for 10s, See Techbrief 334 . . . . . . . . . . . . . . . . . . . . . . . Tpkg
-80
-80
2
5
±20
25
0.2
-55 to 150
300
260
-100
-100
2
5
±20
25
0.2
-55 to 150
300
260
V
V
A
A
V
W
W/oCaaa
oC
oC
oC
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTE:
1. TJ = 25oC to 125oC.
Electrical Specifications TC = 25oC, Unless Otherwise Specified
PARAMETER
Drain to Source Breakdown Voltage
RFP2P08
SYMBOL
TEST CONDITIONS
BVDSS ID = -250µA, VGS = 0
MIN
-80
RFP2P10
Gate Threshold Voltage
Zero-Gate Voltage Drain Current
Gate to Source Leakage Current
Drain to Source On Resistance (Note 2)
Drain to Source On Voltage (Note 2)
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Thermal Resistance Junction to Case
VGS(TH)
IDSS
IGSS
rDS(ON)
VDS(ON)
td(ON)
tr
td(OFF)
tf
CISS
COSS
CRSS
RθJC
-100
VGS = VDS, ID = -250µA
VDS = Rated BVDSS, VGS = 0V
VDS = 0.8 x Rated BVDSS, VGS = 0V, TC = 125oC
VGS = ±20V, VDS = 0V
ID = -2A, VGS = -10V (Figures 6, 7)
ID = -2A, VGS = -10V
ID = 1A, VDD = -50V, RG = 50, VGS = -10V,
RL = 46.5
(Figures 10, 11, 12)
-2
-
-
-
-
-
-
-
-
-
VGS = 0V, VDS = -25V, f =1MHz
(Figure 9)
-
-
-
-
TYP MAX UNITS
-- V
-- V
- -4 V
- -1 µA
- -25 µA
- ±100 nA
- 3.500
- -7.0 V
7 25 ns
15 45
ns
14 45
ns
11 25
ns
- 150 pF
- 80 pF
- 30 pF
- 5 oC/W
Source to Drain Diode Specifications
PARAMETER
SYMBOL
TEST CONDITIONS
Source to Drain Diode Voltage (Note 2)
VSD
ISD = -1A
Diode Reverse Recovery Time
trr ISD = -2A, dISD/dt = 50A/µs
NOTES:
2. Pulse Test: Pulse width 300µs, duty cycle 2%.
3. Repetitive rating: pulse width is limited by maximum junction temperature.
MIN TYP MAX UNITS
-
- -1.4
V
- 135 -
ns
2


Part Number RFP2P10
Description -2A/ -80V and -100V/ 3.500 Ohm/ P-Channel Power MOSFETs
Maker Intersil Corporation
Total Page 5 Pages
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1 RFP2P10 -2A/ -80V and -100V/ 3.500 Ohm/ P-Channel Power MOSFETs Intersil Corporation
Intersil Corporation
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