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2SA1531A Datasheet

Silicon PNP epitaxial planer type

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2SA1531A pdf
Transistor
2SA1531, 2SA1531A
Silicon PNP epitaxial planer type
For low-frequency and low-noise amplification
Complementary to 2SC3929 and 2SC3929A
s Features
q Low noise voltage NV.
q High foward current transfer ratio hFE.
q S-Mini type package, allowing downsizing of the equipment and
automatic insertion through the tape packing and the magazine
packing.
s Absolute Maximum Ratings (Ta=25˚C)
Unit: mm
0.425
2.1±0.1
1.25±0.1
0.425
1
3
2
Parameter
Symbol
Ratings
Collector to 2SA1531
base voltage 2SA1531A
VCBO
–35
–55
Collector to 2SA1531
emitter voltage 2SA1531A
VCEO
–35
–55
Emitter to base voltage
VEBO
–5
Peak collector current
ICP
–100
Collector current IC –50
Collector power dissipation PC
150
Junction temperature
Tj
150
Storage temperature
Tstg –55 ~ +150
s Electrical Characteristics (Ta=25˚C)
Unit
V
V
V
mA
mA
mW
˚C
˚C
0.2±0.1
1:Base
2:Emitter
3:Collector
EIAJ:SC–70
S–Mini Type Package
Marking symbol : F(2SA1531)
H(2SA1531A)
Parameter
Symbol
Conditions
min typ max Unit
Collector cutoff current
Collector to base
voltage
2SA1531
2SA1531A
ICBO
ICEO
VCBO
VCB = –10V, IE = 0
VCE = –10V, IB = 0
IC = –10µA, IE = 0
–100 nA
–1 µA
–35
V
–55
Collector to emitter 2SA1531
voltage
VCEO
2SA1531A
IC = –2mA, IB = 0
–35
–55
V
Emitter to base voltage
Forward current transfer ratio
Collector to emitter saturation voltage
Base to emitter voltage
Transition frequency
VEBO
hFE*1
VCE(sat)
VBE
fT
Noise voltage
NV
*1hFE1 Rank classification
IE = –10µA, IC = 0
–5
V
VCE = –5V, IC = –2mA
180 700
IC = –100mA, IB = –10mA*2
– 0.6
V
VCE = –1V, IC = –100mA*2
– 0.7 –1.0
V
VCB = –10V, IE = 2mA, f = 200MHz 80 MHz
VCE = –10V, IC = –1mA, GV = 80dB
Rg = 100k, Function = FLAT
150 mV
*2 Pulse measurement
Rank
RST
hFE 180 ~ 360 260 ~ 520 360 ~ 700
Marking 2SA1531
FR
FS
FT
Symbol 2SA1531A
HR
HS
HT
1


Panasonic Electronic Components Datasheet

2SA1531A Datasheet

Silicon PNP epitaxial planer type

No Preview Available !

2SA1531A pdf
Transistor
PC — Ta
240
200
160
120
80
40
0
0 20 40 60 80 100 120 140 160
Ambient temperature Ta (˚C)
–800
–700
IB — VBE
VCE=–5V
Ta=25˚C
–600
–500
–400
–300
–200
–100
0
0 – 0.2 – 0.4 – 0.6 – 0.8 –1.0
Base to emitter voltage VBE (V)
hFE — IC
600
VCE=–5V
500
Ta=75˚C
400
25˚C
300 –25˚C
200
100
0
– 0.1 – 0.3 –1 –3 –10 –30 –100
Collector current IC (mA)
–160
–140
–120
–100
–80
–60
–40
–20
IC — VCE
Ta=25˚C
IB=–350µA
–300µA
–250µA
–200µA
–150µA
–100µA
–50µA
0
0 –2 –4 –6 –8 –10 –12
Collector to emitter voltage VCE (V)
2SA1531, 2SA1531A
–160
–140
IC — IB
VCE=–5V
Ta=25˚C
–120
–100
–80
–60
–40
–20
0
0 – 0.1 – 0.2 – 0.3 – 0.4 – 0.5
Base current IB (mA)
–120
–100
–80
IC — VBE
25˚C
Ta=75˚C –25˚C
VCE=–5V
–60
–40
–20
0
0 – 0.4 – 0.8 –1.2 –1.6 –2.0
Base to emitter voltage VBE (V)
fT — IE
500 VCB=–5V
450 Ta=25˚C
400
350
300
250
200
150
100
50
0
0.1 0.3 1 3 10 30 100
Emitter current IE (mA)
–100
–30
–10
VCE(sat) — IC
IC/IB=10
–3
–1
– 0.3
– 0.1
– 0.03
Ta=75˚C
25˚C
–25˚C
– 0.01
– 0.1 – 0.3 –1 –3 –10 –30 –100
Collector current IC (mA)
Cob — VCB
20
IE=0
18 f=1MHz
Ta=25˚C
16
14
12
10
8
6
4
2
0
– 0.1 – 0.3 –1 –3 –10 –30 –100
Collector to base voltage VCB (V)
2


Part Number 2SA1531A
Description Silicon PNP epitaxial planer type
Maker Panasonic Semiconductor
Total Page 3 Pages
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