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Integrated Silicon Solution Electronic Components Datasheet

IS43TR16128BL Datasheet

2Gb DDR3 SDRAM

No Preview Available !

IS43TR16128BL pdf
IS43/46TR16128B, IS43/46TR16128BL,
IS43/46TR82560B, IS43/46TR82560BL
256Mx8, 128Mx16 2Gb DDR3 SDRAM
FEATURES
Standard Voltage: VDD and VDDQ = 1.5V ± 0.075V
Low Voltage (L): VDD and VDDQ = 1.35V + 0.1V, -0.067V
- Backward compatible to 1.5V
High speed data transfer rates with system
frequency up to 1066 MHz
8 internal banks for concurrent operation
8n-Bit pre-fetch architecture
Programmable CAS Latency
Programmable Additive Latency: 0, CL-1,CL-2
Programmable CAS WRITE latency (CWL) based
on tCK
Programmable Burst Length: 4 and 8
Programmable Burst Sequence: Sequential or
Interleave
BL switch on the fly
Auto Self Refresh(ASR)
Self Refresh Temperature(SRT)
FEBRUARY 2018
Refresh Interval:
7.8 us (8192 cycles/64 ms) Tc= -40°C to 85°C
3.9 us (8192 cycles/32 ms) Tc= 85°C to 105°C
Partial Array Self Refresh
Asynchronous RESET pin
TDQS (Termination Data Strobe) supported (x8
only)
OCD (Off-Chip Driver Impedance Adjustment)
Dynamic ODT (On-Die Termination)
Driver strength : RZQ/7, RZQ/6 (RZQ = 240 Ω)
Write Leveling
Up to 200 MHz in DLL off mode
Operating temperature:
Commercial (TC = 0°C to +95°C)
Industrial (TC = -40°C to +95°C)
Automotive, A1 (TC = -40°C to +95°C)
Automotive, A2 (TC = -40°C to +105°C)
OPTIONS
Configuration:
256Mx8
128Mx16
Package:
96-ball BGA (9mm x 13mm) for x16
78-ball BGA (8mm x 10.5mm) for x8
ADDRESS TABLE
Parameter
Row Addressing
Column Addressing
Bank Addressing
Page size
Auto Precharge
Addressing
BL switch on the fly
256Mx8
A0-A14
A0-A9
BA0-2
1KB
A10/AP
A12/BC#
SPEED BIN
Speed Option
JEDEC Speed Grade
CL-nRCD-nRP
tRCD,tRP(min)
15H
DDR3-1333H
9-9-9
13.5
125K
DDR3-1600K
11-11-11
13.75
107M
DDR3-1866M
13-13-13
13.91
093N
DDR3-2133N
14-14-14
13.09
Units
tCK
ns
Note: Faster speed options are backward compatible to slower speed options.
128Mx16
A0-A13
A0-A9
BA0-2
2KB
A10/AP
A12/BC#
Copyright © 2017 Integrated Silicon Solution, Inc. All rights reserved. ISSI reserves the right to make changes to this specification and its products at any time
without notice. ISSI assumes no liability arising out of the application or use of any information, products or services described herein. Customers are advised
to obtain the latest version of this device specification before relying on any published information and before placing orders for products.
Integrated Silicon Solution, Inc. does not recommend the use of any of its products in life support applications where the failure or malfunction of the product
can reasonably be expected to cause failure of the life support system or to significantly affect its safety or effectiveness. Products are not authorized for use
in such applications unless Integrated Silicon Solution, Inc. receives written assurance to its satisfaction, that:
a.) the risk of injury or damage has been minimized;
b.) the user assume all such risks; and
c.) potential liability of Integrated Silicon Solution, Inc is adequately protected under the circumstances
Integrated Silicon Solution, Inc. www.issi.com
Rev. G2
01/25/2018
1


Integrated Silicon Solution Electronic Components Datasheet

IS43TR16128BL Datasheet

2Gb DDR3 SDRAM

No Preview Available !

IS43TR16128BL pdf
IS43/46TR16128B, IS43/46TR16128BL,
IS43/46TR82560B, IS43/46TR82560BL
1. DDR3 PACKAGE BALLOUT
1.1 DDR3 SDRAM package ballout 78-ball BGA x8
1 23456
A
VSS
VDD
NC
B
VSS
VSSQ DQ0
C
VDDQ
DQ2
DQS
D
VSSQ
DQ6 DQS#
E VREFDQ VDDQ DQ4
F
NC1
VSS
RAS#
G
ODT
VDD CAS#
H NC CS# WE#
J VSS BA0 BA2
K
VDD
A3
A0
L
VSS
A5
A2
M
VDD
A7
A9
N VSS RESET# A13
Note:
NC balls have no internal connection. NC(A15) is one of NC pins and reserved for higher densities.
7
NU/TDQS#
DM/TDQS
DQ1
VDD
DQ7
CK
CK#
A10/AP
NC(A15)
A12/BC#
A1
A11
A14
8
VSS
VSSQ
DQ3
VSS
DQ5
VSS
VDD
ZQ
VREFCA
BA1
A4
A6
A8
9
VDD
VDDQ
VSSQ
VSSQ
VDDQ
NC
CKE
NC
VSS
VDD
VSS
VDD
VSS
Integrated Silicon Solution, Inc. www.issi.com
Rev. G2
01/25/2018
2


Part Number IS43TR16128BL
Description 2Gb DDR3 SDRAM
Maker ISSI
Total Page 30 Pages
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