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Intersil Electronic Components Datasheet

RFM4N40 Datasheet

4A/ 350V and 400V/ 2.000 Ohm/ N-Channel Power MOSFETs

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RFM4N40 pdf
Semiconductor
RFM4N35, RFM4N40, RFP4N35, RFP4N40
Data Sheet
October 1998 File Number 1491.3
4A, 350V and 400V, 2.000 Ohm, N-Channel
Power MOSFETs
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(()RFM4N power field effect transistors designed for applications such
/3S5u, b-
as switching regulators, switching converters, motor drivers,
jReFctM()4N relay drivers, and drivers for high power bipolar switching
/4A0u, tho transistors requiring high speed and low gate-drive power.
rR(F)P4N3
/5K, ey-
These types can be operated directly from integrated
circuits.
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Ordering Information
a(4toAr,()
PART NUMBER
PACKAGE
BRAND
3/D5O0VCI RFM4N35
TO-204AA
RFM4N35
NanFdO
RFM4N40
TO-204AA
RFM4N40
p4d0f0-V, RFP4N35
TO-220AB
RFP4N35
m2.0ar0k0
RFP4N40
TO-220AB
RFP4N40
Ohm, N- NOTE: When ordering, use the entire part number.
[Channel
P/Poawgeer- Packaging
MMoOdSe-
F/UEsTes-)
O/Auut-thor
l(i)nes
//DKeOyC- -
DRAIN
(FLANGE)
VwoIErdWs
p(Hdfa-rris
mSeamrki-
conduc-
JEDEC TO-204AA
tor, N-
Channel
GATE (PIN 1)
SOURCE (PIN 2)
Power
MOS-
FETs,
TO-
204AA,
TO-
220AB)
/Creator
()
Features
• 4A, 350V and 400V
• rDS(ON) = 2.000
• Related Literature
- TB334 “Guidelines for Soldering Surface Mount
Components to PC Boards”
Symbol
D
G
S
JEDEC TO-220AB
DRAIN
(FLANGE)
SOURCE
DRAIN
GATE
1 CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.
1-800-4-HARRIS | Copyright © Harris Corporation 1998


Intersil Electronic Components Datasheet

RFM4N40 Datasheet

4A/ 350V and 400V/ 2.000 Ohm/ N-Channel Power MOSFETs

No Preview Available !

RFM4N40 pdf
RFM4N35, RFM4N40, RFP4N35, RFP4N40
Absolute Maximum Ratings TC = 25oC Unless Otherwise Specified
RFM4N35
RFM4N40
RFP4N35
RFP4N40 UNITS
Drain to Source Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . VDS
Drain to Gate Voltage (RGS = 1MΩ) (Note 1) . . . . . . . . . . . . . . . VDGR
Continuous Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .ID
Pulsed Drain Current (Note 3) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IDM
Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGS
Maximum Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PD
Linear Derating Factor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . TJ, TSTG
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . TL
Package Body for 10s, See Techbrief 334 (for TO-220) . . . . . . . .Tpkg
350
350
4
8
±20
75
0.6
-55 to 150
300
260
400
400
4
8
±20
75
0.6
-55 to 150
300
260
350
350
4
8
±20
60
0.48
-55 to 150
300
260
400
400
4
8
±20
60
0.48
-55 to 150
300
260
V
V
A
A
V
W
W/oC
oC
oC
oC
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTE:
1. TJ = 25oC to 125oC.
Electrical Specifications TC = 25oC, Unless Otherwise Specified
PARAMETER
Drain to Source Breakdown Voltage
RFM4N40, RFP4N40
RFM4N35, RFP4N35
Gate Threshold Voltage
Zero-Gate Voltage Drain Current
Gate to Source Leakage Current
Drain to Source On Resistance (Note 2)
Drain to Source On-Voltage (Note 2)
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse-Transfer Capacitance
Thermal Resistance Junction to Case
SYMBOL
TEST CONDITIONS
BVDSS ID = 250µA, VGS = 0
VGS(TH)
IDSS
IGSS
rDS(ON)
VDS(ON)
tD(ON)
tr
tD(OFF)
tf
CISS
COSS
CRSS
RθJC
VGS = VDS , ID = 250µA (Figure 8)
VDS = Rated BVDSS
VDS = 0.8 x Rated BVDSS, TC = 125oC
VGS = ±20V, VDS = 0
ID = 4A, VGS = 10V (Figures 6, 7)
ID = 4A, VGS = 10V
VDD = 200V, ID = 2A, RG = 50
RL = 100, VGS = 10V
(Figures 10, 11, 12)
VDS = 25V,
VGS = 0V
f = 1MHz (Figure 9)
RFM4N35, RFM4N40
RFP4N35, RFP4N40
Source to Drain Diode Specifications
PARAMETER
SYMBOL
TEST CONDITIONS
Source to Drain Diode Voltage (Note 2)
VSD
ISD = 2A
Reverse Recorvery Time
trr ISD = 4A, dISD/dt = 100A/µs
NOTES:
2. Pulse Test: Pulse Width 300µs, Duty Cycle 2%.
3. Repetitive rating: pulse width limited by maximum junction temperature.
MIN TYP MAX UNITS
400 - - V
350 - - V
2 - 4V
- - 1 µA
- - 25 µA
-
-
±100
nA
- - 2.000
- - 8V
- 12 45 ns
- 42 60 ns
-
130 200
ns
- 62 100 ns
- - 750 pF
- - 150 pF
- - 100 pF
- - 1.67 oC/W
- - 2.083 oC/W
MIN TYP MAX UNITS
-
- 1.4
V
- 800 -
ns
2


Part Number RFM4N40
Description 4A/ 350V and 400V/ 2.000 Ohm/ N-Channel Power MOSFETs
Maker Intersil Corporation
Total Page 4 Pages
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