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Intersil Electronic Components Datasheet

RFP12N06RLE Datasheet

12A/ 60V/ 0.135 Ohm/ N-Channel/ Logic Level/ Power MOSFETs

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RFP12N06RLE pdf
Data Sheet
RFD12N06RLE, RFD12N06RLESM,
RFP12N06RLE
July 1999
File Number 2407.4
[ /Title
(RFD1
2N06R
LE,
RFD12
N06RL
ESM,
RFP12
N06RL
E)
/Sub-
ject
(12A,
60V,
0.135
Ohm,
N-
Chan-
nel,
Logic
Level,
Power
MOS-
FETs)
/Autho
r ()
/Key-
words
(Inter-
sil
Corpo-
ration,
N-
Chan-
nel,
Logic
Level,
Power
MOS-
12A, 60V, 0.135 Ohm, N-Channel, Logic
Level, Power MOSFETs
These N-Channel logic level ESD protected power
MOSFETs are manufactured using the MegaFET process.
This process, which uses feature sizes approaching those of
LSI integrated circuits, gives optimum utilization of silicon,
resulting in outstanding performance. They were designed
for use with logic level (5V) driving sources in applications
such as programmable controllers, automotive switching,
switching regulators, switching converters, motor drivers,
relay drivers, and emitter switches for bipolar transistors.
This performance is accomplished through a special gate
oxide design which provides full rated conductance at gate
biases in the 3V to 5V range, thereby facilitating true on-off
power control directly from logic circuit supply voltages.
Formerly developmental type TA09861.
Ordering Information
PART NUMBER
PACKAGE
BRAND
RFD12N06RLE
TO-251AA
12N6LE
RFD12N06RLESM TO-252AA
12N6LE
RFP12N06RLE
TO-220AB
12N06RLE
NOTE: When ordering, use the entire part number. Add the suffix 9A to
obtain the TO-252AA variant in tape and reel, i.e., RFD12N06RLESM9A.
Packaging
JEDEC TO-251AA
DRAIN
(FLANGE)
SOURCE
DRAIN
GATE
Features
• 12A, 60V
• rDS(ON) = 0.135
• Electrostatic Discharge Protected
• UIS Rating Curve (Single Pulse)
• Design Optimized for 5V Gate Drive
• Related Literature
- TB334 “Guidelines for Soldering Surface Mount
Components to PC Boards”
Symbol
D
G
S
JEDEC TO-252AA
GATE
SOURCE
DRAIN
(FLANGE)
JEDEC TO-220AB
DRAIN (FLANGE)
SOURCE
DRAIN
GATE
6-12
CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures.
http://www.intersil.com or 407-727-9207 | Copyright © Intersil Corporation 1999


Intersil Electronic Components Datasheet

RFP12N06RLE Datasheet

12A/ 60V/ 0.135 Ohm/ N-Channel/ Logic Level/ Power MOSFETs

No Preview Available !

RFP12N06RLE pdf
RFD12N06RLE, RFD12N06RLESM, RFP12N06RLE
Absolute Maximum Ratings TC = 25oC, Unless Otherwise Specified
RFD12N06RLE,
RFD12N06RLESM,
RFP12N06RLE
UNITS
Drain to Source Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDSS
Drain to Gate Voltage (RGS = 20kΩ) (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDGR
Continuous Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ID
Pulsed Drain Current (Note 3) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IDM
Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGS
Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .PD
Linear Derating Factor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
60
60
12
26
-5 to10
40
0.32
V
V
A
A
V
W
W/oC
Single Pulse Avalanche Energy Rating . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .EAS
Electrostatic Discharge Rating ESD, MIL-STD-883, Category B(2)
Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TJ, TSTG
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TL
Package Body for 10s, See Techbrief 334 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Tpkg
Refer to UIS SOA Curve
2
-55 to 150
300
260
kV
oC
oC
oC
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTE:
1. TJ = 25oC to 125oC.
Electrical Specifications TC = 25oC, Unless Otherwise Specified
PARAMETER
SYMBOL
TEST CONDITIONS
Drain to Source Breakdown Voltage
Gate Threshold Voltage
Zero Gate Voltage Drain Current
Gate to Source Leakage Current
Drain to Source On Resistance (Note 2)
Turn-On Time
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-Off Time
Total Gate Charge
Gate Charge at 5V
Threshold Gate Charge
Thermal Resistance Junction to Case
Thermal Resistance Junction to Ambient
BVDSS
VGS(TH)
IDSS
IGSS
rDS(ON)
t(ON)
td(ON)
tr
td(OFF)
tf
t(OFF)
Qg(TOT)
Qg(5)
Qg(TH)
RθJC
RθJA
ID = 250µA, VGS = 0V
VGS = VDS, ID = 250µA
VDS = Rated BVDSS, VGS = 0V
VDS = 0.8 x Rated BVDSS, VGS = 0V, TC = 150oC
VGS = -5 to 10V
ID = 12A, VGS = 5V (Figures 7, 8)
ID = 12A, VGS = 4V
VDD = 30V, ID 6A, RL = 5Ω, RGS = 6.25Ω,
VGS = 5V, (Figures 15, 16)
VGS = 0V to 10V
VGS = 0V to 5V
VGS = 0V to 1V
VDD = 48V, ID = 12A,
RL = 4Ω,
IG(REF) = 0.25mA
(Figures 17, 18)
TO-251AA and TO-252AA
TO-220AB
MIN
60
1
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
TYP MAX UNITS
--V
-2V
- 1 µA
- 25 µA
- ±10 µA
- 0.135
- 0.160
- 60 ns
12 -
ns
20 -
ns
24 -
ns
12 -
ns
- 60 ns
- 40 nC
- 20 nC
- 1.5 nC
- 3.125 oC/W
- 100 oC/W
- 62 oC/W
Source to Drain Diode Specifications
PARAMETER
SYMBOL
TEST CONDITIONS
Source to Drain Diode Voltage
VSD
ISD = 12A
Reverse Recovery Time
trr ISD = 12A, dISD/dt = 100A/µs
NOTES:
2. Pulse test: pulse width 300ms, duty cycle 2%.
3. Repetitive rating: pulse width is limited by maximum junction temperature.
MIN TYP MAX UNITS
- - 1.2 V
- - 200 ns
6-13


Part Number RFP12N06RLE
Description 12A/ 60V/ 0.135 Ohm/ N-Channel/ Logic Level/ Power MOSFETs
Maker Intersil Corporation
Total Page 6 Pages
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