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Freescale Semiconductor Electronic Components Datasheet

MD7IC2050NBR1 Datasheet

RF LDMOS Wideband Integrated Power Amplifiers

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MD7IC2050NBR1 pdf
Freescale Semiconductor
Technical Data
RF LDMOS Wideband Integrated
Power Amplifiers
The MD7IC2050N wideband integrated circuit is designed with on - chip
matching that makes it usable from 1750 - 2050 MHz. This multi - stage
structure is rated for 26 to 32 Volt operation and covers all typical cellular
base station modulation formats.
Typical Doherty Single - Carrier W - CDMA Performance: VDD = 28 Volts,
IDQ1A = IDQ1B = 30 mA, IDQ2A = 230 mA, VG2B = 1.4 Vdc, Pout = 10 Watts
Avg., Channel Bandwidth = 3.84 MHz, Input Signal PAR = 9.9 dB @ 0.01%
Probability on CCDF.
Frequency
Gps
(dB)
PAE
(%)
Output PAR
(dB)
ACPR
(dBc)
2025 MHz 30.5 34.7 8.7 - 37.4
Capable of Handling 5:1 VSWR, @ 32 Vdc, 2017.5 MHz, 79 Watts CW
Output Power (3 dB Input Overdrive from Rated Pout)
Stable into a 5:1 VSWR. All Spurs Below - 60 dBc @ 20 Watts to 80 Watts
CW Pout
Typical Pout @ 3 dB Compression Point ] 74 Watts CW
1880 MHz
Typical Doherty Single - Carrier W - CDMA Performance: VDD = 28 Volts,
IDQ1A = IDQ1B = 30 mA, IDQ2A = 230 mA, VG2B = 1.4 Vdc, Pout = 10 Watts
Avg., Channel Bandwidth = 3.84 MHz, Input Signal PAR = 9.9 dB @ 0.01%
Probability on CCDF.
Frequency
Gps
(dB)
PAE
(%)
Output PAR
(dB)
ACPR
(dBc)
1880 MHz 30.3 35.2 8.6 - 34.9
1900 MHz 30.2 34.9 8.6 - 36.3
1920 MHz 30.1 34.8 8.7 - 36.9
Features
100% PAR Tested for Guaranteed Output Power Capability
Production Tested in a Symmetrical Doherty Configuration
Characterized with Series Equivalent Large - Signal Impedance Parameters
and Common Source S - Parameters
On - Chip Matching (50 Ohm Input, DC Blocked)
Integrated Quiescent Current Temperature Compensation with
Enable/Disable Function (1)
Integrated ESD Protection
225°C Capable Plastic Package
RoHS Compliant
In Tape and Reel. R1 Suffix = 500 Units per 44 mm, 13 inch Reel
Document Number: MD7IC2050N
Rev. 0, 8/2009
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MD7IC2050NR1
MD7IC2050GNR1
MD7IC2050NBR1
1880 - 2100 MHz, 10 W AVG., 28 V
SINGLE W - CDMA
RF LDMOS WIDEBAND
INTEGRATED POWER AMPLIFIERS
CASE 1618 - 02
TO - 270 WB - 14
PLASTIC
MD7IC2050NR1
CASE 1621 - 02
TO - 270 WB - 14 GULL
PLASTIC
MD7IC2050GNR1
CASE 1617 - 02
TO - 272 WB - 14
PLASTIC
MD7IC2050NBR1
1. Refer to AN1977, Quiescent Current Thermal Tracking Circuit in the RF Integrated Circuit Family and to AN1987, Quiescent Current Control
for the RF Integrated Circuit Device Family. Go to http://www.freescale.com/rf. Select Documentation/Application Notes - AN1977 or AN1987.
© Freescale Semiconductor, Inc., 2009. All rights reserved.
RF Device Data
Freescale Semiconductor
MD7IC2050NR1 MD7IC2050GNR1 MD7IC2050NBR1
1


Freescale Semiconductor Electronic Components Datasheet

MD7IC2050NBR1 Datasheet

RF LDMOS Wideband Integrated Power Amplifiers

No Preview Available !

MD7IC2050NBR1 pdf
VDS1A
RFinA
VGS1A
VGS2A
VGS1B
VGS2B
RFinB
VDS1B
Quiescent Current
Temperature Compensation (1)
Quiescent Current
Temperature Compensation (1)
CARRIER (2)
RFout1/VDS2A
PEAKING (2)
RFout2/VDS2B
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VDS1A
VGS2A
VGS1A
RFinA
NC
NC
NC
NC
RFinB
VGS1B
VGS2B
VDS1B
1
2
3 14
4
5
6
7
8
9 13
10
11
12
(Top View)
RFout1/VDS2A
RFout2/VDS2B
Note: Exposed backside of the package is
the source terminal for the transistors.
Figure 1. Functional Block Diagram
Figure 2. Pin Connections
1. Refer to AN1977, Quiescent Current Thermal Tracking Circuit in the RF Integrated Circuit Family and to AN1987, Quiescent Current Control
for the RF Integrated Circuit Device Family. Go to http://www.freescale.com/rf. Select Documentation/Application Notes - AN1977 or AN1987.
2. Peaking and Carrier orientation is determined by the test fixture design.
Table 1. Maximum Ratings
Rating
Symbol
Value
Unit
Drain - Source Voltage
Gate - Source Voltage
Operating Voltage
Storage Temperature Range
Case Operating Temperature
Operating Junction Temperature (1,2)
Input Power
Table 2. Thermal Characteristics
VDSS
VGS
VDD
Tstg
TC
TJ
Pin
- 0.5, +65
- 0.5, +10
32, +0
- 65 to +150
150
225
28
Vdc
Vdc
Vdc
°C
°C
°C
dBm
Characteristic
Symbol
Value (2,3)
Unit
Final Doherty Application
Thermal Resistance, Junction to Case
Case Temperature 81°C, Pout = 50 W CW
Stage 1A, 28 Vdc, IDQ1A = 30 mA
Stage 1B, 28 Vdc, IDQ1B = 30 mA
Stage 2A, 28 Vdc, IDQ2A = 230 mA
Stage 2B, 28 Vdc, VG2B = 1.4 Vdc
Case Temperature 73°C, Pout = 10 W CW
Stage 1A, 28 Vdc, IDQ1A = 30 mA
Stage 1B, 28 Vdc, IDQ1B = 30 mA
Stage 2A, 28 Vdc, IDQ2A = 230 mA
*Stage 2B, 28 Vdc, VG2B = 1.4 Vdc
RθJC
8.2
6.1
1.8
1.4
8.3
3.6
1.9
*Stage 2B is turned off
°C/W
1. Continuous use at maximum temperature will affect MTTF.
2. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF
calculators by product.
3. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf.
Select Documentation/Application Notes - AN1955.
MD7IC2050NR1 MD7IC2050GNR1 MD7IC2050NBR1
2
RF Device Data
Freescale Semiconductor


Part Number MD7IC2050NBR1
Description RF LDMOS Wideband Integrated Power Amplifiers
Maker Freescale Semiconductor
Total Page 24 Pages
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