RFM18N08, RFM18N10, RFP18N08, RFP18N10
Absolute Maximum Ratings TC = 25oC, Unless Otherwise Specified
RFM18N08 RFM18N10 RFP18N08 RFP18N10 UNITS
Drain to Source Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . VDSS
Drain to Gate Voltage (RGS = 20kΩ) (Note 1) . . . . . . . . . . . . . . VDGR
Continuous Drain Current. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ID
Pulsed Drain Current (Note 3) . . . . . . . . . . . . . . . . . . . . . . . . . . . . IDM
Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGS
Maximum Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PD
Linear Derating Factor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . TJ, TSTG
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s . . . . . . . . . . . . . . . . TL
Package Body for 10s, See Techbrief 334 . . . . . . . . . . . . . . . . Tpkg
80
80
18
45
±20
100
0.8
-55 to 150
300
260
100
100
18
45
±20
100
0.8
-55 to 150
300
260
80
80
18
45
±20
75
0.6
-55 to 150
300
260
100
100
18
45
±20
75
0.6
-55 to 150
300
260
V
V
A
A
V
W
W/oC
oC
oC
oC
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation
of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTE:
1. TJ = 25oC to 125oC.
Electrical Specifications TC = 25oC, Unless Otherwise Specified
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
Drain to Source Breakdown Voltage
RFM18N08, RFP18N08
BVDSS ID = 250µA, VGS = 0V
80
RFM18N10, RFP18N10
100
Gate Threshold Voltage
Zero Gate Voltage Drain Current
Gate to Source Leakage Current
Drain to Source On Resistance (Note 2)
Drain to Source On Voltage (Note 2)
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse-Transfer Capacitance
Thermal Resistance Junction to Case
VGS(TH) VGS = VDS, ID = 250µA, (Figure 8)
IDSS
VDS = Rated BVDSS, VGS = 0V
VDS = 0.8 x Rated BVDSS, VGS = 0V, TC = 125oC
IGSS VGS = ±20V, VDS = 0V
rDS(ON) ID = 18A, VGS = 10V, (Figures 6, 7)
VDS(ON) ID = 18A, VGS = 10V
td(ON)
tr
td(OFF)
VDD = 50V, ID ≈ 9A, RG = 50Ω, VGS = 10V,
RL = 5.5Ω
(Figures 10, 11, 12)
tf
CISS
COSS
VDS = 25V, VGS = 0V, f = 1MHz,
(Figure 9)
CRSS
RθJC RFM18N08, RFM18N10
RFP18N08, RFP18N10
2
-
-
-
-
-
-
-
-
-
-
-
-
-
-
TYP MAX UNITS
--V
--V
-4V
- 1 µA
- 25 µA
- ±100 nA
- 0.100 Ω
- 1.8 V
60 90 ns
300 450 ns
150 225 ns
150 225 ns
- 1700 pF
- 750 pF
- 300 pF
- 1.25 oC/W
- 1.67 oC/W
Source to Drain Diode Specifications
PARAMETER
SYMBOL
TEST CONDITIONS
Source to Drain Diode Voltage (Note 2)
VSD
ISD = 9A
Diode Reverse Recovery Time
trr ISD = 4A, dISD/dt = 100A/µs
NOTES:
2. Pulse test: width ≤ 300µs, duty cycle ≤ 2%.
3. Repetitive rating: pulse width is limited by maximum junction temperature.
MIN TYP MAX UNITS
- - 1.4 V
- 150 - ns
5-2
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