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Intersil Electronic Components Datasheet

RFP12P08 Datasheet

12A/ 80V and 100V/ 0.300 Ohm/ P-Channel Power MOSFETs

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RFP12P08 pdf
Data Sheet
RFP12P08, RFP12P10
June 1999 File Number 1495.2
12A, 80V and 100V, 0.300 Ohm, P-Channel
Power MOSFETs
The RFP12P08, and RFP12P10 are P-Channel
enhancement mode silicon gate power field effect transistors
designed for applications such as switching regulators,
switching convertors, motor drivers, relay drivers, and drivers
for high power bipolar switching transistors requiring high
speed and low gate drive power. These types can be
operated directly from integrated circuits.
Formerly developmental type TA17511.
Ordering Information
PART NUMBER
PACKAGE
BRAND
RFP12P08
TO-220AB
RFP12P08
RFP12P10
TO-220AB
RFP12P10
NOTE: When ordering, include the entire part number.
Features
• 12A, 80V and 100V
• rDS(ON) = 0.300
• SOA is Power Dissipation Limited
• Nanosecond Switching Speeds
• Linear Transfer Characteristics
• High Input Impedance
• Majority Carrier Device
• Related Literature
- TB334 “Guidelines for Soldering Surface Mount
Components to PC Boards”
Symbol
D
G
S
Packaging
DRAIN
(TAB)
TO-220AB
SOURCE
DRAIN
GATE
4-161
CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures.
http://www.intersil.com or 407-727-9207 | Copyright © Intersil Corporation 1999.


Intersil Electronic Components Datasheet

RFP12P08 Datasheet

12A/ 80V and 100V/ 0.300 Ohm/ P-Channel Power MOSFETs

No Preview Available !

RFP12P08 pdf
RFP12P08, RFP12P10
Absolute Maximum Ratings TC = 25oC, Unless Otherwise Specified
Drain to Source Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDS
Drain to Gate Voltage (RGS = 20KΩ) (Note 1). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDGR
Continuous Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
RMS Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ID
Pulsed Drain Current (Note 3) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IDM
Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGS
Maximum Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PD
Linear Derating Factor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TJ, TSTG
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TL
Package Body for 10s, See Techbrief 334 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Tpkg
RFP12P08
-80
-80
RFP12P10
-100
-100
12
30
±20
75
0.6
-55 to 150
12
30
±20
75
0.6
-55 to 150
300 300
260 260
UNITS
V
V
A
A
V
W
W/oC
oC
oC
oC
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTE:
1. TJ = 25oC to 125oC.
Electrical Specifications TC = 25oC, Unless Otherwise Specified
PARAMETER
SYMBOL
TEST CONDITIONS
Drain to Source Breakdown Voltage
RFP12P08
BVDSS ID = 250µA, VGS = 0
RFP12P10
Gate Threshold Voltage
Zero Gate Voltage Drain Current
Gate to Source Leakage Current
Drain to Source On Voltage (Note 2)
Drain to Source On Resistance (Note 2)
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Thermal Resistance, Junction to Case
VGS(TH)
IDSS
IGSS
VDS(ON)
rDS(ON)
td(ON)
tr
td(OFF)
tf
CISS
COSS
CRSS
RθJC
VGS = VDS, ID = 250µA
VDS = Rated BVDSS, VGS = 0V
VDS = 0.8 x Rated BVDSS, VGS = 0V,
TC = 125oC
VGS = ±20V, VDS = 0
ID = 12A, VGS = -10V
ID = 12A, VGS = -10V, (Figures 6, 7)
ID 12A, VDD = 50V,
RG = 50, RL = 4.1, VGS = -10V
(Figure 10)
VGS = 0V, VDS = -25V, f = 1MHz
(Figure 9)
RFP12P08, RFP12P10
Source to Drain Diode Specifications
PARAMETER
SYMBOL
TEST CONDITIONS
Source to Drain Diode Voltage (Note 2)
VSD
ISD = -12A
Diode Reverse Recovery Time
trr ISD = -12A, dISD/dt = 100A/µs
NOTES:
2. Pulse Test: Pulse Width = 300µs Max, Duty Cycle 2%
3. Repetitive rating: pulse width limited by maximum junction temperature.
MIN
-80
-100
-2
-
-
-
-
-
-
-
-
-
-
-
-
-
MIN
-
-
TYP MAX UNITS
--
V
--
V
- -4
V
- 1 µA
- 25 µA
- ±100 nA
- -3.6
V
- 0.300
18 60
ns
90 175
ns
144 275
ns
94 175
ns
- 1500 pF
- 700 pF
- 300 pF
-
1.67
oC/W
TYP MAX UNITS
- 1.4
V
200 -
ns
4-162


Part Number RFP12P08
Description 12A/ 80V and 100V/ 0.300 Ohm/ P-Channel Power MOSFETs
Maker Intersil Corporation
Total Page 5 Pages
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