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Hitachi Power Semiconductor Device Electronic Components Datasheet

J297 Datasheet

Silicon P-Channel MOS FET

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J297 pdf
2SJ297(L), 2SJ297(S)
Silicon P-Channel MOS FET
Application
High speed power switching
Features
Low on-resistance
High speed switching
Low drive current
4 V gate drive device can be driven from 5 V source
Suitable for switching regulator, DC-DC converter
Avalanche ratings
Outline
LDPAK
4
123
D
G
S
4
12
3
1. Gate
2. Drain
3. Source
4. Drain
November 1996



Hitachi Power Semiconductor Device Electronic Components Datasheet

J297 Datasheet

Silicon P-Channel MOS FET

No Preview Available !

J297 pdf
2SJ297(L), 2SJ297(S)
Absolute Maximum Ratings (Ta = 25°C)
Item
Drain to source voltage
Gate to source voltage
Drain current
Drain peak current
Body to drain diode reverse drain current
Avalanche current
Avalanche energy
Channel dissipation
Channel temperature
Storage temperature
Notes 1. PW 10 µs, duty cycle 1%
2. Value at TC = 25°C
3. Value at Tch = 25°C, Rg 50
Symbol
VDSS
VGSS
ID
I *1
D(pulse)
IDR
IAP*3
EAR*3
Pch*2
Tch
Tstg
Ratings
–60
±20
–20
–80
–20
–20
34
60
150
–55 to +150
Unit
V
V
A
A
A
A
mJ
W
°C
°C
2



Hitachi Power Semiconductor Device Electronic Components Datasheet

J297 Datasheet

Silicon P-Channel MOS FET

No Preview Available !

J297 pdf
2SJ297(L), 2SJ297(S)
Electrical Characteristics (Ta = 25°C)
Item
Symbol Min
Drain to source breakdown
voltage
V(BR)DSS
–60
Gate to source breakdown
voltage
V(BR)GSS
±20
Gate to source leak current IGSS
Zero gate voltage drain current IDSS
Gate to source cutoff voltage VGS(off)
Static drain to source on state RDS(on)
resistance
–1.0
Forward transfer admittance
Input capacitance
|yfs|
Ciss
10
Output capacitance
Coss —
Reverse transfer capacitance Crss —
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Body to drain diode forward
voltage
td(on)
tr
td(off)
tf
VDF
Body to drain diode reverse
recovery time
trr
Note 1. Pulse test
Typ Max Unit
——V
——V
0.05
0.07
16
2200
1000
300
25
130
320
210
–1.1
±10
–250
–2.25
0.065
0.095
µA
µA
V
S
pF
pF
pF
ns
ns
ns
ns
V
160 —
ns
Test conditions
ID = –10 mA, VGS = 0
IG = ±100 µA, VDS = 0
VGS = ±16 V, VDS = 0
VDS = –50 V, VGS = 0
ID = –1 mA, VDS = –10 V
ID = –10 A, VGS = –10 V*1
ID = –10 A, VGS = –4 V*1
ID = –10 A, VDS = –10 V*1
VDS = –10 V, VGS = 0,
f = 1 MHz
ID = –10 A, VGS = –10 V,
RL = 3
IF = –20 A, VGS = 0
IF = –20 A, VGS = 0,
diF/dt = 50 A/µs
See characteristic curves of 2SJ291
3




Part Number J297
Description Silicon P-Channel MOS FET
Maker Hitachi
Total Page 4 Pages
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