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International Rectifier Electronic Components Datasheet

U3303 Datasheet

Power MOSFET(Vdss=30V/ Rds(on)=0.031ohm/ Id=33A)

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U3303 pdf
l Ultra Low On-Resistance
l Surface Mount (IRFR3303)
l Straight Lead (IRFU3033)
l Advanced Process Technology
l Fast Switching
l Fully Avalanche Rated
G
Description
Fifth Generation HEXFETs from International Rectifier
utilize advanced processing techniques to achieve
extremely low on-resistance per silicon area. This benefit,
combined with the fast switching speed and ruggedized
device design that HEXFET Power MOSFETs are well
known for, provides the designer with an extremely efficient
and reliable device for use in a wide variety of applications.
The D-Pak is designed for surface mounting using vapor
phase, infrared, or wave soldering techniques. The straight
lead version (IRFU series) is for through-hole mounting
applications. Power dissipation levels up to 1.5 watts are
possible in typical surface mount applications.
Absolute Maximum Ratings
ID @ TC = 25°C
ID @ TC = 100°C
IDM
PD @TC = 25°C
VGS
EAS
IAR
EAR
dv/dt
TJ
TSTG
Parameter
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current 
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy‚
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt ƒ
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Thermal Resistance
RθJC
RθJA
RθJA
Parameter
Junction-to-Case
Junction-to-Ambient (PCB mount)**
Junction-to-Ambient
PD - 9.1642A
IRFR/U3303
HEXFET® Power MOSFET
D
VDSS = 30V
RDS(on) = 0.031
ID = 33A…
S
D-Pak
TO -252A A
I-Pak
TO -2 5 1 AA
Max.
33…
21…
120
57
0.45
± 20
95
18
5.7
5.0
-55 to + 150
300 (1.6mm from case )
Units
A
W
W/°C
V
mJ
A
mJ
V/ns
°C
Typ.
–––
–––
–––
Max.
2.2
50
110
Units
°C/W
8/25/97


International Rectifier Electronic Components Datasheet

U3303 Datasheet

Power MOSFET(Vdss=30V/ Rds(on)=0.031ohm/ Id=33A)

No Preview Available !

U3303 pdf
IRFR/U3303
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
V(BR)DSS
V(BR)DSS/TJ
RDS(on)
VGS(th)
gfs
Parameter
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Forward Transconductance
IDSS Drain-to-Source Leakage Current
IGSS
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
LD Internal Drain Inductance
LS
Ciss
Coss
Crss
Internal Source Inductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Min. Typ. Max.
30 ––– –––
––– 0.032 –––
––– ––– 0.031
2.0 ––– 4.0
9.3 ––– –––
––– ––– 25
––– ––– 250
––– ––– 100
––– ––– -100
––– ––– 29
––– ––– 7.3
––– ––– 13
––– 11 –––
––– 99 –––
––– 16 –––
––– 28 –––
––– 4.5 –––
––– 7.5 –––
––– 750 –––
––– 400 –––
––– 140 –––
Units
V
V/°C
V
S
µA
nA
nC
ns
nH
pF
Conditions
VGS = 0V, ID = 250µA
Reference to 25°C, ID = 1mA
VGS = 10V, ID = 18A „
VDS = VGS, ID = 250µA
VDS = 25V, ID = 18A
VDS = 30V, VGS = 0V
VDS = 24V, VGS = 0V, TJ = 150°C
VGS = 20V
VGS = -20V
ID = 18A
VDS = 24V
VGS = 10V, See Fig. 6 and 13 „
VDD = 15V
ID = 18A
RG = 13
RD = 0.8Ω, See Fig. 10 „
Between lead,
D
6mm (0.25in.)
from package
G
and center of die contact†
VGS = 0V
VDS = 25V
ƒ = 1.0MHz, See Fig. 5
S
Source-Drain Ratings and Characteristics
Parameter
IS Continuous Source Current
(Body Diode)
ISM Pulsed Source Current
(Body Diode) 
VSD Diode Forward Voltage
trr Reverse Recovery Time
Qrr Reverse RecoveryCharge
ton Forward Turn-On Time
Min. Typ. Max. Units
Conditions
MOSFET symbol
D
––– ––– 33… A showing the
integral reverse
G
––– ––– 120
p-n junction diode.
S
––– ––– 1.3 V TJ = 25°C, IS = 18A, VGS = 0V „
––– 53 80 ns TJ = 25°C, IF = 18A
––– 94 140 nC di/dt = 100A/µs „
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Notes:
 Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 11 )
‚ Starting TJ = 25°C, L = 590µH
RG = 25, IAS = 18A. (See Figure 12)
ƒ ISD 18A, di/dt 140A/µs, VDD V(BR)DSS,
TJ 150°C
„ Pulse width 300µs; duty cycle 2%.
… Caculated continuous current based on maximum allowable junction
temperature; Package limitation current = 20A.
† This is applied for I-PAK, LS of D-PAK is measured between
lead and center of die contact
** When mounted on 1" square PCB (FR-4 or G-10 Material ) .
For recommended footprint and soldering techniques refer to application note #AN-994


Part Number U3303
Description Power MOSFET(Vdss=30V/ Rds(on)=0.031ohm/ Id=33A)
Maker International Rectifier
Total Page 10 Pages
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