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Hitachi Power Semiconductor Device Electronic Components Datasheet

2SD2115S Datasheet

Silicon NPN Epitaxial Planar(Low frequency power amplifier)

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2SD2115S pdf
2SD2115(L)/(S)
Silicon NPN Epitaxial Planar
Application
Low frequency power amplifier
Outline
DPAK
4
1
2
3
S Type
4
12 3
L Type
1. Base
2. Collector
3. Emitter
4. Collector
Absolute Maximum Ratings (Ta = 25°C)
Item
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Collector current
Collector peak current
Collector power dissipation
Junction temperature
Storage temperature
Note: 1. Value at TC = 25°C.
Symbol
VCBO
VCEO
VEBO
IC
I C(peak)
PC * 1
Tj
Tstg
Rating
150
60
5
2
2.5
18
150
–55 to +150
Unit
V
V
V
A
A
W
°C
°C


Hitachi Power Semiconductor Device Electronic Components Datasheet

2SD2115S Datasheet

Silicon NPN Epitaxial Planar(Low frequency power amplifier)

No Preview Available !

2SD2115S pdf
2SD2115(L)/(S)
Electrical Characteristics (Ta = 25°C)
Item
Symbol Min
Collector to base breakdown
voltage
V(BR)CBO
150
Collector to emitter breakdown V(BR)CEO
voltage
60
Emitter to base breakdown
voltage
V(BR)EBO
5
Collector cutoff current
DC current transfer ratio
Collector to emitter saturation
voltage
I CBO
hFE
VCE(sat)
150
Base to emitter saturation
voltage
VBE(sat)
Fall time
Note: 1. Pulse test.
tf
Typ
Max Unit
—V
—V
—V
10 µA
0.8 V
1.3 V
0.6 µs
Test conditions
IC = 1 mA, IE = 0
IC = 10 mA, RBE =
IE = 1 mA, IC = 0
VCB = 100 V, IE = 0
VCE = 5 V, IC = 1.5 A*1
IC = 1.5 A, IB = 0.05 A*1
IC = 1.5 A, IB = 0.05 A*1
IC = 1.5 A, IB1 = –IB2 = 50 mA
Maximum Collector Dissipation Curve
30
20
10
0 50 100 150
Case temperature TC (°C)
Area of Safe Operation
3.0 iC(peak)
IC(max)
1.0
0.3
0.1
Ta = 25°C,
1 shot pulse
0.03
1
3
10 30
100
Collector to emitter voltage VCE (V)
2


Part Number 2SD2115S
Description Silicon NPN Epitaxial Planar(Low frequency power amplifier)
Maker Hitachi Semiconductor
Total Page 5 Pages
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