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Freescale Semiconductor Electronic Components Datasheet

MRF6S19200HSR3 Datasheet

RF Power Field Effect Transistors

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MRF6S19200HSR3 pdf
Freescale Semiconductor
Technical Data
RF Power Field Effect Transistors
N - Channel Enhancement - Mode Lateral MOSFETs
Designed for CDMA base station applications with frequencies from 1930 to
1990 MHz. Suitable for CDMA and multicarrier amplifier applications. To be
used in Class AB and Class C for PCN - PCS/cellular radio applications.
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PAR = 7.5 dB @ 0.01% Probability on CCDF.
Power Gain — 17.9 dB
Drain Efficiency — 29.5%
Device Output Signal PAR — 5.9 dB @ 0.01% Probability on CCDF
ACPR @ 5 MHz Offset — - 36 dBc in 3.84 MHz Channel Bandwidth
Capable of Handling 10:1 VSWR, @ 32 Vdc, 1960 MHz, 130 Watts CW
Output Power
Features
100% PAR Tested for Guaranteed Output Power Capability
Characterized with Series Equivalent Large - Signal Impedance Parameters
Internally Matched for Ease of Use
Integrated ESD Protection
Greater Negative Gate - Source Voltage Range for Improved Class C
Operation
Optimized for Doherty Applications
RoHS Compliant
In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel.
Document Number: MRF6S19200H
Rev. 0, 3/2008
MRF6S19200HR3
MRF6S19200HSR3
1930 - 1990 MHz, 56 W AVG., 28 V
SINGLE W - CDMA
LATERAL N - CHANNEL
RF POWER MOSFETs
CASE 465 - 06, STYLE 1
NI - 780
MRF6S19200HR3
CASE 465A - 06, STYLE 1
NI - 780S
MRF6S19200HSR3
Table 1. Maximum Ratings
Rating
Symbol
Value
Unit
Drain - Source Voltage
Gate - Source Voltage
Operating Voltage
Storage Temperature Range
Case Operating Temperature
Operating Junction Temperature (1,2)
CW Operation @ TC = 25°C
Derate above 25°C
VDSS
VGS
VDD
Tstg
TC
TJ
CW
- 0.5, +66
- 6.0, +10
32, +0
- 65 to +150
150
225
130
0.49
Vdc
Vdc
Vdc
°C
°C
°C
W
W/°C
Table 2. Thermal Characteristics
Characteristic
Symbol
Value (2,3)
Unit
Thermal Resistance, Junction to Case
Case Temperature 110°C, 89 W CW
Case Temperature 100°C, 55 W CW
RθJC
0.35
0.36
°C/W
1. Continuous use at maximum temperature will affect MTTF.
2. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access
MTTF calculators by product.
3. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf.
Select Documentation/Application Notes - AN1955.
© Freescale Semiconductor, Inc., 2008. All rights reserved.
RF Device Data
Freescale Semiconductor
MRF6S19200HR3 MRF6S19200HSR3
1


Freescale Semiconductor Electronic Components Datasheet

MRF6S19200HSR3 Datasheet

RF Power Field Effect Transistors

No Preview Available !

MRF6S19200HSR3 pdf
Table 3. ESD Protection Characteristics
Test Methodology
Class
Human Body Model (per JESD22 - A114)
1B (Minimum)
Machine Model (per EIA/JESD22 - A115)
A (Minimum)
Charge Device Model (per JESD22 - C101)
IV (Minimum)
Table 4. Electrical Characteristics (TC = 25°C unless otherwise noted)
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Off Characteristics
Characteristic
Symbol
Min
Typ
Max Unit
Zero Gate Voltage Drain Leakage Current
(VDS = 66 Vdc, VGS = 0 Vdc)
IDSS
10 μAdc
Zero Gate Voltage Drain Leakage Current
(VDS = 28 Vdc, VGS = 0 Vdc)
IDSS
1 μAdc
Gate - Source Leakage Current
(VGS = 5 Vdc, VDS = 0 Vdc)
IGSS
10 μAdc
On Characteristics
Gate Threshold Voltage
(VDS = 10 Vdc, ID = 372 μAdc)
Gate Quiescent Voltage
(VDD = 28 Vdc, ID = 1600 mAdc, Measured in Functional Test)
Drain - Source On - Voltage
(VGS = 10 Vdc, ID = 3.71 Adc)
Dynamic Characteristics (1)
Reverse Transfer Capacitance
(VDS = 28 Vdc ± 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc)
Output Capacitance
(VDS = 28 Vdc ± 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc)
Input Capacitance
(VDS = 28 Vdc, VGS = 0 Vdc ± 30 mV(rms)ac @ 1 MHz)
VGS(th)
1
2
3 Vdc
VGS(Q)
2
3
4 Vdc
VDS(on)
0.1
0.2
0.3 Vdc
Crss 2.3
Coss — 185 —
Ciss — 503 —
pF
pF
pF
Functional Tests (In Freescale Test Fixture, 50 ohm system) VDD = 28 Vdc, IDQ = 1600 mA, Pout = 56 W Avg., f = 1932.5 MHz and
f = 1987.5 MHz, Single - Carrier W - CDMA, 3GPP Test Model 1, 64 DPCH, 50% Clipping, Input Signal PAR = 7.5 dB @ 0.01% Probability on
CCDF. ACPR measured in 3.84 MHz Channel Bandwidth @ ±5 MHz Offset.
Power Gain
Gps 15 17.9 19 dB
Drain Efficiency
ηD 26 29.5 — %
Output Peak - to - Average Ratio @ 0.01% Probability on CCDF
PAR 5.5 5.9 — dB
Adjacent Channel Power Ratio
ACPR
- 36 - 34 dBc
Input Return Loss
IRL — - 14 - 8 dB
1. Part internally matched both on input and output.
(continued)
MRF6S19200HR3 MRF6S19200HSR3
2
RF Device Data
Freescale Semiconductor


Part Number MRF6S19200HSR3
Description RF Power Field Effect Transistors
Maker Freescale Semiconductor
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