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International Rectifier Electronic Components Datasheet

IRG4BC10SD-SPBF Datasheet

INSULATED GATE BIPOLAR TRANSISTOR

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IRG4BC10SD-SPBF pdf
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PD - 95780
IRG4BC10SD-SPbF
IRG4BC10SD-LPbF
INSULATED GATE BIPOLAR TRANSISTOR WITH
ULTRAFAST SOFT RECOVERY DIODE
Features
• Extremely low voltage drop 1.1Vtyp. @ 2A
• S-Series: Minimizes power dissipation at up to 3
KHz PWM frequency in inverter drives, up to 4
KHz in brushless DC drives.
• Very Tight Vce(on) distribution
• IGBT co-packaged with HEXFREDTM ultrafast,
ultra-soft-recovery anti-parallel diodes for use
in bridge configurations
• Industry standard D2Pak & TO-262 packages
• Lead-Free
C
G
E
n-channel
Standard Speed
CoPack IGBT
VCES = 600V
VCE(on) typ. = 1.10V
@VGE = 15V, IC = 2.0A
Benefits
• Generation 4 IGBT's offer highest efficiencies
available
• IGBT's optimized for specific application conditions
• HEXFRED diodes optimized for performance with
IGBT's . Minimized recovery characteristics require
less/no snubbing
• Lower losses than MOSFET's conduction and
Diode losses
Absolute Maximum Ratings
Parameter
VCES
IC @ TC = 25°C
IC @ TC = 100°C
ICM
ILM
IF @ TC = 100°C
IFM
VGE
PD @ TC = 25°C
PD @ TC = 100°C
TJ
TSTG
Collector-to-Emitter Voltage
Continuous Collector Current
Continuous Collector Current
Pulsed Collector Current 
Clamped Inductive Load Current ‚
Diode Continuous Forward Current
Diode Maximum Forward Current
Gate-to-Emitter Voltage
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 sec.
D2Pak
IRG4BC10SD-S
TO-262
IRG4BC10SD-L
Max.
600
14
8.0
18
18
4.0
18
± 20
38
15
-55 to +150
300 (0.063 in. (1.6mm) from case)
Units
V
A
V
W
°C
Thermal Resistance
RθJC
RθJC
RθCS
RθJA
RθJA
Wt
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Parameter
Min.
Junction-to-Case - IGBT
–––
Junction-to-Case - Diode
–––
Case-to-Sink, flat, greased surface
–––
Junction-to-Ambient, typical socket mount …
–––
Junction-to-Ambient (PCB Mount, steady state)† –––
Weight
–––
Typ.
–––
–––
0.50
–––
–––
2.0(0.07)
Max.
3.3
7.0
–––
80
40
–––
Units
°C/W
g (oz)
1
08/27/04


International Rectifier Electronic Components Datasheet

IRG4BC10SD-SPBF Datasheet

INSULATED GATE BIPOLAR TRANSISTOR

No Preview Available !

IRG4BC10SD-SPBF pdf
www.DataSheet4U.com
IRG4BC10SD-S/LPbF
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
V(BR)CES
V(BR)CES/TJ
VCE(on)
VGE(th)
VGE(th)/TJ
gfe
ICES
VFM
IGES
Parameter
Collector-to-Emitter Breakdown Voltageƒ
Temperature Coeff. of Breakdown Voltage
Collector-to-Emitter Saturation Voltage
Gate Threshold Voltage
Temperature Coeff. of Threshold Voltage
Forward Transconductance„
Zero Gate Voltage Collector Current
Diode Forward Voltage Drop
Gate-to-Emitter Leakage Current
Min.
600
3.0
3.65
Typ. Max. Units
—— V
0.64 — V/°C
1.58 1.8
2.05 — V
1.68 —
— 6.0
-9.5 — mV/°C
5.48 — S
— 250 µA
— 1000
1.5 1.8 V
1.4 1.7
— ±100 nA
Conditions
VGE = 0V, IC = 250µA
VGE = 0V, IC = 1.0mA
IC = 8.0A
IC = 14.0A
VGE = 15V
See Fig. 2, 5
IC = 8.0A, TJ = 150°C
VCE = VGE, IC = 250µA
VCE = VGE, IC = 250µA
VCE = 100V, IC =8.0A
VGE = 0V, VCE = 600V
VGE = 0V, VCE = 600V, TJ = 150°C
IC =4.0A
See Fig. 13
IC =4.0A, TJ = 150°C
VGE = ±20V
Switching Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
Qg
Qge
Qgc
td(on)
tr
td(off)
tf
Eon
Eoff
Ets
Ets
td(on)
tr
td(off)
tf
Ets
LE
Cies
Coes
Cres
trr
Total Gate Charge (turn-on)
Gate - Emitter Charge (turn-on)
Gate - Collector Charge (turn-on)
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Total Switching Loss
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Switching Loss
Internal Emitter Inductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Diode Reverse Recovery Time
Irr Diode Peak Reverse Recovery Current
Qrr Diode Reverse Recovery Charge
di(rec)M/dt
Diode Peak Rate of Fall of Recovery
During tb
Details of note  through „ are on the last page
2
— 15 22
IC = 8.0A
— 2.42 3.6 nC VCC = 400V
See Fig. 8
— 6.53 9.8
VGE = 15V
— 76 —
TJ = 25°C
— 32 — ns IC = 8.0A, VCC = 480V
— 815 1200
VGE = 15V, RG = 100
— 720 1080
Energy losses include "tail" and
— 0.31 —
diode reverse recovery.
— 3.28 — mJ See Fig. 9, 10, 18
— 3.60 10.9
— 1.46 2.6 mJ IC = 5.0A
— 70 —
TJ = 150°C, See Fig. 10,11, 18
— 36 —
— 890 —
ns IC = 8.0A, VCC = 480V
VGE = 15V, RG = 100
— 890 —
Energy losses include "tail" and
— 3.83 — mJ diode reverse recovery.
— 7.5 — nH Measured 5mm from package
— 280 —
VGE = 0V
— 30 — pF VCC = 30V
See Fig. 7
— 4.0 —
ƒ = 1.0MHz
— 28 42 ns TJ = 25°C See Fig.
— 38 57
TJ = 125°C 14
IF =4.0A
— 2.9 5.2 A TJ = 25°C See Fig.
— 3.7 6.7
TJ = 125°C 15
VR = 200V
— 40 60 nC TJ = 25°C See Fig.
— 70 105
TJ = 125°C
16 di/dt = 200A/µs
— 280 — A/µs TJ = 25°C See Fig.
— 235 —
TJ = 125°C 17
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Part Number IRG4BC10SD-SPBF
Description INSULATED GATE BIPOLAR TRANSISTOR
Maker International Rectifier
Total Page 12 Pages
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