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Infineon Technologies Electronic Components Datasheet

G20N60HS Datasheet

High Speed IGBT

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G20N60HS pdf
SGP20N60HS
SGW20N60HS
High Speed IGBT in NPT-technology
30% lower Eoff compared to previous generation
Short circuit withstand time – 10 µs
Designed for operation above 30 kHz
NPT-Technology for 600V applications offers:
- parallel switching capability
- moderate Eoff increase with temperature
- very tight parameter distribution
PG-TO-220-3-1
High ruggedness, temperature stable behaviour
Pb-free lead plating; RoHS compliant
Qualified according to JEDEC1 for target applications
Complete product spectrum and PSpice Models : http://www.infineon.com/igbt/
C
G
E
PG-TO-247-3
Type
VCE
IC
Eoff
Tj
Marking
Package
SGP20N60HS 600V 20 240µJ 150°C G20N60HS PG-TO-220-3-1
SGW20N60HS 600V 20 240µJ 150°C G20N60HS PG-TO-247-3
Maximum Ratings
Parameter
Symbol
Value
Collector-emitter voltage
DC collector current
TC = 25°C
TC = 100°C
Pulsed collector current, tp limited by Tjmax
Turn off safe operating area
VCE 600V, Tj 150°C
Avalanche energy single pulse
IC = 20A, VCC=50V, RGE=25
start TJ=25°C
Gate-emitter voltage static
transient (tp<1µs, D<0.05)
Short circuit withstand time2)
VGE = 15V, VCC 600V, Tj 150°C
Power dissipation
TC = 25°C
Operating junction and storage temperature
Time limited operating junction temperature for t < 150h
Soldering temperature, 1.6mm (0.063 in.) from case for 10s
VCE
IC
ICpuls
-
EAS
VGE
tSC
Ptot
Tj ,
Tstg
Tj(tl)
-
600
36
20
80
80
115
±20
±30
10
178
-55...+150
175
260
Unit
V
A
mJ
V
µs
W
°C
1 J-STD-020 and JESD-022
2) Allowed number of short circuits: <1000; time between short circuits: >1s.
Power Semiconductors
1
Rev 2.5 Nov 09
Free Datasheet http://www.Datasheet4U.com


Infineon Technologies Electronic Components Datasheet

G20N60HS Datasheet

High Speed IGBT

No Preview Available !

G20N60HS pdf
Thermal Resistance
Parameter
Characteristic
IGBT thermal resistance,
junction – case
Thermal resistance,
junction – ambient
SGP20N60HS
SGW20N60HS
Symbol
Conditions
RthJC
RthJA
PG-TO-220-3-1
PG-TO-247-3-21
Max. Value
0.7
62
40
Unit
K/W
Electrical Characteristic, at Tj = 25 °C, unless otherwise specified
Parameter
Symbol
Conditions
Static Characteristic
Collector-emitter breakdown voltage
Collector-emitter saturation voltage
Gate-emitter threshold voltage
Zero gate voltage collector current
Gate-emitter leakage current
Transconductance
V(BR)CES
VCE(sat)
VGE(th)
ICES
IGES
gfs
VGE=0V, IC=500µA
VGE = 15V, IC=20A
Tj=25°C
Tj=150°C
IC=500µA,VCE=VGE
VCE=600V,VGE=0V
Tj=25°C
Tj=150°C
VCE=0V,VGE=20V
VCE=20V, IC=20A
min.
600
3
-
-
-
-
Value
Typ.
-
2.8
3.5
4
-
-
-
14
Unit
max.
-V
3.15
4.00
5
40
2500
100
µA
nA
S
Dynamic Characteristic
Input capacitance
Output capacitance
Reverse transfer capacitance
Gate charge
Ciss
Coss
Crss
QGate
Internal emitter inductance
measured 5mm (0.197 in.) from case
Short circuit collector current1)
LE
IC(SC)
VCE=25V,
VGE=0V,
f=1MHz
VCC=480V, IC=20A
VGE=15V
PG-TO-220-3-1
PG-TO-247-3-21
VGE=15V,tSC10µs
VCC 600V,
Tj 150°C
-
-
-
-
-
-
1100
105
64
100
7
13
170
pF
nC
nH
A
1) Allowed number of short circuits: <1000; time between short circuits: >1s.
Power Semiconductors
2
Rev 2.5 Nov 09
Free Datasheet http://www.Datasheet4U.com


Part Number G20N60HS
Description High Speed IGBT
Maker Infineon
Total Page 12 Pages
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