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Inchange Semiconductor
Inchange Semiconductor

2SA1109 Datasheet Preview

2SA1109 Datasheet

POWER TRANSISTOR

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Inchange Semiconductor
Silicon PNP Power Transistors
Product Specification
2SA1109
DESCRIPTION
·With TO-3 package
·Low collector saturation voltage
·High transition frequency
APPLICATIONS
·For audio frequency amplifier and high
power amplifier applications
PINNING(see Fig.2)
PIN DESCRIPTION
1 Base
2 Emitter
3 Collector
Fig.1 simplified outline (TO-3) and symbol
Absolute maximum ratings(Ta=)
SYMBOL
PARAMETER
VCBO
Collector-base voltage
VCEO
Collector-emitter voltage
VEBO
Emitter-base voltage
IC Collector current
ICM Collector current-peak
PC Collector power dissipation
Tj Junction temperature
Tstg Storage temperature
CONDITIONS
Open emitter
Open base
Open collector
TC=25
VALUE
-180
-180
-5
-10
-14
200
150
-65~150
UNIT
V
V
V
A
A
W



Inchange Semiconductor
Inchange Semiconductor

2SA1109 Datasheet Preview

2SA1109 Datasheet

POWER TRANSISTOR

No Preview Available !

2SA1109 pdf
Inchange Semiconductor
Silicon PNP Power Transistors
CHARACTERISTICS
Tj=25unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO Collector-emitter breakdown voltage IC=-25mA ;IB=0
VCEsat Collector-emitter saturation voltage IC=-5A ;IB=B -0.5A
VBE Base-emitter on voltage
IC=-5A;VCE=-5V
ICBO Collector cut-off current
VCB=-180V; IE=0
IEBO Emitter cut-off current
VEB=-5V; IC=0
hFE-1
DC current gain
IC=-2A ; VCE=-5V
hFE-2
DC current gain
IC=-5A ; VCE=-5V
fT Transition frequency
IC=-0.5A ; VCE=-5V
Product Specification
2SA1109
MIN TYP. MAX UNIT
-180 V
-2.0 V
-1.5 V
-0.1 mA
-0.1 mA
50 160
30
60 MHz
2


Part Number 2SA1109
Description POWER TRANSISTOR
Maker Inchange Semiconductor
Total Page 3 Pages
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