http://www.www.datasheet4u.com

900,000+ Datasheet PDF Search and Download

Datasheet4U offers most rated semiconductors datasheets pdf




Freescale Semiconductor Electronic Components Datasheet

MRF6S19100HSR3 Datasheet

RF Power Field Effect Transistors

No Preview Available !

MRF6S19100HSR3 pdf
Freescale Semiconductor
Technical Data
RF Power Field Effect Transistors
N - Channel Enhancement - Mode Lateral MOSFETs
Designed for N- CDMA base station applications with frequencies from 1930
to 1990 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applica-
t i o n s . To b e u s e d i n C l a s s A B f o r P C N - P C S / c e l l u l a r r a d i o a n d W L L
www.datasahpepeltic4au.tcioonms.
TPTyroapuftifci=cal2C22o-dWCeaastrtr8sieTArhvNrgo-.u,CgFDhuMl1l AF3)rPeCeqhrufaoenrnmnceyalnBBcaaenn:ddV,wDISiDd-t=h952=8(1PV.i2olo2ltt8s, 8,SIyMDnQHc,=z.P9Pa0Ag0iRnmg=A, ,
9.8 dB @ 0.01% Probability on CCDF.
Power Gain — 16.1 dB
Drain Efficiency — 28%
IM3 @ 2.5 MHz Offset — - 37 dBc @ 1.2288 MHz Channel Bandwidth
ACPR @ 885 kHz Offset — - 51 dBc @ 30 kHz Channel Bandwidth
Capable of Handling 10:1 VSWR, @ 28 Vdc, 1960 MHz, 100 Watts CW
Output Power
Characterized with Series Equivalent Large - Signal Impedance Parameters
Internally Input and Output Matched for Ease of Use
Qualified Up to a Maximum of 32 VDD Operation
Integrated ESD Protection
Lower Thermal Resistance Package
Designed for Lower Memory Effects and Wide Instantaneous Bandwidth
Applications
Low Gold Plating Thickness on Leads, 40µ″ Nominal.
Pb - Free and RoHS Compliant
In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel.
Document Number: MRF6S19100H
Rev. 3, 8/2005
MRF6S19100HR3
MRF6S19100HSR3
1990 MHz, 22 W AVG., 28 V
2 x N - CDMA
LATERAL N - CHANNEL
RF POWER MOSFETs
CASE 465 - 06, STYLE 1
NI - 780
MRF6S19100HR3
CASE 465A - 06, STYLE 1
NI - 780S
MRF6S19100HSR3
Table 1. Maximum Ratings
Rating
Symbol
Value
Drain - Source Voltage
Gate - Source Voltage
Total Device Dissipation @ TC = 25°C
Derate above 25°C
VDSS
VGS
PD
- 0.5, +68
- 0.5, +12
398
2.3
Storage Temperature Range
Operating Junction Temperature
CW Operation
Tstg - 65 to +150
TJ 200
CW 100
Table 2. Thermal Characteristics
Characteristic
Symbol
Value (1,2)
Thermal Resistance, Junction to Case
Case Temperature 80°C, 100 W CW
Case Temperature 77°C, 22 W CW
RθJC
0.44
0.50
1. MTTF calculator available at http://www.freescale.com/rf. Select Tools/Software/Application Software/Calculators to access
the MTTF calculators by product.
2. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf.
Select Documentation/Application Notes - AN1955.
Unit
Vdc
Vdc
W
W/°C
°C
°C
W
Unit
°C/W
NOTE - CAUTION - MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and
packaging MOS devices should be observed.
Freescale Semiconductor, Inc., 2005. All rights reserved.
RF Device Data
Freescale Semiconductor
MRF6S19100HR3 MRF6S19100HSR3
1


Freescale Semiconductor Electronic Components Datasheet

MRF6S19100HSR3 Datasheet

RF Power Field Effect Transistors

No Preview Available !

MRF6S19100HSR3 pdf
Table 3. ESD Protection Characteristics
Test Methodology
Class
Human Body Model (per JESD22 - A114)
3A (Minimum)
Machine Model (per EIA/JESD22 - A115)
B (Minimum)
Charge Device Model (per JESD22 - C101)
IV (Minimum)
Table 4. Electrical Characteristics (TC = 25°C unless otherwise noted)
www.datasheet4u.com
Off Characteristics
Characteristic
Symbol
Min
Typ
Max Unit
Zero Gate Voltage Drain Leakage Current
(VDS = 68 Vdc, VGS = 0 Vdc)
IDSS
10 µAdc
Zero Gate Voltage Drain Leakage Current
(VDS = 28 Vdc, VGS = 0 Vdc)
IDSS
1 µAdc
Gate - Source Leakage Current
(VGS = 5 Vdc, VDS = 0 Vdc)
IGSS
1 µAdc
On Characteristics
Gate Threshold Voltage
(VDS = 10 Vdc, ID = 250 µAdc)
Gate Quiescent Voltage
(VDS = 28 Vdc, ID = 900 mAdc)
Drain - Source On - Voltage
(VGS = 10 Vdc, ID = 2.2 Adc)
Forward Transconductance
(VDS = 10 Vdc, ID = 2 Adc)
Dynamic Characteristics (1)
Reverse Transfer Capacitance
(VDS = 28 Vdc ± 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc)
VGS(th)
1
2
3 Vdc
VGS(Q)
2
2.8
4 Vdc
VDS(on)
0.1
0.21
0.3
Vdc
gfs — 5.3 — S
Crss — 1.5 — pF
Functional Tests (In Freescale Test Fixture, 50 ohm system) VDD = 28 Vdc, IDQ = 900 mA, Pout = 22 W Avg., f1 = 1930 MHz,
f2 = 1932.5 MHz and f1 = 1987.5 MHz, f2 = 1990 MHz, 2 - carrier N - CDMA, 1.2288 MHz Channel Bandwidth Carriers. ACPR measured in
30 kHz Channel Bandwidth @ ±885 kHz Offset. IM3 measured in 1.2288 MHz Channel Bandwidth @ ±2.5 MHz Offset. PAR = 9.8 dB @
0.01% Probability on CCDF.
Power Gain
Gps 15 16.1 18 dB
Drain Efficiency
ηD 26 28 — %
Intermodulation Distortion
IM3 — - 37 - 35 dBc
Adjacent Channel Power Ratio
ACPR
- 51 - 48 dBc
Input Return Loss
IRL — - 15 - 9 dB
1. Part is internally matched both on input and output.
MRF6S19100HR3 MRF6S19100HSR3
2
RF Device Data
Freescale Semiconductor


Part Number MRF6S19100HSR3
Description RF Power Field Effect Transistors
Maker Freescale Semiconductor
Total Page 12 Pages
PDF Download
MRF6S19100HSR3 pdf
Download PDF File
MRF6S19100HSR3 pdf
View for Mobile






Related Datasheet

1 MRF6S19100HSR3 RF Power Field Effect Transistors Freescale Semiconductor
Freescale Semiconductor
MRF6S19100HSR3 pdf




Part Number Start With

0    1    2    3    4    5    6    7    8    9    A    B    C    D    E    F    G    H    I    J    K    L    M    N    O    P    Q    R    S    T    U    V    W    X    Y    Z

site map

webmaste! click here

contact us

Buy Components