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MRF6S18100NR1 Datasheet

RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs

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MRF6S18100NR1 pdf
Freescale Semiconductor
Technical Data
RF Power Field Effect Transistors
N - Channel Enhancement - Mode Lateral MOSFETs
Designed for GSM and GSM EDGE base station applications with
frequencies from 1800 to 2000 MHz. Suitable for TDMA, CDMA and
multicarrier amplifier applications.
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Power Gain — 14.5 dB
Drain Efficiency — 49%
GSM EDGE Application
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1ID8Q80=M7H00z
mA,
or
Power Gain — 15 dB
Drain Efficiency — 35%
Spectral Regrowth @ 400 kHz Offset = - 63 dBc
Spectral Regrowth @ 600 kHz Offset = - 76 dBc
EVM — 2% rms
Capable of Handling 5:1 VSWR, @ 28 Vdc, 1990 MHz, 100 Watts CW
Output Power
Features
Characterized with Series Equivalent Large - Signal Impedance Parameters
Internally Matched for Ease of Use
Qualified Up to a Maximum of 32 VDD Operation
Integrated ESD Protection
Designed for Lower Memory Effects and Wide Instantaneous Bandwidth
Applications
200°C Capable Plastic Package
RoHS Compliant
In Tape and Reel. R1 Suffix = 500 Units per 44 mm, 13 inch Reel.
Document Number: MRF6S18100N
Rev. 1, 5/2006
MRF6S18100NR1
MRF6S18100NBR1
1805- 1990 MHz, 100 W, 28 V
GSM/GSM EDGE
LATERAL N - CHANNEL
RF POWER MOSFETs
CASE 1486 - 03, STYLE 1
TO - 270 WB - 4
MRF6S18100NR1
CASE 1484 - 04, STYLE 1
TO - 272 WB - 4
MRF6S18100NBR1
Table 1. Maximum Ratings
Rating
Symbol
Value
Drain- Source Voltage
Gate- Source Voltage
Total Device Dissipation @ TC = 25°C
Derate above 25°C
VDSS
VGS
PD
- 0.5, +68
- 0.5, +12
343
1.96
Storage Temperature Range
Operating Junction Temperature
Table 2. Thermal Characteristics
Tstg - 65 to +175
TJ 200
Characteristic
Symbol
Value(1,2)
Thermal Resistance, Junction to Case
Case Temperature 80°C, 100 CW
Case Temperature 77°C, 40 CW
RθJC
0.51
0.62
1. MTTF calculator available at http://www.freescale.com/rf. Select Tools/Software/Application Software/Calculators to access
the MTTF calculators by product.
2. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf.
Select Documentation/Application Notes - AN1955.
Unit
Vdc
Vdc
W
W/°C
°C
°C
Unit
°C/W
© Freescale Semiconductor, Inc., 2006. All rights reserved.
RF Device Data
Freescale Semiconductor
MRF6S18100NR1 MRF6S18100NBR1
1


Freescale Semiconductor Electronic Components Datasheet

MRF6S18100NR1 Datasheet

RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs

No Preview Available !

MRF6S18100NR1 pdf
Table 3. ESD Protection Characteristics
Test Methodology
Class
Human Body Model (per JESD22 - A114)
1B (Minimum)
Machine Model (per EIA/JESD22 - A115)
A (Minimum)
Charge Device Model (per JESD22 - C101)
IV (Minimum)
Table 4. Moisture Sensitivity Level
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Test Methodology
Per JESD 22 - A113, IPC/JEDEC J - STD - 020
Rating
3
Package Peak Temperature
260
Table 5. Electrical Characteristics (TC = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Off Characteristics
Zero Gate Voltage Drain Leakage Current
(VDS = 68 Vdc, VGS = 0 Vdc)
IDSS
10
Zero Gate Voltage Drain Leakage Current
(VDS = 28 Vdc, VGS = 0 Vdc)
IDSS
1
Gate- Source Leakage Current
(VGS = 5 Vdc, VDS = 0 Vdc)
IGSS
— 500
On Characteristics
Gate Threshold Voltage
(VDS = 10 Vdc, ID = 330 μAdc)
VGS(th)
1.6
2
3
Gate Quiescent Voltage
(VDS = 28 Vdc, ID = 900 mAdc, Measured in Functional Test)
VGS(Q)
1.5
2.8
3.5
Drain- Source On - Voltage
(VGS = 10 Vdc, ID = 3.3 Adc)
VDS(on)
0.24
Forward Transconductance
(VDS = 10 Vdc, ID = 3.3 Adc)
gfs — 5.3 —
Dynamic Characteristics(1)
Reverse Transfer Capacitance
(VDS = 28 Vdc ± 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc)
Crss — 1.5 —
Functional Tests (In Freescale Test Fixture, 50 ohm system) VDD = 28 Vdc, Pout = 100 W, IDQ = 900 mA, f = 1930- 1990 MHz
Power Gain
Gps 13 14.5 16
Drain Efficiency
ηD 47 49 —
Input Return Loss
IRL — - 12 - 9
Pout @ 1 dB Compression Point
1. Part internally matched both on input and output.
P1dB
100
110
Unit
°C
Unit
μAdc
μAdc
nAdc
Vdc
Vdc
Vdc
S
pF
dB
%
dB
W
(continued)
MRF6S18100NR1 MRF6S18100NBR1
2
RF Device Data
Freescale Semiconductor


Part Number MRF6S18100NR1
Description RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs
Maker Freescale Semiconductor
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