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International Rectifier Electronic Components Datasheet

IRGSL6B60K Datasheet

INSULATED GATE BIPOLAR TRANSISTOR

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IRGSL6B60K pdf
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INSULATED GATE BIPOLAR TRANSISTOR
Features
• Low VCE (on) Non Punch Through IGBT Technology.
• 10µs Short Circuit Capability.
• Square RBSOA.
• Positive VCE (on) Temperature Coefficient.
Benefits
• Benchmark Efficiency for Motor Control.
• Rugged Transient Performance.
• Low EMI.
• Excellent Current Sharing in Parallel Operation.
C
G
E
n-channel
PD - 94575A
IRGB6B60K
IRGS6B60K
IRGSL6B60K
VCES = 600V
IC = 7.0A, TC=100°C
tsc > 10µs, TJ=150°C
VCE(on) typ. = 1.8V
Absolute Maximum Ratings
VCES
IC @ TC = 25°C
IC @ TC = 100°C
ICM
ILM
VGE
PD @ TC = 25°C
PD @ TC = 100°C
TJ
TSTG
Parameter
Collector-to-Emitter Voltage
Continuous Collector Current
Continuous Collector Current
Pulsed Collector Current
Clamped Inductive Load Current 
Gate-to-Emitter Voltage
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 sec.
TO-220AB
IRGB6B60K
D2Pak
IRGS6B60K
TO-262
IRGSL6B60K
Max.
600
13
7.0
26
26
± 20
90
36
-55 to +150
300 (0.063 in. (1.6mm) from case)
Units
V
A
V
W
°C
Thermal Resistance
RθJC
RθCS
RθJA
RθJA
Wt
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Parameter
Junction-to-Case - IGBT
Case-to-Sink, flat, greased surface
Junction-to-Ambient, typical socket mount‚
Junction-to-Ambient (PCB Mount, steady state)ƒ
Weight
Min.
–––
–––
–––
–––
–––
Typ.
–––
0.50
–––
–––
1.44
Max.
1.4
–––
62
40
–––
Units
°C/W
g
1
8/18/04


International Rectifier Electronic Components Datasheet

IRGSL6B60K Datasheet

INSULATED GATE BIPOLAR TRANSISTOR

No Preview Available !

IRGSL6B60K pdf
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IRG/B/S/SL6B60K
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
Ref.Fig.
V(BR)CES Collector-to-Emitter Breakdown Voltage 600 ––– ––– V VGE = 0V, IC = 500µA
V(BR)CES/TJ Temperature Coeff. of Breakdown Voltage
VCE(on)
Collector-to-Emitter Saturation Voltage
––– 0.3 ––– V/°C
1.5 1.80 2.20 V
––– 2.20 2.50
VGE = 0V, IC = 1.0mA, (25°C-150°C)
IC = 5.0A, VGE = 15V
5, 6,7
IC = 5.0A,VGE = 15V,
TJ = 150°C 8,9,10
VGE(th)
Gate Threshold Voltage
3.5 4.5 5.5 V VCE = VGE, IC = 250µA
8,9,10
VGE(th)/TJ Temperature Coeff. of Threshold Voltage ––– -10 ––– mV/°C VCE = VGE, IC = 1.0mA, (25°C-150°C) 11
gfe Forward Transconductance
––– 3.0 ––– S VCE = 50V, IC = 5.0A, PW=80µs
ICES
Zero Gate Voltage Collector Current
––– 1.0 150 µA VGE = 0V, VCE = 600V
––– 200 500
VGE = 0V, VCE = 600V, TJ = 150°C
IGES Gate-to-Emitter Leakage Current ––– ––– ±100 nA VGE = ±20V
Switching Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
Ref.Fig.
Qg
Qge
Qgc
Eon
Eoff
Etot
td(on)
tr
td(off)
tf
Eon
Eoff
Etot
td(on)
tr
td(off)
tf
Cies
Coes
Cres
RBSOA
SCSOA
Total Gate Charge (turn-on)
Gate - Emitter Charge (turn-on)
Gate - Collector Charge (turn-on)
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Reverse Bias Safe Operting Area
Short Circuit Safe Operting Area
––– 18.2 –––
IC = 5.0A
17
––– 1.9 ––– nC VCC = 400V
CT1
––– 9.2 –––
VGE = 15V
––– 110 210 µJ IC = 5.0A, VCC = 400V
CT4
––– 135 245
VGE = 15V,RG = 100Ω, L =1.4mH
––– 245 455
Ls = 150nH
TJ = 25°C „
––– 25 34
IC = 5.0A, VCC = 400V
CT4
––– 17 26
VGE = 15V, RG = 100L =1.4mH
––– 215 230 ns Ls = 150nH, TJ = 25°C
––– 13.2 22
––– 150 260
IC = 5.0A, VCC = 400V
CT4
––– 190 300 µJ VGE = 15V,RG = 100Ω, L =1.4mH
12,14
––– 340 560
Ls = 150nH
TJ = 150°C „ WF1WF2
––– 28 37
IC = 5.0A, VCC = 400V
13, 15
––– 17 26
VGE = 15V, RG = 100L =1.4mH
CT4
––– 240 255 ns Ls = 150nH, TJ = 150°C
WF1
––– 18 27
WF2
––– 290 –––
VGE = 0V
––– 34 ––– pF VCC = 30V
16
––– 10 –––
f = 1.0MHz
FULL SQUARE
TJ = 150°C, IC = 26A, Vp =600V
4
VCC = 500V, VGE =+15V to 0V,RG = 100CT2
10
––– –––
µs
TJ = 150°C, Vp =600V, RG = 100
VCC = 360V, VGE = +15V to 0V
CT3
WF3
Note  to „ are on page 13
2
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Part Number IRGSL6B60K
Description INSULATED GATE BIPOLAR TRANSISTOR
Maker International Rectifier
Total Page 13 Pages
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