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Freescale Semiconductor Electronic Components Datasheet

MHL9236N Datasheet

Cellular Band RF Linear LDMOS Amplifier

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Freescale Semiconductor
Technical Data
Cellular Band
RF Linear LDMOS Amplifier
Designed for ultra - linear amplifier applications in 50 ohm systems operating in
the cellular frequency band. A silicon FET Class A design provides outstanding
linearity and gain. In addition, the excellent group delay and phase linearity
characteristics are ideal for the most demanding analog or digital modulation
systems, such as TDMA, CDMA or QPSK.
Third Order Intercept: 47 dBm Typ
Power Gain: 30.5 dB Typ (@ f = 880 MHz)
Input and Output VSWR v 1.5:1
Features
Excellent Phase Linearity and Group Delay Characteristics
Ideal for Feedforward Base Station Applications
For Use in TDMA, CDMA, QPSK or Analog Systems
N Suffix Indicates Lead - Free Terminations
Document Number: MHL9236N
Rev. 8, 8/2006
MHL9236N
800 - 960 MHz
2.5 W, 30.5 dB
RF LINEAR LDMOS AMPLIFIER
CASE 301AP - 02, STYLE 1
Table 1. Absolute Maximum Ratings (TC = 25°C unless otherwise noted)
Rating
Symbol
DC Supply Voltage
RF Input Power
Storage Temperature Range
Operating Case Temperature Range
VDD
Pin
Tstg
TC
Table 2. Electrical Characteristics (VDD = 26 Vdc, TC = 25°C; 50 Ω System)
Characteristic
Symbol
Supply Current
Power Gain
Gain Flatness
Power Output @ 1 dB Compression
(f = 880 MHz)
(f = 800 - 960 MHz)
(f = 880 MHz)
IDD
Gp
GF
P1dB
Third Order Intercept (f1 = 879 MHz, f2 = 884 MHz)
ITO
Noise Figure
(f = 800 - 960 MHz)
NF
Value
30
+10
- 40 to +100
- 20 to +100
Min Typ Max
— 550 620
29 30.5 32
— 0.1 0.3
33 34 —
46 47 —
— 3.5 4.5
Unit
Vdc
dBm
°C
°C
Unit
mA
dB
dB
dBm
dBm
dB
NOTE - CAUTION - MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and
packaging MOS devices should be observed.
© Freescale Semiconductor, Inc., 2006. All rights reserved.
RF Device Data
Freescale Semiconductor
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MHL9236N
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Freescale Semiconductor Electronic Components Datasheet

MHL9236N Datasheet

Cellular Band RF Linear LDMOS Amplifier

No Preview Available !

MHL9236N pdf
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TYPICAL CHARACTERISTICS
40 50
Gp ITO
20 45
0 IRL
ORL
−20
−40
400
VDD = 26 Vdc
TC = 25°C
800 1200 1600
f, FREQUENCY (MHz)
Figure 1. Power Gain, Input Return Loss,
Output Return Loss versus Frequency
2000
40
35
P1dB
VDD = 26 Vdc
TC = 25°C
30
400 600 800 1000
f, FREQUENCY (MHz)
Figure 2. P1dB, ITO versus Frequency
1200
33
32 VDD = 26 Vdc
f = 880 MHz
31
Gp
30
580
575
29
IDD
28
570
565
27
−40 −20
0 20 40 60
TEMPERATURE (°C)
560
80 100 120
Figure 3. Power Gain, IDD versus Temperature
50
48
ITO
VDD = 26 Vdc
f = 880 MHz
35
46 34.5
44 34
P1dB
42 33.5
40
−40 −20
0 20 40 60
TEMPERATURE (°C)
80 100
Figure 4. ITO, P1dB versus Temperature
33
120
−420 2.2
−425
−430
PHASE
−435
2.1
−440 GROUP DELAY
2.0
−445
VDD = 26 Vdc
f = 880 MHz
−450
−40 −20
0 20 40 60
TEMPERATURE (°C)
1.9
80 100 120
Figure 5. Phase(1), Group Delay(1) versus Temperature
1. In Production Test Fixture
MHL9236N
2
DataSheet4 U .com
0.30 0.50
0.20 0.40
PHASE LINEARITY
0.10
0
−40
0.30
GF
VDD = 26 Vdc
f = 800−960 MHz
0.20
−20 0 20 40 60 80 100 120
TEMPERATURE (°C)
Figure 6. Gain Flatness, Phase Linearity
versus Temperature
RF Device Data
Freescale Semiconductor


Part Number MHL9236N
Description Cellular Band RF Linear LDMOS Amplifier
Maker Freescale Semiconductor
Total Page 5 Pages
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