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Intersil Electronic Components Datasheet

G20N60C3D Datasheet

HGTG20N60C3D

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G20N60C3D pdf
Data Sheet
HGTG20N60C3D
January 2000 File Number 4494.2
45A, 600V, UFS Series N-Channel IGBT
with Anti-Parallel Hyperfast Diode
The HGTG20N60C3D is a MOS gated high voltage
switching device combining the best features of MOSFETs
and bipolar transistors. This device has the high input
impedance of a MOSFET and the low on-state conduction
loss of a bipolar transistor. The much lower on-state voltage
drop varies only moderately between 25oC and 150oC. The
IGBT used is development type TA49178. The diode used in
anti-parallel with the IGBT is the RHRP3060 (TA49063).
The IGBT is ideal for many high voltage switching
applications operating at moderate frequencies where low
conduction losses are essential, such as: AC and DC motor
controls, power supplies and drivers for solenoids, relays
and contactors.
Formerly developmental type TA49179.
Ordering Information
PART NUMBER
PACKAGE
BRAND
HGTG20N60C3D
TO-247
G20N60C3D
NOTE: When ordering, use the entire part number.
Symbol
C
Features
• 45A, 600V, TC = 25oC
• 600V Switching SOA Capability
• Typical Fall Time. . . . . . . . . . . . . . . . 108ns at TJ = 150oC
• Short Circuit Rating
• Low Conduction Loss
• Hyperfast Anti-Parallel Diode
Packaging
JEDEC STYLE TO-247
E
C
G
G
E
INTERSIL CORPORATION IGBT PRODUCT IS COVERED BY ONE OR MORE OF THE FOLLOWING U.S. PATENTS
4,364,073
4,598,461
4,682,195
4,803,533
4,888,627
4,417,385
4,605,948
4,684,413
4,809,045
4,890,143
4,430,792
4,620,211
4,694,313
4,809,047
4,901,127
4,443,931
4,631,564
4,717,679
4,810,665
4,904,609
4,466,176
4,639,754
4,743,952
4,823,176
4,933,740
4,516,143
4,639,762
4,783,690
4,837,606
4,963,951
4,532,534
4,641,162
4,794,432
4,860,080
4,969,027
4,587,713
4,644,637
4,801,986
4,883,767
1 CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures.
1-888-INTERSIL or 321-724-7143 | Copyright © Intersil Corporation 2000



Intersil Electronic Components Datasheet

G20N60C3D Datasheet

HGTG20N60C3D

No Preview Available !

G20N60C3D pdf
HGTG20N60C3D
Absolute Maximum Ratings TC = 25oC, Unless Otherwise Specified
Collector to Emitter Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .BVCES
Collector Current Continuous
At TC = 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IC25
At TC = 110oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IC110
Collector Current Pulsed (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ICM
Gate to Emitter Voltage Continuous. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGES
Gate to Emitter Voltage Pulsed . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGEM
Switching Safe Operating Area at TJ = 150oC (Figure 2) . . . . . . . . . . . . . . . . . . . . . . . SSOA
Power Dissipation Total at TC = 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PD
Power Dissipation Derating TC > 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating and Storage Junction Temperature Range . . . . . . . . . . . . . . . . . . . . . . . . TJ, TSTG
Maximum Lead Temperature for Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TL
Short Circuit Withstand Time (Note 2) at VGE = 12V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . .tSC
Short Circuit Withstand Time (Note 2) at VGE = 10V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . .tSC
HGTG20N60C3D
600
45
20
300
±20
±30
20A at 600V
164
1.32
-55 to 150
260
4
10
UNITS
V
A
A
A
V
V
W
W/oC
oC
oC
µs
µs
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTES:
1. Pulse width limited by maximum junction temperature.
2. VCE(PK) = 360V, TJ = 125oC, RG = 10Ω.
Electrical Specifications TC = 25oC, Unless Otherwise Specified
PARAMETER
SYMBOL
TEST CONDITIONS
Collector to Emitter Breakdown Voltage
Collector to Emitter Leakage Current
Collector to Emitter Saturation Voltage
Gate to Emitter Threshold Voltage
Gate to Emitter Leakage Current
Switching SOA
BVCES
ICES
VCE(SAT)
VGE(TH)
IGES
SSOA
IC = 250µA, VGE = 0V
VCE = BVCES
TC = 25oC
TC = 150oC
IC = IC110
VGE = 15V
TC = 25oC
TC = 150oC
IC = 250µA, VCE = VGE
VGE = ±20V
TJ = 150oC, RG =
10Ω, VGE = 15V,
L = 100µH
VCE = 480V
VCE = 600V
Gate to Emitter Plateau Voltage
On-State Gate Charge
Current Turn-On Delay Time
Current Rise Time
Current Turn-Off Delay Time
Current Fall Time
Turn-On Energy
Turn-Off Energy (Note 3)
VGEP
QG(ON)
td(ON)I
trI
td(OFF)I
tfI
EON
EOFF
ICE = IC110, VCE = 0.5 BVCES
ICE = IC110
VCE = 0.5 BVCES
VGE = 15V
VGE = 20V
IGBT and Diode at TJ = 25oC
ICE = IC110
VCE = 0.8 BVCES
VGE = 15V
RG = 10
L = 1mH
Test Circuit (Figure 19)
MIN TYP MAX UNITS
600 - - V
- - 250 µA
- - 5.0 mA
- 1.4 1.8
V
- 1.5 1.9
V
3.4 4.8
6.3
V
-
-
±250
nA
120 - - A
20 - - A
- 8.4
-
V
- 91 110 nC
- 122 145 nC
- 28 32 ns
- 24 28 ns
- 151 210 ns
- 55 98 ns
- 500 550 µJ
- 500 700 µJ
2



Intersil Electronic Components Datasheet

G20N60C3D Datasheet

HGTG20N60C3D

No Preview Available !

G20N60C3D pdf
HGTG20N60C3D
Electrical Specifications TC = 25oC, Unless Otherwise Specified (Continued)
PARAMETER
Current Turn-On Delay Time
Current Rise Time
Current Turn-Off Delay Time
Current Fall Time
Turn-On Energy
Turn-Off Energy (Note 3)
Diode Forward Voltage
Diode Reverse Recovery Time
Thermal Resistance Junction To Case
SYMBOL
td(ON)I
trI
td(OFF)I
tfI
EON
EOFF
VEC
trr
RθJC
TEST CONDITIONS
IGBT and Diode at TJ = 150oC
ICE = IC110
VCE = 0.8 BVCES
VGE = 15V
RG = 10
L = 1mH
Test Circuit (Figure 19)
IEC = 20A
IEC = 20A, dIEC/dt = 200A/µs
IEC = 2A, dIEC/dt = 200A/µs
IGBT
Diode
MIN TYP MAX UNITS
- 28 32 ns
- 24 28 ns
- 280 450 ns
- 108 210 ns
- 1.0 1.1 mJ
- 1.2 1.7 mJ
- 1.5 1.9
V
- - 55 ns
- 32 47 ns
-
-
0.76
oC/W
- - 1.2 oC/W
NOTES:
3. Turn-Off Energy Loss (EOFF) is defined as the integral of the instantaneous power loss starting at the trailing edge of the input pulse and ending
at the point where the collector current equals zero (ICE = 0A). All devices were tested per JEDEC Standard No. 24-1 Method for Measurement
of Power Device Turn-Off Switching Loss. This test method produces the true total Turn-Off Energy Loss.
Typical Performance Curves Unless Otherwise Specified
50
VGE = 15V
40
30
20
10
0
25 50 75 100 125
TC, CASE TEMPERATURE (oC)
FIGURE 1. DC COLLECTOR CURRENT vs CASE
TEMPERATURE
150
140
TJ = 150oC, RG = 10, VGE = 15V, L = 100µH
120
100
80
60
40
20
0
0 100 200 300 400 500 600 700
VCE, COLLECTOR TO EMITTER VOLTAGE (V)
FIGURE 2. MINIMUM SWITCHING SAFE OPERATING AREA
3




Part Number G20N60C3D
Description HGTG20N60C3D
Maker Intersil Corporation
Total Page 7 Pages
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