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IXYS Corporation
IXYS Corporation

IXFN43N60 Datasheet Preview

IXFN43N60 Datasheet

HiPerFET Power MOSFET

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IXFN43N60 pdf
ADVANCE INFORMATION
HiPerFETwww.DataSheet4U.com TM
Power MOSFET
Single MOSFET Die
IXFN 43N60
IXFN 40N60
IXFK 43N60
IXFK 40N60
VDSS
ID25
600V
600V
600V
600V
43A
40A
43A
40A
RDS(on)
trr
0.13W
0.15W
0.13W
0.15W
200ns
200ns
200ns
200ns
Symbol
Test Conditions
Maximum Ratings
IXFK IXFK IXFN IXFN
43N60 40N60 43N60 40N60
VDSS
TJ = 25°C to 150°C
VDGR TJ = 25°C to 150°C
600 600 V
600 600 V
V
GS
VGSM
ID25
IDM‚
IAR
EAR
dv/dt
PD
TJ
TJM
Tstg
TL
VISOL
Md
Continuous
Transient
±20 ±20 V
±30 ±30 V
TC = 25°C
T
C
= 25°C
TC = 25°C
43 40
172 160
43 40
43 40
172 160
43 40
TC = 25°C
60 60
I
S
£
I,
DM
di/dt
£
100
A/ms,
V
DD
£
V
DSS
TJ £ 150°C, RG = 2 W
5
5
TC = 25°C
560 600
-55 ... +150
150
-55 ... +150
A
A
A
mJ
V/ns
W
°C
°C
°C
1.6 mm (0.063 in) from case for 10 s
300
N/A °C
50/60 Hz, RMS
IISOL £ 1 mA
t = 1 min
t=1s
Mounting torque
Terminal connection torque
N/A
N/A
0.9/6
N/A
2500
3000
V~
V~
1.5/13 Nm/lb.in.
1.5/13 Nm/lb.in.
Weight
10 30 g
Symbol
Test Conditions
(TJ = 25°C, unless otherwise specified)
V
DSS
VGH(th)
V = 0 V, I = 3mA
GS D
VDS = VGS, ID = 8mA
IGSS VGS= ±20 VGE = 0
IDSS VDS= 0.8 • VDSS V
VGS= 0 V
RDS(on)
VGS= 10 V, ID = 0.5 • ID25
Pulse test, t £ 300 ms,
duty cycle d £ 2 %
TJ = 25 °C
TJ = 125 °C
43N60
40N60
Characteristic Values
Min. Max.
600 V
2 4V
±200 nA
400 mA
2 mA
0.13 W
0.15 W
TO-264 AA (IXFK)
G
D
S
D (TAB)
miniBLOC, SOT-227 B (IXFN)
E153432
S
G
S
D
G = Gate
D = Drain
S = Source
TAB = Drain
Either Source terminal at miniBLOC can be used
as Main or Kelvin Source
Features
· International standard packages
· Encapsulating epoxy meets
UL94V-0, flammability classification
· miniBLOC with Aluminium nitride
isolation
· Low RDS (on) HDMOSTM process
· Rugged polysilicon gate cell structure
· Unclamped Inductive Switching (UIS)
rated
· Low package inductance
· Fast intrinsic Rectifier
Applications
· DC-DC converters
· Synchronous rectification
· Battery chargers
· Switched-mode and resonant-mode
power supplies
· DC choppers
· Temperature and lighting controls
· Low voltage relays
Advantages
· Easy to mount
· Space savings
· High power density
IXYS reserves the right to change limits, test conditions, and dimensions.
© 2000 IXYS All rights reserved
97503 A(7/97)
1-2



IXYS Corporation
IXYS Corporation

IXFN43N60 Datasheet Preview

IXFN43N60 Datasheet

HiPerFET Power MOSFET

No Preview Available !

IXFN43N60 pdf
IXFK43N60
IXFK40N60
IXFN43N60
IXFN40N60
Swywmw.bDoaltaSheetT4eUs.ctoCmonditions
(TJ = 25°C, unless otherwise specified)
Characteristic Values
Min. Typ. Max.
gfs
C
iss
Coss
C
rss
t
d(on)
tr
td(off)
tf
VDS = 10 V; ID = 0.5 • ID25, pulse test
VGS = 0 V, VDS = 25 V, f = 1 MHz
VGS = 10 V, VDS = 0.5 • VDSS, ID = 0.5 • ID25
RG = 1 (External),
TBD
TBD
TBD
TBD
TBD
TBD
TBD
TBD
S
pF
pF
pF
ns
ns
ns
ns
Q
g(on)
Qgs
Qgd
VGS = 10 V, VDS = 0.5 • VDSS, ID = 0.5 • ID25
TBD
TBD
TBD
nC
nC
nC
RthJC
RthCK
TO-264 AA
TO-264 AA
0.22 K/W
0.15 K/W
R
thJC
RthCK
miniBLOC, SOT-227 B
miniBLOC, SOT-227 B
0.21 K/W
0.05 K/W
Source-Drain Diode
(T
J
=
25°C,
unless
otherwise
specified)
Symbol
Test Conditions
IS VGS = 0
43N60
40N60
ISM Repetitive;
43N60
pulse width limited by TJM
40N60
VSD IF = 100 A, VGS = 0 V,
Pulse test, t 300 µs, duty cycle d 2 %
trr
QRM IF = 50 A, -di/dt = 100 A/µs, VR = 100 V
IRM
Notes: 1.
2.
RGS = 1 M
Pulse width limited by TJM.
Characteristic Values
Min. Typ. Max.
43 A
40 A
172 A
160 A
1.5 V
TBD
TBD
TBD
ns
µC
A
TO-264 AA Outline
Dim. Millimeter
Min. Max.
A 4.82 5.13
A1 2.54 2.89
A2 2.00 2.10
b 1.12 1.42
b1 2.39 2.69
b2 2.90 3.09
c 0.53 0.83
D 25.91 26.16
E 19.81 19.96
e 5.46 BSC
J 0.00 0.25
K 0.00 0.25
L 20.32 20.83
L1 2.29 2.59
P 3.17 3.66
Q 6.07 6.27
Q1 8.38 8.69
R 3.81 4.32
R1 1.78 2.29
S 6.04 6.30
T 1.57 1.83
Inches
Min. Max.
.190
.100
.079
.202
.114
.083
.044
.094
.114
.056
.106
.122
.021 .033
1.020 1.030
.780 .786
.215 BSC
.000 .010
.000 .010
.800
.090
.820
.102
.125 .144
.239
.330
.247
.342
.150
.070
.170
.090
.238 .248
.062 .072
miniBLOC, SOT-227 B
M4 screws (4x) supplied
Dim.
A
B
C
D
E
F
G
H
J
K
L
M
N
O
P
Q
R
S
T
U
Millimeter
Min. Max.
31.50 31.88
7.80 8.20
4.09 4.29
4.09 4.29
4.09 4.29
14.91 15.11
30.12 30.30
38.00 38.23
11.68 12.22
8.92 9.60
0.76 0.84
12.60 12.85
25.15 25.42
1.98 2.13
4.95 5.97
26.54 26.90
3.94 4.42
4.72 4.85
24.59 25.07
-0.05 0.1
Inches
Min. Max.
1.240 1.255
0.307 0.323
0.161 0.169
0.161 0.169
0.161 0.169
0.587 0.595
1.186 1.193
1.496 1.505
0.460 0.481
0.351 0.378
0.030 0.033
0.496 0.506
0.990 1.001
0.078 0.084
0.195 0.235
1.045 1.059
0.155 0.174
0.186 0.191
0.968 0.987
-0.002 0.004
© 2000 IXYS All rights reserved
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents:
4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715
4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025
2-2


Part Number IXFN43N60
Description HiPerFET Power MOSFET
Maker IXYS Corporation
Total Page 2 Pages
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