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Infineon Technologies Electronic Components Datasheet

D12S60 Datasheet

SiC Schottky Diode

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D12S60 pdf
Silicon Carbide Schottky Diode
Worlds first 600V Schottky diode
Revolutionary semiconductor
material - Silicon Carbide
Switching behavior benchmark
No reverse recovery
No temperature influence on
the switching behavior
No forward recovery
SDT12S60
thinQ!SiC Schottky Diode
Product Summary
VRRM
600
Qc 30
IF 12
V
nC
A
PG-TO220-2-2.
Type
SDT12S60
Package
Ordering Code
PG-TO220-2-2. Q67040-S4470
Marking Pin 1 Pin 2
D12S60 C
A
Maximum Ratings, at Tj = 25 °C, unless otherwise specified
Parameter
Symbol
Continuous forward current, TC=100°C
RMS forward current, f=50Hz
IF
IFRMS
Surge non repetitive forward current, sine halfwave IFSM
TC=25°C, tp=10ms
Repetitive peak forward current
Tj=150°C, TC=100°C, D=0.1
Non repetitive peak forward current
tp=10µs, TC=25°C
i 2t value, TC=25°C, tp=10ms
Repetitive peak reverse voltage
IFRM
IFMAX
i2dt
VRRM
Surge peak reverse voltage
Power dissipation, TC=25°C
Operating and storage temperature
VRSM
Ptot
Tj , Tstg
Value
12
17
36
49
120
6.48
600
600
88.2
-55... +175
Unit
A
A²s
V
W
°C
Rev. 2.3
Page 1
2008-06-03
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Infineon Technologies Electronic Components Datasheet

D12S60 Datasheet

SiC Schottky Diode

No Preview Available !

D12S60 pdf
Thermal Characteristics
Parameter
Characteristics
Thermal resistance, junction - case
Thermal resistance, junction - ambient, leaded
SDT12S60
Symbol
Values
Unit
min. typ. max.
RthJC
RthJA
- - 1.7 K/W
- - 62
Electrical Characteristics, at Tj = 25 °C, unless otherwise specified
Parameter
Symbol
Values
min. typ. max.
Static Characteristics
Diode forward voltage
IF=12A, Tj=25°C
IF=12A, Tj=150°C
VF
- 1.5 1.7
- 1.7 2.1
Reverse current
VR=600V, Tj=25°C
VR=600V, Tj=150°C
IR
- 40 400
- 100 2000
Unit
V
µA
Rev. 2.3
Page 2
2008-06-03


Part Number D12S60
Description SiC Schottky Diode
Maker Infineon
Total Page 8 Pages
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