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Fairchild Semiconductor Electronic Components Datasheet

SFF9250L Datasheet

Advanced Power MOSFET

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Advanced Power MOSFET
FEATURES
Logic-Level Gate Drive
Avalanche Rugged Technology
Rugged Gate Oxide Technology
Lower Input Capacitances
Improved Gate Charge
Extended Safe Operating Area
Lower Leakage Current : 10uA (Max.) @ VDS=-200V
Lower RDS(ON) : 0.175 (Typ.)
Absolute Maximum Ratings
Symbol
VDSS
ID
IDM
VGS
EAS
IAR
EAR
dv/dt
PD
TJ , TSTG
TL
Characteristic
Drain-to-Source Voltage
Continuous Drain Current (TC=25 °C)
Continuous Drain Current (TC=100 °C)
Drain Current-Pulsed
Gate-to-Source Voltage
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Total Power Dissipation (TC=25 °C)
Linear Derating Factor
Operating Junction and
Storage Temperature Range
Maximum Lead Temp. for Soldering
Purposes, 1/8from case for 5-seconds
Thermal Resistance
Symbol
RθJC
RθJA
Characteristic
Junction-to-Case
Junction-to-Ambient
SFF9250L
BVDSS = -200 V
RDS(on) = 0.23
ID = -12.6 A
TO-3PF
1
2
3
1.Gate 2. Drain 3. Source
Value
-200
-12.6
-7.9
-50.4
±20
990
-12.6
20.4
-5.0
90
0.72
- 55 to +150
300
Units
V
A
A
V
mJ
A
mJ
V/ns
W
W/ °C
°C
Typ.
--
--
Max.
0.61
40
Units
°C /W
Rev. A


Fairchild Semiconductor Electronic Components Datasheet

SFF9250L Datasheet

Advanced Power MOSFET

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SFF9250L pdf
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SFF9250L
P-CHANNEL
POWER MOSFET
Electrical Characteristics (TC=25°C unless otherwise specified)
Symbol
BVDSS
ΔBV/ΔTJ
VGS(th)
IGSS
IDSS
RDS(on)
gfs
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
Qg
Qgs
Qgd
Characteristic
Min. Typ. Max. Units
Test Condition
Drain-Source Breakdown Voltage
Breakdown Voltage Temp. Coeff.
Gate Threshold Voltage
Gate-Source Leakage , Forward
Gate-Source Leakage , Reverse
Drain-to-Source Leakage Current
-200 -- --
V VGS=0V,ID=-250μA
-- -0.17 -- V/ °C ID=-250μA See Fig 7
-1.0 -- -2.0 V VDS=-5V,ID=-250μA
-- -- 100 nA VGS=-20V
-- -- -100
VGS=20V
--
--
--
--
10
100
μA
VDS=-200V
VDS=-160V,TC=125 °C
Static Drain-Source
On-State Resistance
-- .175 0.23 VGS=-5V,ID=-6.3A
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
-- 13 -- S VDS=-40V,ID=-6.3A
-- 2500 3250
-- 400 520 pF VGS=0V,VDS=-25V,f =1MHz
See Fig 5
-- 210 270
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
-- 20 50
--
--
150 310
100 210
ns
VDD=-100V,ID=-12.6A,
RG=6.2
See Fig 13 ④ ⑤
-- 65 140
Total Gate Charge
Gate-Source Charge
Gate-Drain(Miller) Charge
-- 90 120
VDS=-160V,VGS=-5V,
-- 12 -- nC ID=-12.6A
-- 54 --
See Fig 6 & Fig 12 ④ ⑤
Source-Drain Diode Ratings and Characteristics
Symbol
IS
ISM
VSD
trr
Qrr
Characteristic
Min. Typ. Max. Units
Test Condition
Continuous Source Current
--
Pulsed-Source Current
--
-- -12.6
Integral reverse pn-diode
A
-- -50.4
in the MOSFET
Diode Forward Voltage
-- -- -1.5 V TJ=25 °C,IS=-12.6A,VGS=0V
Reverse Recovery Time
-- 260 -- ns TJ=25 °C,IF=-19.5A,VDD=-160V
Reverse Recovery Charge
-- 2.8 -- μC diF/dt=100A/μs
Notes ;
Repetitive Rating : Pulse Width Limited by Maximum Junction Temperature
L=3.9mH, IAS=-19.5A, VDD=-50V, RG=27, Starting TJ =25
ISD-19.5A, di/dt500A/μs, VDDBVDSS , Starting TJ =25
Pulse Test : Pulse Width 300μs, Duty Cycle 2%
Essentially Independent of Operating Temperature


Part Number SFF9250L
Description Advanced Power MOSFET
Maker Fairchild Semiconductor
Total Page 7 Pages
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