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Freescale Semiconductor Electronic Components Datasheet

MRF18090AR3 Datasheet

RF Power Field Effect Transistor

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MRF18090AR3 pdf
Freescale Semiconductor
Technical Data
RF Power Field Effect Transistor
N - Channel Enhancement - Mode Lateral MOSFET
Designed for GSM and GSM EDGE base station applications with frequencies
from 1.8 to 2.0 GHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier
www.datasaahppeppelltiic4caua.ttciiooonmnss.. To be used in Class AB for GSM and GSM EDGE cellular radio
GSM and GSM EDGE Performances, Full Frequency Band
Power Gain — 13.5 dB (Typ) @ 90 Watts CW
Efficiency — 52% (Typ) @ 90 Watts CW
Capable of Handling 10:1 VSWR, @ 26 Vdc, 90 Watts CW Output Power
Features
Internally Matched for Ease of Use
High Gain, High Efficiency and High Linearity
Integrated ESD Protection
Designed for Maximum Gain and Insertion Phase Flatness
Excellent Thermal Stability
Characterized with Series Equivalent Large - Signal Impedance Parameters
RoHS Compliant
In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel.
Document Number: MRF18090A
Rev. 7, 5/2006
MRF18090AR3
1.80 - 1.88 GHz, 90 W, 26 V
LATERAL N - CHANNEL
RF POWER MOSFET
CASE 465B - 03, STYLE 1
NI - 880
Table 1. Maximum Ratings
Rating
Drain- Source Voltage
Gate- Source Voltage
Total Device Dissipation @ TC = 25°C
Derate above 25°C
Storage Temperature Range
Case Operating Temperature
Operating Junction Temperature
Table 2. Thermal Characteristics
Characteristic
Thermal Resistance, Junction to Case
Table 3. ESD Protection Characteristics
Test Conditions
Human Body Model
Machine Model
Symbol
VDSS
VGS
PD
Tstg
TC
TJ
Symbol
RθJC
Value
- 0.5, +65
- 0.5, +15
250
1.43
- 65 to +150
150
200
Value
0.7
Class
2 (Minimum)
M3 (Minimum)
Unit
Vdc
Vdc
W
W/°C
°C
°C
°C
Unit
°C/W
© Freescale Semiconductor, Inc., 2006. All rights reserved.
RF Device Data
Freescale Semiconductor
MRF18090AR3
1


Freescale Semiconductor Electronic Components Datasheet

MRF18090AR3 Datasheet

RF Power Field Effect Transistor

No Preview Available !

MRF18090AR3 pdf
Table 4. Electrical Characteristics (TC = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max Unit
Off Characteristics
Drain- Source Breakdown Voltage
(VGS = 0 Vdc, ID = 100 μAdc)
Zero Gate Voltage Drain Current
(VDS = 26 Vdc, VGS = 0 Vdc)
www.daGtaasteh-eSeot4uurc.ceoLmeakage Current
(VGS = 5 Vdc, VDS = 0 Vdc)
On Characteristics
Gate Quiescent Voltage
(VDS = 26 Vdc, ID = 750 mAdc)
Drain- Source On - Voltage
(VGS = 10 Vdc, ID = 1 Adc)
Forward Transconductance
(VDS = 10 Vdc, ID = 3 Adc)
Dynamic Characteristics
V(BR)DSS
65
— Vdc
IDSS
10 μAdc
IGSS
1 μAdc
VGS(Q)
2.5
3.7
4.5
Vdc
VDS(on)
0.1
Vdc
gfs — 7.2 — S
Reverse Transfer Capacitance
(VDS = 26 Vdc ± 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc)
Functional Tests (In Freescale Test Fixture)
Common- Source Amplifier Power Gain @ 90 W (1)
(VDD = 26 Vdc, IDQ = 750 mA, f = 1805 - 1880 MHz)
Drain Efficiency @ 90 W (1)
(VDD = 26 Vdc, IDQ = 750 mA, f = 1805 - 1880 MHz)
Input Return Loss (1)
(VDD = 26 Vdc, Pout = 90 W CW, IDQ = 750 mA,
f = 1805 - 1880 MHz)
Crss — 4.2 —
Gps
12.0 13.5
η
47 52 —
IRL
— — - 10
pF
dB
%
dB
1. To meet application requirements, Freescale test fixtures have been designed to cover the full GSM1800 band, ensuring batch - to - batch
consistency.
MRF18090AR3
2
RF Device Data
Freescale Semiconductor


Part Number MRF18090AR3
Description RF Power Field Effect Transistor
Maker Freescale Semiconductor
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