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  Fujitsu Electronic Components Datasheet  

FRM5W232BS Datasheet

Incorporates a 30 micron InGaAs Avalanche Photodiode

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FRM5W232BS pdf
InGaAs-APD/Preamp
Receiver
FRM5W232BS
FEATURES
• 2.5Gb/s APD Receiver module in an industry
standard mini-DIL package
• High Sensitivity: -34 dBm (typ.)
• High Differential Electrical Output
• Power Overload: -4dBm (typ.)
• Integral Thermistor and GaAs IC Preamp
• Wide operating temperature range (-40 to +85°C)
APPLICATIONS
This APD detector preamp is intended to function as an optical receiver
in long haul SONET, SDH, and DWDM systems operating up to 2.7Gb/s.
The device operates in both the 1,310 and 1,550nm wavelength windows.
The nominal 10Kintegral thermistor allows accurate monitoring of the APD
temperature and facilitates the design of the APD bias control circuits.
The detector preamplifier is DC coupled and has a differential electrical output.
DESCRIPTION
The FRM5W232BS incorporates a 30 micron InGaAs Avalanche Photodiode (APD)
detector, a GaAs IC transimpedance preamplifier, and a thermistor in a mini-DIL type
package. The APD is processed with modern MOVPE techniques resulting in reliable
performance over a wide range of operating conditions. The lens coupling system
and the single mode fiber are assembled using Nd: YAG welding techniques.
The BS package is designed for a surface mount PC board assembly.
www.DaAtaBShSeOet4LUU.cTomE MAXIMUM RATINGS (Tc=25°C, unless otherwise specified)
Parameter
Symbol
Ratings
Storage Temperature
Operating Case Temperature
Supply Voltage
APD Reverse Voltage
APD Reverse Current
Note: Since the VB may vary from device to device,
VB data is attached to each device for reference.
.
Tstg
Top
VDD
VR
IR(peak)
-40 to +85
-40 to +85
0 to +4.5
0 to VB (Note)
2
Unit
°C
°C
V
V
mA
Edition 1.1
June 2002
1


  Fujitsu Electronic Components Datasheet  

FRM5W232BS Datasheet

Incorporates a 30 micron InGaAs Avalanche Photodiode

No Preview Available !

FRM5W232BS pdf
FRM5W232BS
InGaAs-APD/Preamp
Receiver
OPTICAL & ELECTRICAL CHARACTERISTICS
(Tc=25°C, λ=1,310/1,550nm, VDD=+3.3V unless otherwise specified)
Parameter
APD Responsivity
Symbol
R15
R13
Test Conditions
1,550nm, M=1
1,310nm, M=1
Min.
0.8
0.75
APD Breakdown Voltage
VB ID=10µA
40
Temperature Coefficient of VB
AC Transimpedance
Bandwidth
Equivalent Input Noise
Current Density
Sensitivity
Maximum Overload
γ
(Note 1)
0.08
AC-coupled, f=100MHz,
Zt RL=50
AC-Coupled, RL=50,
BW M=10,
-3dBm from 1MHz
-
2.2
in
AC-Coupled, RL=50,
Average in 1.8GHz
-
2.5Gb/s, NRZ,
PRBS=223-1, B.E.R.=10-10,
Pr Rext=-13dB, VR is set at
optimum value
Ta=25°C
Ta=-40 to +85°C
2.5Gb/s, NRZ,
PRBS=223-1, B.E.R.=10-10,
Po Rext=-13dB,
VR is set at M=3,
Ta=-40 to +85°C
-
-
-5
Limits
Typ.
0.85
Max.
-
0.85 -
50 65
0.12 0.15
2.0 -
2.5 -
7.0 8.5
-34.0 -33.0
-33.0 -32.0
-4 -
www.DaOtapSthieceat4lUR.ceotmurn Loss
ORL
30 -
-
Unit
A/W
A/W
V
V/°C
k
GHz
pA Hz
dBm
dBm
dBm
dB
Power Supply Current
Power Supply Voltage
ISS
VDD
- - 70
3.15 3.3 3.45
mA
V
Thermistor Resistance
Rth
9.5 10 10.5
k
Thermistor B Constant
Note: (1) γ=VB/Tc
B
3800 3900 4000
K
2


Part Number FRM5W232BS
Description Incorporates a 30 micron InGaAs Avalanche Photodiode
Maker Fujitsu Media Devices
Total Page 4 Pages
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