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Infineon Technologies Electronic Components Datasheet

G15N60 Datasheet

Fast IGBT

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G15N60 pdf
SGP15N60
SGW15N60
Fast IGBT in NPT-technology
75% lower Eoff compared to previous generation
combined with low conduction losses
Short circuit withstand time – 10 µs
Designed for:
- Motor controls
- Inverter
NPT-Technology for 600V applications offers:
www.DataSheet4U.com- very tight parameter distribution
- high ruggedness, temperature stable behaviour
- parallel switching capability
PG-TO-220-3-1
Qualified according to JEDEC1 for target applications
Pb-free lead plating; RoHS compliant
Complete product spectrum and PSpice Models : http://www.infineon.com/igbt/
C
G
E
PG-TO-247-3-21
Type
SGP15N60
SGW15N60
VCE IC VCE(sat) Tj Marking Package
600V 15A
2.3V
150°C G15N60 PG-TO-220-3-1
600V 15A
2.3V
150°C G15N60 PG-TO-247-3-21
Maximum Ratings
Parameter
Collector-emitter voltage
DC collector current
TC = 25°C
TC = 100°C
Pulsed collector current, tp limited by Tjmax
Turn off safe operating area
VCE 600V, Tj 150°C
Gate-emitter voltage
Avalanche energy, single pulse
IC = 15 A, VCC = 50 V, RGE = 25 ,
start at Tj = 25°C
Short circuit withstand time2
VGE = 15V, VCC 600V, Tj 150°C
Power dissipation
TC = 25°C
Operating junction and storage temperature
Soldering temperature,
wavesoldering, 1.6mm (0.063 in.) from case for 10s
Symbol
VCE
IC
ICpuls
-
VGE
EAS
tSC
Ptot
Tj , Tstg
Ts
Value
600
31
15
62
62
±20
85
Unit
V
A
V
mJ
10
139
-55...+150
260
µs
W
°C
1 J-STD-020 and JESD-022
2 Allowed number of short circuits: <1000; time between short circuits: >1s.
1
Rev. 2.1 June 06


Infineon Technologies Electronic Components Datasheet

G15N60 Datasheet

Fast IGBT

No Preview Available !

G15N60 pdf
SGP15N60
SGW15N60
Thermal Resistance
Parameter
Characteristic
IGBT thermal resistance,
junction – case
Thermal resistance,
junction – ambient
Symbol
Conditions
RthJC
RthJA
PG-TO-220-3-1
PG-TO-247-3-21
www.DataSheet4U.com
Electrical Characteristic, at Tj = 25 °C, unless otherwise specified
Parameter
Symbol
Conditions
Static Characteristic
Collector-emitter breakdown voltage
Collector-emitter saturation voltage
Gate-emitter threshold voltage
Zero gate voltage collector current
Gate-emitter leakage current
Transconductance
Dynamic Characteristic
Input capacitance
Output capacitance
Reverse transfer capacitance
Gate charge
Internal emitter inductance
measured 5mm (0.197 in.) from case
Short circuit collector current2)
V(BR)CES
VCE(sat)
VGE(th)
ICES
IGES
gfs
Ciss
Coss
Crss
QGate
LE
IC(SC)
VGE=0V, IC=500µA
VGE = 15V, IC=15A
Tj=25°C
Tj=150°C
IC=400µA,VCE=VGE
VCE=600V,VGE=0V
Tj=25°C
Tj=150°C
VCE=0V,VGE=20V
VCE=20V, IC=15A
VCE=25V,
VGE=0V,
f=1MHz
VCC=480V, IC=15A
VGE=15V
PG-TO-220-3-1
PG-TO-247-3-21
VGE=15V,tSC10µs
VCC 600V,
Tj 150°C
Max. Value
0.9
62
40
Unit
K/W
min.
Value
Typ.
Unit
max.
600 -
-V
1.7 2 2.4
- 2.3 2.8
345
µA
- - 40
- - 2000
- - 100 nA
3 10.9 - S
- 800 960 pF
- 84 101
- 52 62
- 76 99 nC
- 7 - nH
- 13 -
- 150 - A
2) Allowed number of short circuits: <1000; time between short circuits: >1s.
2
Rev. 2.1 June 06


Part Number G15N60
Description Fast IGBT
Maker Infineon
Total Page 11 Pages
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