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Intersil Electronic Components Datasheet

RFP15N15 Datasheet

15A/ 150V/ 0.150 Ohm/ N-Channel Power MOSFETs

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RFP15N15 pdf
Data Sheet
RFP15N15
October 1998 File Number 1443.2
15A, 150V, 0.150 Ohm, N-Channel Power
MOSFETs
These are N-Channel enhancement mode silicon gate
power field effect transistors designed for applications such
as switching regulators, switching converters, motor drivers,
relay drivers and drivers for high power bipolar switching
transistors requiring high speed and low gate drive power.
These types can be operated directly from integrated
circuits.
Formerly developmental type TA09195.
Ordering Information
PART NUMBER
PACKAGE
BRAND
RFP15N15
TO-220AB
RFP15N15
NOTE: When ordering, use the entire part number.
Features
• 15A, 150V
• rDS(ON) = 0.150
• Related Literature
- TB334 “Guidelines for Soldering Surface Mount
Components to PC Boards”
Symbol
D
G
S
Packaging
JEDEC TO-220AB
DRAIN
(TAB)
SOURCE
DRAIN
GATE
1 CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.
http://www.intersil.com or 407-727-9207 | Copyright © Intersil Corporation 1999


Intersil Electronic Components Datasheet

RFP15N15 Datasheet

15A/ 150V/ 0.150 Ohm/ N-Channel Power MOSFETs

No Preview Available !

RFP15N15 pdf
RFP15N15
Absolute Maximum Ratings TC = 25oC, Unless Otherwise Specified
RFP15N15
UNITS
Drain to Source Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDSS
150
V
Drain to Gate Voltage (RGS = 20k) (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .VDGR
150
V
Continuous Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ID
Pulsed Drain Current (Note 3) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IDM
15
40
A
A
Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGS
±20
V
Maximum Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PD
Linear Derating Factor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
75
0.6
W
W/oC
Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TJ, TSTG
-55 to 150
oC
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TL
Package Body for 10s, See Techbrief 334 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Tpkg
300
260
oC
oC
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTE:
1. TJ = 25oC to 125oC.
Electrical Specifications TC = 25oC, Unless Otherwise Specified
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
Drain to Source Breakdown Voltage
Gate Threshold Voltage
Zero Gate Voltage Drain Current
Gate to Source Leakage Current
Drain to Source On Resistance (Note 2)
Drain to Source On Voltage (Note 2)
Input Capacitance
Output Capacitance
Reverse-Transfer Capacitance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Thermal Resistance Junction-to-Case
BVDSS ID = 250µA, VGS = 0V
VGS(TH) VGS = VDS, ID = 250µA
IDSS
VDS = Rated BVDSS, VGS = 0V
VDS = 0.8 x Rated BVDSS, VGS = 0V, TC = 125oC
IGSS VGS = ±20V, VDS = 0V
rDS(ON) ID = 15A, VGS = 10V (Figures 6, 7)
VDS(ON) ID = 15A, VGS = 10V
CISS
COSS
VDS = 25V, VGS = 0V, f = 1MHz
(Figure 9)
CRSS
td(ON)
tr
VDD = 75V, ID 7.5A, RG = 50Ω, VGS = 10V
RL = 9.9Ω,
(Figures 10, 11, 12)
td(OFF)
tf
150
2
-
-
-
-
-
-
-
-
-
-
-
-
TYP MAX UNITS
--V
-4V
- 1 µA
25 µA
- ±100 nA
- 0.150
- 2.25 V
- 1700 pF
- 750 pF
- 350 pF
50 75
ns
150 225
ns
185 280
ns
125 190
ns
- 1.67 oC/W
Source to Drain Diode Specifications
PARAMETERS
SYMBOL
TEST CONDITIONS
Source to Drain Diode Voltage (Note 2)
VSD
ISD = 7.5A
Reverse Recovery Time
trr ISD = 4A, dISD/dt = 100A/µs
NOTES:
2. Pulse test: width 300µs, duty cycle 2%.
3. Repetitive rating: pulse width is limited by maximum junction temperature.
MIN TYP MAX UNITS
- - 1.4 V
- 200 - ns
2


Part Number RFP15N15
Description 15A/ 150V/ 0.150 Ohm/ N-Channel Power MOSFETs
Maker Intersil Corporation
Total Page 5 Pages
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