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Intersil Electronic Components Datasheet

RFM3N45 Datasheet

3A/ 450V and 500V/ 3 Ohm/ N-Channel Power MOSFETs

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RFM3N45 pdf
Semiconductor
RFM3N45, RFM3N50, RFP3N45, RFP3N50
Data Sheet
October 1998 File Number 1384.2
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3A, 450V and 500V, 3 Ohm, N-Channel
Power MOSFETs
These are N-Channel enhancement mode silicon gate
power field effect transistors designed for applications such
as switching regulators, switching converters, motor drivers,
relay drivers, and drivers for high power bipolar switching
transistors requiring high speed and low gate drive power.
These types can be operated directly from integrated
circuits.
Formerly developmental type TA17405.
Ordering Information
PART NUMBER
PACKAGE
BRAND
RFM3N45
TO-204AA
RFM3N45
RFM3N50
TO-204AA
RFM3N50
RFP3N45
TO-220AB
RFP3N45
RFP3N50
TO-220AB
RFP3N50
NOTE: When ordering, use the entire part number.
Packaging
DRAIN
(FLANGE)
JEDEC TO-204AA
GATE (PIN 1)
SOURCE (PIN 2)
Features
• 3A, 450V and 500V
• rDS(ON) = 3
• Related Literature
- TB334 “Guidelines for Soldering Surface Mount
Components to PC Boards”
Symbol
D
G
S
JEDEC TO-220AB
DRAIN (FLANGE)
SOURCE
DRAIN
GATE
1 CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.
1-800-4-HARRIS | Copyright © Harris Corporation 1998


Intersil Electronic Components Datasheet

RFM3N45 Datasheet

3A/ 450V and 500V/ 3 Ohm/ N-Channel Power MOSFETs

No Preview Available !

RFM3N45 pdf
RFM3N45, RFM3N50, RFP3N45, RFP3N50
Absolute Maximum Ratings TC = 25oC, Unless Otherwise Specified
RFM3N45
RFM3N50
RFP3N45
RFP3N50
UNITS
Drain to Source Breakdown Voltage (Note 1) . . . . . . . . . VDS
450
500
450
500 V
Drain to Gate Voltage (RGS = 20kΩ) (Note 1) . . . . . . . . VDGR
450
500
450
500 V
Continuous Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . ID
3
3
3
3A
Pulsed Drain Current (Note 3) . . . . . . . . . . . . . . . . . . . . . . IDM
5
5
5
5A
Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . VGS
±20
±20
±20
±20 V
Maximum Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . PD
Linear Derating Factor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
75
0.6
75 60 60 W
0.6
0.48
0.48
W/oC
Operating and Storage Temperature . . . . . . . . . . . . TJ, TSTG
-55 to 150
-55 to 150
-55 to 150
-55 to 150
oC
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . TL
Package Body for 10s, See Techbrief 334 . . . . . . . . . . Tpkg
300
260
300
260
300
260
300 oC
260 oC
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTE:
1. TJ = 25oC to 125oC.
Electrical Specifications TC = 25oC, Unless Otherwise Specified
PARAMETER
Drain to Source Breakdown Voltage
RFM3N45, RFP3N45
SYMBOL
TEST CONDITIONS
BVDSS ID = 250µA, VGS = 0V
MIN TYP MAX UNITS
450 - - V
RFM3N50, RFP3N50
Gate Threshold Voltage
Zero Gate Voltage Drain Current
Gate to Source Leakage Current
Drain to Source On Resistance (Note 2)
Drain to Source On Voltage (Note 2)
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Thermal Resistance, Junction to Case
RFM3N45, RFM3N50
RFP3N45, RFP3N50
500
VGS(TH)
IDSS
IGSS
rDS(ON)
VDS(ON)
td(ON)
tr
td(OFF)
tf
CISS
COSS
CRSS
RθJC
VGS = VDS, ID = 250µA, (Figure 7)
VDS = Rated BVDSS, VGS = 0V
VDS = 0.8 x Rated BVDSS, VGS = 0V, TC = 125oC
VGS = ±20V, VDS = 0V
ID = 3A, VGS = 10V, (Figures 5, 6)
ID = 3A, VGS = 10V
VDD = 250V, ID 1.5A, RG = 50, VGS = 10V
RL = 165
(Figures 10, 11, 12)
VDS = 25V, VGS = 0V, f = 1MHz
2.0
-
-
-
-
-
-
-
-
-
-
-
-
-
-
--V
- 4.0 V
- 1 µA
- 25 µA
- ±100 nA
-3
- 9.0 V
30 45
ns
40 60
ns
90 135 ns
50 75
ns
- 750 pF
- 150 pF
- 100 pF
- 1.67 oC/W
- 2.083 oC/W
Source to Drain Diode Specifications
PARAMETER
SYMBOL
TEST CONDITIONS
Source to Drain Diode Voltage (Note 2)
VSD
ISD = 1.5A
Reverse Recovery Time
trr ISD = 4A, dISD/dt = 100A/µs
NOTES:
2. Pulse test: pulse width 300µs, duty cycle 2%.
3. Repetitive rating: pulse width limited by maximum junction temperature.
MIN TYP MAX UNITS
-
- 1.4
V
- 800 -
ns
2


Part Number RFM3N45
Description 3A/ 450V and 500V/ 3 Ohm/ N-Channel Power MOSFETs
Maker Intersil Corporation
Total Page 10 Pages
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