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Inchange Semiconductor
Inchange Semiconductor

2SA1535 Datasheet Preview

2SA1535 Datasheet

POWER TRANSISTOR

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2SA1535 pdf
Inchange Semiconductor
Silicon PNP Power Transistors
Product Specification
2SA1535 2SA1535A
DESCRIPTION
·With TO-220Fa package
·Complement to type 2SC3944/3944A
·Optimum for the driver-stage of a 60W
to 100W output amplifier
APPLICATIONS
·For low-frequency driver and high
power amplification
PINNING
PIN
1
2
3
DESCRIPTION
Base
Collector
Emitter
·
Absolute maximum ratings(Ta=25)
SYMBOL
PARAMETER
CONDITIONS
VCBO
Collector-base voltage
2SA1535
2SA1535A
Open emitter
VCEO
Collector-emitter voltage
2SA1535
2SA1535A
Open base
VEBO
IC
ICM
PC
Emitter-base voltage
Collector current
Collector current-peak
Collectorl power dissipation
Open collector
Ta=25
TC=25
Tj Junction temperature
Tstg Storage temperature
VALUE
-150
-180
-150
-180
-5
-1.0
-1.5
2.0
15
150
-55~150
UNIT
V
V
V
A
A
W
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Inchange Semiconductor
Inchange Semiconductor

2SA1535 Datasheet Preview

2SA1535 Datasheet

POWER TRANSISTOR

No Preview Available !

2SA1535 pdf
Inchange Semiconductor
Silicon PNP Power Transistors
Product Specification
2SA1535 2SA1535A
CHARACTERISTICS
Tj=25unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO
Collector-emitter
breakdown voltage
2SA1535 IC=-1mA; IB=0
2SA1535A IC=-0.1mA; IB=0
V(BR)EBO Emitter-base breakdown voltage
IE=-10μA; IC=0
VCEsat Collector-emitter saturation voltage IC=-0.5 A;IB=-50m A
VBEsat Base-emitter saturation voltage
IC=-0.5 A;IB=-50m A
ICBO Collector cut-off current
VCB=-150V; IE=0
hFE-1
DC current gain
IC=-150mA ; VCE=-10V
hFE-2
DC current gain
IC=-500mA ; VCE=-5V
fT Transition frequency
IC=-50mA ; VCB=-10V
COB Output capacitance
IE=0; VCB=-10V;f=1MHz
MIN TYP. MAX UNIT
-150
-180
V
-5 V
-2.0 V
-2.0 V
-10 μA
90 330
50
200 MHz
30 pF
‹ hFE-1 classifications
QRS
90-155 130-220 185-330
2


Part Number 2SA1535
Description POWER TRANSISTOR
Maker Inchange Semiconductor
Total Page 4 Pages
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