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Inchange Semiconductor
Inchange Semiconductor

BU111 Datasheet Preview

BU111 Datasheet

Silicon NPN Power Transistor

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BU111 pdf
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INCHANGE Semiconductor
isc Silicon NPN Power Transistor
isc Product Specification
BU111
DESCRIPTION
·Collector-Emitter Sustaining Voltag-
: VCEO(SUS)= 300V(Min)
·Low Collector Saturation Voltage-
: VCE(sat)= 1.5V(Max)@ IC= 2.5A
APPLICATIONS
·Designed for use in color TV receivers chopper supplies.
ABSOLUTE MAXIMUM RATINGS(Ta=25)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
500 V
VCEO
Collector-Emitter Voltage
300 V
VEBO
Emitter-Base Voltage
6V
IC Collector Current-Continuous
6A
ICM Collector Current-Peak Repetitive
8
A
IBB Base Current
Collector Power Dissipation
PC @ TC=25
TJ Junction Temperature
Tstg Storage Temperature Range
3
50
200
-65~200
A
W
isc Websitewww.iscsemi.cn
Datasheet pdf - http://www.DataSheet4U.net/



Inchange Semiconductor
Inchange Semiconductor

BU111 Datasheet Preview

BU111 Datasheet

Silicon NPN Power Transistor

No Preview Available !

BU111 pdf
www.DataSheet.co.kr
INCHANGE Semiconductor
isc Silicon NPN Power Transistor
isc Product Specification
BU111
ELECTRICAL CHARACTERISTICS
TC=25unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN TYP. MAX UNIT
VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 100mA ;IB= 0
V(BR)EBO Emitter-Base Breakdown Voltage
IE= 1mA ;IC= 0
VCE(sat) Collector-Emitter Saturation Voltage IC= 2.5A; IB= 0.5A
VBE(sat) Base-Emitter Saturation Voltage
IC= 2.5A; IB= 0.5A
ICBO Collector Cutoff Current
VCB= 400V; IE=0
IEBO Emitter Cutoff Current
VEB= 6V; IC=0
fT Current-Gain—Bandwidth Product IC= 0.5A ; VCE= 10V
200 V
6V
1.5 V
1.4 V
0.1 mA
0.1 mA
10 MHz
isc Websitewww.iscsemi.cn
2
Datasheet pdf - http://www.DataSheet4U.net/


Part Number BU111
Description Silicon NPN Power Transistor
Maker Inchange Semiconductor
Total Page 2 Pages
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