http://www.www.datasheet4u.com

900,000+ Datasheet PDF Search and Download

Datasheet4U offers most rated semiconductors datasheets pdf



Hitachi Power Semiconductor Device Electronic Components Datasheet

K1316 Datasheet

2SK1316

No Preview Available !

K1316 pdf
2SK1315(L)(S), 2SK1316(L)(S)
Silicon N-Channel MOS FET
Application
High speed power switching
Features
Low on-resistance
High speed switching
Low drive current
No secondary breakdown
Suitable for switching regulator, DC-DC converter and motor driver
Outline
LDPAK
4
4
123
D
12
3
G
S
1. Gate
2. Drain
3. Source
4. Drain



Hitachi Power Semiconductor Device Electronic Components Datasheet

K1316 Datasheet

2SK1316

No Preview Available !

K1316 pdf
2SK1315(L)(S), 2SK1316(L)(S)
Absolute Maximum Ratings (Ta = 25°C)
Item
Drain to source voltage
2SK1315
2SK1316
Gate to source voltage
Drain current
Drain peak current
Body to drain diode reverse drain current
Channel dissipation
Channel temperature
Storage temperature
Notes: 1. PW 10 µs, duty cycle 1%
2. Value at TC = 25°C
Symbol
VDSS
VGSS
ID
I *1
D(pulse)
I DR
Pch*2
Tch
Tstg
Ratings
450
500
±30
8
32
8
60
150
–55 to +150
Unit
V
V
A
A
A
W
°C
°C
2



Hitachi Power Semiconductor Device Electronic Components Datasheet

K1316 Datasheet

2SK1316

No Preview Available !

K1316 pdf
2SK1315(L)(S), 2SK1316(L)(S)
Electrical Characteristics (Ta = 25°C)
Item
Symbol Min
Drain to source
breakdown voltage
2SK1315 V(BR)DSS
2SK1316
450
500
Gate to source breakdown
voltage
V(BR)GSS ±30
Gate to source leak current
I GSS
Zero gate voltage 2SK1315 IDSS
drain current
2SK1316
Gate to source cutoff voltage VGS(off)
Static Drain to source 2SK1315 RDS(on)
on state resistance 2SK1316
2.0
Forward transfer admittance |yfs|
4.5
Input capacitance
Ciss —
Output capacitance
Coss —
Reverse transfer capacitance Crss —
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Body to drain diode forward
voltage
t d(on)
tr
t d(off)
tf
VDF
Body to drain diode reverse
recovery time
t rr
Note: 1. Pulse test
Typ Max Unit
——V
——V
±10 µA
— 250 µA
0.55
0.60
7.5
1150
340
55
17
55
100
45
0.9
3.0
0.7
0.8
350 —
V
S
pF
pF
pF
ns
ns
ns
ns
V
ns
Test conditions
ID = 10 mA, VGS = 0
IG = ±100 µA, VDS = 0
VGS = ±25 V, VDS = 0
VDS = 360 V, VGS = 0
VDS = 400 V, VGS = 0
ID = 1 mA, VDS = 10 V
ID = 4 A, VGS = 10 V *1
ID = 4 A, VDS = 10 V *1
VDS = 10 V, VGS = 0,
f = 1 MHz
ID = 4 A, VGS = 10 V,
RL = 7.5
IF = 8 A, VGS = 0
IF = 8 A, VGS = 0,
diF/dt = 100 A/µs
See characteristic curves of 2SK1159, 2SK1160.
3




Part Number K1316
Description 2SK1316
Maker Hitachi Semiconductor
Total Page 6 Pages
PDF Download
K1316 pdf
Download PDF File
K1316 pdf
View for Mobile






Related Datasheet

1 K1310A N-CHANNEL MOS TYPE TRANSISTOR Toshiba Semiconductor
Toshiba Semiconductor
K1310A pdf
2 K1315 2SK1316 Hitachi Semiconductor
Hitachi Semiconductor
K1315 pdf
3 K1316 2SK1316 Hitachi Semiconductor
Hitachi Semiconductor
K1316 pdf
4 K1317 2SK1317 Hitachi Semiconductor
Hitachi Semiconductor
K1317 pdf




Part Number Start With

0    1    2    3    4    5    6    7    8    9    A    B    C    D    E    F    G    H    I    J    K    L    M    N    O    P    Q    R    S    T    U    V    W    X    Y    Z

site map

webmaste! click here

contact us

Buy Components