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Inchange Semiconductor
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2SA1105 Datasheet

POWER TRANSISTOR

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Inchange Semiconductor
Silicon PNP Power Transistors
Product Specification
2SA1105
DESCRIPTION
·With TO-3PN package
·High frequency
·High power dissipation
APPLICATIONS
·Audio power amplifer applications
·DC-DC converters
PINNING
PIN
1
2
3
DESCRIPTION
Base
Collector;connected to
mounting base
Emitter
Fig.1 simplified outline (TO-3PN) and symbol
Absolute maximum ratings(Ta=)
SYMBOL
PARAMETER
VCBO
Collector-base voltage
VCEO
Collector-emitter voltage
VEBO
Emitter-base voltage
IC Collector current
PC Collector power dissipation
Tj Junction temperature
Tstg Storage temperature
CONDITIONS
Open emitter
Open base
Open collector
TC=25
VALUE
-120
-120
-6
-9
90
150
-55~150
UNIT
V
V
V
A
W



Inchange Semiconductor
Inchange Semiconductor

2SA1105 Datasheet Preview

2SA1105 Datasheet

POWER TRANSISTOR

No Preview Available !

2SA1105 pdf
Inchange Semiconductor
Silicon PNP Power Transistors
CHARACTERISTICS
Tj=25unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO Collector-emitter breakdown voltage IC=-25mA ;IB=0
VCEsat Collector-emitter saturation voltage IC=-3A; IB=-0.3A
VBEsat Base-emitter saturation voltage
IC=-3A; IB=-0.3A
ICBO Collector cut-off current
VCB=-120V; IE=0
IEBO Emitter cut-off current
VEB=-6V; IC=0
hFE DC current gain
IC=-3A ; VCE=4V
fT Transition frequency
IE=1A ; VCE=-12V
Product Specification
2SA1105
MIN TYP. MAX UNIT
-120
V
-1.5 V
-1.8 V
-100 μA
-100 μA
50 180
20 MHz
2


Part Number 2SA1105
Description POWER TRANSISTOR
Maker Inchange Semiconductor
Total Page 3 Pages
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