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IXYS Corporation
IXYS Corporation

IXFK48N60P Datasheet Preview

IXFK48N60P Datasheet

PolarHVTM HiPerFET Power MOSFET N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode

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IXFK48N60P pdf
PolarHVwww.DataSheet4U.cToMm HiPerFET
Power MOSFET
N-Channel Enhancement Mode
Avalanche Rated
Fast Intrinsic Diode
IXFK 48N60P
IXFX 48N60P
VDSS
ID2
RDS(on)
trr
= 600 V
= 48 A
135m
200 ns
Symbol
Test Conditions
TO-264 (IXFK)
Maximum Ratings
VDSS
VDGR
VGSS
VGSM
ID25
IDM
IAR
EAR
EAS
dv/dt
PD
TJ
TJM
Tstg
Md
Weight
TL
TSOLD
TJ = 25° C to 150° C
TJ = 25° C to 150° C; RGS = 1 M
Continuous
Transient
TC = 25° C
TC = 25° C, pulse width limited by TJM
TC = 25° C
TC = 25° C
TC = 25° C
IS IDM, di/dt 100 A/µs, VDD VDSS,
TJ 150° C, RG = 4
TC = 25° C
Mounting torque (TO-264)
TO-264
PLUS247
1.6 mm (0.062 in.) from case for 10 s
Plastic body for 10 s
600 V
600 V
±30 V
±40 V
48 A
110 A
48 A
70 mJ
2.0 J
20 V/ns
830 W
-55 ... +150
150
-55 ... +150
°C
°C
°C
1.13/10 Nm/lb.in.
10 g
6g
300 ° C
260 ° C
Symbol
Test Conditions
(TJ = 25° C, unless otherwise specified)
BVDSS
VGS = 0 V, ID = 250 µA
Characteristic Values
Min. Typ. Max.
600 V
VGS(th)
VDS = VGS, ID = 8 mA
3.0 5.0 V
IGSS VGS = ±30 VDC, VDS = 0
±200 nA
IDSS
VDS = VDSS
VGS = 0 V
TJ = 125° C
25 µA
1000 µA
RDS(on)
VGS = 10 V, ID = 0.5 ID25
Pulse test, t 300 µs, duty cycle d 2 %
135 m
G
D
S
(TAB)
PLUS247 (IXFX)
(TAB)
G = Gate D = Drain
S = Source Tab = Drain
Features
l International standard packages
l Fast recovery diode
l Unclamped Inductive Switching (UIS)
rated
l Low package inductance
- easy to drive and to protect
Advantages
l Easy to mount
l Space savings
l High power density
© 2006 IXYS All rights reserved
DS99375E(02/06)



IXYS Corporation
IXYS Corporation

IXFK48N60P Datasheet Preview

IXFK48N60P Datasheet

PolarHVTM HiPerFET Power MOSFET N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode

No Preview Available !

IXFK48N60P pdf
IXFK 48N60P IXFX 48N60P
Symbol
Test Conditions
www.DataSheet4U.com
Characteristic Values
(TJ = 25° C, unless otherwise specified)
Min. Typ. Max.
gfs
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
Qg(on)
Qgs
Qgd
RthJC
RthCs
VDS = 20 V; ID = 0.5 ID25, pulse test
VGS = 0 V, VDS = 25 V, f = 1 MHz
VGS = 10 V, VDS = 0.5 ID25
RG = 2 (External)
VGS = 10 V, VDS = 0.5 VDSS, ID = 0.5 ID25
TO-264 and PLUS247
35 53
S
8860
850
60
pF
pF
pF
30 ns
25 ns
85 ns
22 ns
150 nC
50 nC
50 nC
0.15 ° C/W
0.15
° C/W
TO-264 (IXFK) Outline
Source-Drain Diode
Symbol
Test Conditions
Characteristic Values
(TJ = 25° C, unless otherwise specified)
Min. Typ. Max.
IS VGS = 0 V
ISM Repetitive
VSD IF = IS, VGS = 0 V,
Pulse test, t 300 µs, duty cycle d2 %
48 A
110 A
1.5 V
trr IF = 25A, -di/dt = 100 A/µs
QRM
IRM
VR = 100V
200 ns
0.8 µC
6.0 A
PLUS 247TM (IXFX) Outline
Terminals:
1 - Gate
2 - Drain (Collector)
3 - Source (Emitter)
4 - Drain (Collector)
Dim. Millimeter
Min. Max.
A 4.83 5.21
A1 2.29 2.54
A2 1.91 2.16
b 1.14 1.40
b1 1.91 2.13
b2 2.92 3.12
C 0.61 0.80
D 20.80 21.34
E 15.75 16.13
e 5.45 BSC
L 19.81 20.32
L1 3.81 4.32
Q 5.59 6.20
R 4.32 4.83
Inches
Min. Max.
.190
.090
.075
.205
.100
.085
.045
.075
.115
.055
.084
.123
.024
.819
.620
.031
.840
.635
.215 BSC
.780 .800
.150 .170
.220 0.244
.170 .190
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered by 4,835,592
one or moreof the following U.S. patents: 4,850,072
4,881,106
4,931,844
5,017,508
5,034,796
5,049,961
5,063,307
5,187,117
5,237,481
5,381,025
5,486,715
6,162,665
6,259,123 B1
6,306,728 B1
6,404,065 B1
6,534,343
6,583,505
6,683,344
6,727,585
6,710,405B2 6,759,692
6,710,463
6,771,478 B2


Part Number IXFK48N60P
Description PolarHVTM HiPerFET Power MOSFET N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode
Maker IXYS Corporation
Total Page 4 Pages
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