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G2000HF450 Datasheet Preview

G2000HF450 Datasheet

Anode Shorted Gate Turn-Off Thyristor

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G2000HF450 pdf
Date:- 28 June, 2012
Data Sheet Issue:- P1
Provisional Data
Anode Shorted Gate Turn-Off Thyristor
Types G2000HF450
Absolute Maximum Ratings
VDRM
VRSM
VDC-link
VRRM
VRSM
VOLTAGE RATINGS
Repetitive peak off-state voltage, (note 1)
Non-repetitive peak off-state voltage, (note 1)
Maximum continuos DC-link voltage
Repetitive peak reverse voltage
Non-repetitive peak reverse voltage
MAXIMUM
LIMITS
4500
4500
2800
18
18
UNITS
V
V
V
V
V
ITGQ
Ls
IT(AV)M
IT(RMS)
ITSM
ITSM2
I2t
di/dtcr
PFGM
PRGM
IFGM
VRGM
Tj op
Tstg
RATINGS
Peak turn-off current, (note 2)
Snubber loop inductance, ITM=ITGQ, (note 2)
Mean on-state current, Tsink=55°C (note 3)
Nominal RMS on-state current, 25°C (note 3)
Peak non-repetitive surge current tp=10ms, (Note 4)
Peak non-repetitive surge current tp=2ms, (Note 4)
I2t capacity for fusing tp=10ms
Critical rate of rise of on-state current, (note 5)
Peak forward gate power
Peak reverse gate power
Peak forward gate current
Peak reverse gate voltage (note 6).
Operating temperature range
Storage temperature range
Notes:-
1) VGK=-2Volts.
2) Tj=125°C, VD=2800V, VDM 4500V diGQ/dt=30A/µs, ITGQ=2000A and CS=4µF.
3) Double-side cooled, single phase; 50Hz, 180° half-sinewave.
4) Tj(initial)=125°C, single phase, 180° sinewave, re-applied voltage VD=VR10V.
5) IT=2000A repetitive, IGM=25A, diGM/dt=20A/µs. For di/dt>500A/µs please consult the factory.
6) May exceed this value during turn-off avalanche period.
MAXIMUM
LIMITS
2000
200
890
1765
13.7
24.0
938×103
500
120
12
60
18
-40 to +125
-40 to +125
UNITS
A
nH
A
A
kA
kA
A2s
A/µs
W
kW
A
V
°C
°C
Data Sheet. Types G2000HF450 Issue P1
Page 1 of 5
June, 2012



IXYS
IXYS

G2000HF450 Datasheet Preview

G2000HF450 Datasheet

Anode Shorted Gate Turn-Off Thyristor

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G2000HF450 pdf
Characteristics
Anode Shorted Gate Turn-Off Thyristor types G2000HF450
VTM
IL
IH
dv/dtcr
IDRM
IRRM
IGKM
VGT
IGT
td
tgt
Eon
tf
ts
tgq
IGQM
QGQ
ttail
Eoff
RthJK
F
Wt
Parameter
Maximum peak on-state voltage
Latching current
Holding current.
Critical rate of rise of off-state
voltage
Peak off state current
Peak reverse current
Peak negative gate leakage current
Gate trigger voltage
Gate trigger current
Delay time
Turn-on time
Turn-on energy
Fall time
Storage time
Turn-off time
Peak turn-off gate current
Turn-off gate charge
Tail time
Turn-off energy
Thermal resistance junction to sink
Mounting force
Weight
MIN
-
-
-
1000
-
-
-
-
-
-
-
-
0.05
-
-
-
-
-
-
-
-
-
-
-
-
-
21
-
TYP
-
40
40
MAX TEST CONDITIONS
3.5 IG=5A, IT=2000A
- Tj=25°C
- Tj=25°C
- - VD=3000V, VGR=-2V
- 60 Rated VDRM, VGR=-2V
- 20 VRR=18V
- 20 VGR=-18V
1.0 - Tj=-40°C
0.8 1.0 Tj=25°C
VD=25V, RL=25m
0.6 - Tj=125°C
8 - Tj=-40°C
- 5 Tj=25°C VD=25V, RL=25m
- 1 Tj=125°C
1.5 3
4.0
10
VD=2800V, ITGQ=2000A, diT/dt=200A/µs,
IGM=30A, diG/dt=20A/µs, CS=4µF, Rs=5
- 1.3
2-
- 25
- 30
600
-
VDM =2800V, ITGQ=2000A, diGQ/dt=30A/µs,
VGR=-16V, CS=4µF
7-
8.5 -
-7
- 22 Double side cooled
- 48 Cathode side cooled
- 42 Anode side cooled
- 26 (see note 2)
0.8 -
Notes:-
1) Unless otherwise indicated Tj=125oC.
2) For other clamping forces, consult factory.
UNITS
V
A
A
V/µs
mA
mA
mA
V
V
V
A
A
A
µs
µs
J
µs
µs
µs
A
mC
µs
J
K/kW
K/kW
K/kW
kN
kg
Data Sheet. Types G2000HF450 Issue P1
Page 2 of 5
June, 2012


Part Number G2000HF450
Description Anode Shorted Gate Turn-Off Thyristor
Maker IXYS
Total Page 5 Pages
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