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Freescale Semiconductor Electronic Components Datasheet

MD7IC18120NR1 Datasheet

RF LDMOS Wideband Integrated Power Amplifiers

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MD7IC18120NR1 pdf
Freescale Semiconductor
Technical Data
Document Number: MD7IC18120N
www.DRaetavS.he0e,t45U/.2co0m10
RF LDMOS Wideband Integrated
Power Amplifiers
The MD7IC18120N/GN wideband integrated circuit is designed with on--chip
matching that makes it usable from 1805 to 1880 MHz. This multi--stage
structure is rated for 26 to 32 Volt operation and covers all typical cellular base
station modulation formats.
Typical Doherty Single--Carrier W--CDMA Performance: VDD = 28 Volts,
IDQ1A = 70 mA, IDQ1B = 160 mA, IDQ2B = 500 mA, VGS2A = 1.7 Vdc, Pout =
30 Watts Avg., IQ Magnitude Clipping, Channel Bandwidth = 3.84 MHz,
Input Signal PAR = 7.5 dB @ 0.01% Probability on CCDF.
MD7IC18120NR1
MD7IC18120GNR1
1805--1880 MHz, 30 W AVG., 28 V
SINGLE W--CDMA
RF LDMOS WIDEBAND
INTEGRATED POWER AMPLIFIERS
Frequency
1805 MHz
1840 MHz
1880 MHz
Gps
(dB)
25.7
25.7
25.8
PAE
(%)
36.7
36.3
35.3
Output PAR
(dB)
6.9
6.9
6.7
CASE 1866--02
TO--270 WBL--16
PLASTIC
MD7IC18120NR1
Capable of Handling 10:1 VSWR, @ 32 Vdc, 1840 MHz, 140 Watts CW
Output Power
Stable into a 5:1 VSWR. All Spurs Below --60 dBc @ 100 Watts CW Pout
Typical Pout @ 1 dB Compression Point 120 Watts CW
Features
Production Tested in a Symmetrical Doherty Configuration
100% PAR Tested for Guaranteed Output Power Capability
Characterized with Large--Signal Load--Pull Parameters and Common
Source S--Parameters
On--Chip Matching (50 Ohm Input, DC Blocked)
Integrated Quiescent Current Temperature Compensation with Enable/Disable Function (1)
Integrated ESD Protection
Greater Negative Gate--Source Voltage Range for Improved Class C Operation
225°C Capable Plastic Package
RoHS Compliant
In Tape and Reel. R1 Suffix = 500 Units per 44 mm, 13 inch Reel.
CASE 1867--02
TO--270 WBL--16 GULL
PLASTIC
MD7IC18120GNR1
VDS1A
VGS2A
VGS1A
RFinA
RFinB
VGS1B
VGS2B
VDS1B
Quiescent Current
Temperature Compensation (1)
Quiescent Current
Temperature Compensation (1)
PEAKING (2)
RFoutA/VDS2A
RFoutB/VDS2B
CARRIER (2)
N.C.
VVGDSS21AA
VGNS.C1A.
RNF.iCnA.
N.C.
RNF.iCnB.
VGS1B
VGS2B
VDNS.C1B.
1
2
3
4
5
6
7
8
9
10
11
12
13
14
16 RFoutA/VDS2A
15 RFoutB/VDS2B
(Top View)
Note: Exposed backside of the package is
the source terminal for the transistors.
Figure 1. Functional Block Diagram
Figure 2. Pin Connections
1. Refer to AN1977, Quiescent Current Thermal Tracking Circuit in the RF Integrated Circuit Family and to AN1987, Quiescent Current Control
for the RF Integrated Circuit Device Family. Go to http://www.freescale.com/rf. Select Documentation/Application Notes -- AN1977 or AN1987.
2. Peaking and Carrier orientation is determined by the test fixture design.
© Freescale Semiconductor, Inc., 2010. All rights reserved.
RF Device Data
Freescale Semiconductor
MD7IC18120NR1 MD7IC18120GNR1
1


Freescale Semiconductor Electronic Components Datasheet

MD7IC18120NR1 Datasheet

RF LDMOS Wideband Integrated Power Amplifiers

No Preview Available !

MD7IC18120NR1 pdf
Table 1. Maximum Ratings
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Rating
Symbol
Value
Unit
Drain--Source Voltage
Gate--Source Voltage
Operating Voltage
Storage Temperature Range
Case Operating Temperature
Operating Junction Temperature (1,2)
CW Operation @ TC = 25°C
Derate above 25°C
VDSS
VGS
VDD
Tstg
TC
TJ
CW
--0.5, +65
--6.0, +10
32, +0
--65 to +150
150
225
175
1.5
Vdc
Vdc
Vdc
°C
°C
°C
W
W/°C
Input Power
Table 2. Thermal Characteristics
Pin 30 dBm
Characteristic
Symbol
Value (2,3)
Unit
Final Doherty Application
Thermal Resistance, Junction to Case
Case Temperature 78°C, Pout = 30 W CW, 1880 MHz
Stage 1A, 28 Vdc, IDQ1A = 70 mA
Stage 1B, 28 Vdc, IDQ1B = 160 mA
Stage 2A, 28 Vdc, VG2A = 1.7 Vdc
Stage 2B, 28 Vdc, IDQ2B = 500 mA
Table 3. ESD Protection Characteristics
RθJC
°C/W
4.5
4.5
0.88
0.88
Test Methodology
Class
Human Body Model (per JESD22--A114)
2 (Minimum)
Machine Model (per EIA/JESD22--A115)
A (Minimum)
Charge Device Model (per JESD22--C101)
III (Minimum)
Table 4. Moisture Sensitivity Level
Test Methodology
Rating
Package Peak Temperature
Unit
Per JESD22--A113, IPC/JEDEC J--STD--020
3 260 °C
1. Continuous use at maximum temperature will affect MTTF.
2. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF
calculators by product.
3. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf.
Select Documentation/Application Notes -- AN1955.
MD7IC18120NR1 MD7IC18120GNR1
2
RF Device Data
Freescale Semiconductor


Part Number MD7IC18120NR1
Description RF LDMOS Wideband Integrated Power Amplifiers
Maker Freescale Semiconductor
Total Page 18 Pages
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