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Freescale Semiconductor Electronic Components Datasheet

MHW10236N Datasheet

Gallium Arsenide CATV Amplifier Module

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MHW10236N pdf
Freescale Semiconductor
Technical Data
Gallium Arsenide
CATV Amplifier Module
Features
Specified for 79 - , 112 - and 132 - Channel Loading
Excellent Distortion Performance
Integrated ESD Protection Diodes
GaAs FET Transistor Technology
Unconditionally Stable Under All Load Conditions
Applications
CATV Systems Operating in the 40 to 1000 MHz Frequency Range
Input Stage Amplifier in Optical Nodes, Line Extenders and Trunk
Distribution Amplifiers for CATV Systems
Driver Amplifier in Linear General Purpose Applications
Description
24 Vdc Supply, 40 to 1000 MHz, CATV GaAs Forward Amplifier Module
RoHS Compliant
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Document Number: MHW10236N
Rev. 0, 11/2006
MHW10236N
1000 MHz
23.8 dB GAIN
132 - CHANNEL
GaAs CATV AMPLIFIER MODULE
Table 1. Maximum Ratings
CASE 1302 - 01, STYLE 1
Rating
Symbol
Value
Unit
RF Voltage Input (Single Tone)
DC Supply Voltage
Operating Case Temperature Range
Storage Temperature Range
Table 2. ESD Maximum Ratings
Vin +65 dBmV
VCC +26 Vdc
TC
- 20 to +100
°C
Tstg
- 40 to +100
°C
Rating
Surge Voltage per IEC 1000 - 4 - 5
Input Value
200
Output Value
200
Unit
V
Human Body Model per Mil. Std. 1686
2 2 kV
Table 3. Electrical Characteristics (VCC = 24 Vdc, TC = +30°C, 75 Ω system unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max Unit
Frequency Range
BW
40
1000
MHz
Power Gain
Slope
1000 MHz
40 - 1000 MHz
Gp 23 23.8 24.5 dB
S 0 0.55 1.2 dB
Gain Flatness (40 - 870 MHz, Peak - to - Valley)
Return Loss — Input
(Zo = 75 Ohms)
40 - 500 MHz
501 - 870 MHz
871 - 1000 MHz
GF — — 0.8 dB
IRL dB
20 — —
18 — —
15 — —
Return Loss — Output
(Zo = 75 Ohms)
40 - 300 MHz
301 - 750 MHz
751 - 870 MHz
871 - 1000 MHz
ORL
dB
20 — —
19 — —
16 — —
12 — —
© Freescale Semiconductor, Inc., 2006. All rights reserved.
RF Device Data
Freescale Semiconductor
MHW10236N
1


Freescale Semiconductor Electronic Components Datasheet

MHW10236N Datasheet

Gallium Arsenide CATV Amplifier Module

No Preview Available !

MHW10236N pdf
Table 3. Electrical Characteristics (VCC = 24 Vdc, TC = +30°C, 75 Ω system unless otherwise noted) (continued)
Characteristic
Symbol
Min
Typ
Max
Composite Second Order
(Vout = +48 dBmV/ch., Worst Case)
(Vout = +46 dBmV/ch., Worst Case)
(Vout = +44 dBmV/ch., Worst Case)
Cross Modulation Distortion @ Ch 2
(Vout = +48 dBmV/ch., FM = 55.25 MHz)
(Vout = +46 dBmV/ch., FM = 55.25 MHz)
(Vout = +44 dBmV/ch., FM = 55.25 MHz)
Composite Triple Beat
(Vout = +48 dBmV/ch., Worst Case)
(Vout = +46 dBmV/ch., Worst Case)
(Vout = +44 dBmV/ch., Worst Case)
Noise Figure
79 - Channel FLAT
112 - Channel FLAT
132 - Channel FLAT
79 - Channel FLAT
112 - Channel FLAT
132 - Channel FLAT
79 - Channel FLAT
112 - Channel FLAT
132 - Channel FLAT
50 MHz
550 MHz
750 MHz
870 MHz
1000 MHz
CSO79
CSO112
CSO132
XMD79
XMD112
XMD132
CTB79
CTB112
CTB132
NF
- 66 - 63
- 64 - 60
- 64 - 60
- 57 —
- 57 —
- 57 —
- 66 - 60
- 66 - 60
- 68 - 60
5.0 6.0
5.0 —
5.0 —
5.3 6.5
5.6 6.5
DC Current (VDC = 24 V, TC = 45°C)
IDC 240 255 270
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Unit
dBc
dBc
dBc
dB
mA
MHW10236N
2
RF Device Data
Freescale Semiconductor


Part Number MHW10236N
Description Gallium Arsenide CATV Amplifier Module
Maker Freescale Semiconductor
Total Page 5 Pages
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