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Fairchild Semiconductor Electronic Components Datasheet

RFP40N10 Datasheet

40A/ 100V/ 0.040 Ohm/ N-Channel Power MOSFETs

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RFP40N10 pdf
Data Sheet
RFG40N10, RFP40N10, RF1S40N10,
RF1S40N10SM
January 2002
40A, 100V, 0.040 Ohm, N-Channel Power
MOSFETs
These are N-Channel power MOSFETs manufactured using
the MegaFET process. This process, which uses feature
sizes approaching those of LSI integrated circuits gives
optimum utilization of silicon, resulting in outstanding
performance. They were designed for use in applications
such as switching regulators, switching converters, motor
drivers, relay drivers and emitter switches for bipolar
transistors. These transistors can be operated directly from
integrated circuits.
Formerly developmental type TA9846
Ordering Information
PART NUMBER
PACKAGE
BRAND
RFG40N10
TO-247
RFG40N10
RFP40N10
TO-220AB
RFP40N10
RF1S40N10
TO-262AA
F1S40N10
RF1S40N10SM
TO-263AB
F1S40N10
NOTE: When ordering, use the entire part number. Add the suffix, 9A,
to obtain the TO-263AB variant in tape and reel, i.e. RF1S40N10SM9A.
Packaging
DRAIN
(FLANGE)
JEDEC STYLE TO-247
SOURCE
DRAIN
GATE
Features
• 40A, 100V
• rDS(ON) = 0.040
• UIS Rating Curve
• SOA is Power Dissipation Limited
• 175oC Operating Temperature
• Related Literature
- TB334 “Guidelines for Soldering Surface Mount
Components to PC Boards”
Symbol
D
G
S
JEDEC TO-220AB
DRAIN
(FLANGE)
SOURCE
DRAIN
GATE
JEDEC TO-263AB
GATE
SOURCE
DRAIN
(FLANGE)
JEDEC TO-262AA
DRAIN
(FLANGE)
SOURCE
DRAIN
GATE
©2002 Fairchild Semiconductor Corporation
RFG40N10, RFP40N10, RF1S40N10, RF1S40N10SM Rev. C


Fairchild Semiconductor Electronic Components Datasheet

RFP40N10 Datasheet

40A/ 100V/ 0.040 Ohm/ N-Channel Power MOSFETs

No Preview Available !

RFP40N10 pdf
RFG40N10, RFP40N10, RF1S40N10, RF1S40N10SM
Absolute Maximum Ratings TC = 25oC, Unless Otherwise Specified
Drain to Source Breakdown Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . VDSS
Drain to Gate Voltage (RGS = 1MΩ) (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . VDGR
Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGS
Drain Current
Continuous (Figure 2). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .ID
Pulsed Drain Current (Note 2) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IDM
Pulsed Avalanche Rating . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . EAS
Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PD
Derate Above 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TJ, TSTG
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from case for 10s . . . . . . . . . . . . . . . . . . . . . . . . . . . . TL
Package Body for 10s, see Techbrief 334 . . . . . . . . . . . . . . . . . . . . . . . . . . . . .Tpkg
RFG40N10, RFP40N10,
RF1S40N10, RF1S40N10SM
100
100
±20
40
100
Figures 4, 12, 13
160
1.07
-55 to 175
300
260
UNITS
V
V
V
A
A
W
W/oC
oC
oC
oC
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTES:
1. TJ = 25oC to 150oC.
2. Repetitive Rating: pulse width limited by maximum junction temperature.
Electrical Specifications TC = 25oC, Unless Otherwise Specified
PARAMETER
SYMBOL
TEST CONDITIONS
Drain to Source Breakdown Voltage
Gate Threshold Voltage
Zero Gate Voltage Drain Current
Gate to Source Leakage Current
Drain to Source On Resistance
Turn-On Time
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-Off Time
Total Gate Charge
Gate Charge at 10V
Threshold Gate Charge
Thermal Resistance Junction to Case
Thermal Resistance Junction to Ambient
BVDSS
VGS(TH)
IDSS
IGSS
rDS(ON)
tON
td(ON)
tr
td(OFF)
tf
tOFF
Qg(TOT)
Qg(10)
Qg(TH)
RθJC
RθJA
ID = 250µA, VGS = 0V (Figure 9)
VGS = VDS, ID = 250µA (Figure 8)
VDS = 80V,
VGS = 0V
TC = 25oC
TC = 150oC
VGS = ±20V
ID = 40A, VGS = 10V (Figure 7)
VDD = 50V, ID = 20A,
RL = 2.5, VGS = 10V, RGS = 4.2
(Figure 11)
VGS = 0V to 20V
VGS = 0V to 10V
VGS = 0V to 2V
VDD = 80V,
ID = 40A,
RL = 2.0
(Figures 11)
TO-247
TO-220AB and TO-263AB
Source to Drain Diode Specifications
PARAMETER
Source to Drain Diode Voltage
Reverse Recovery Time
SYMBOL
TEST CONDITIONS
VSD
trr
ISD = 40A
ISD = 40A, dISD/dt = 100A/µs
MIN TYP MAX UNITS
100 - - V
2-4 V
- - 1 µA
- - 50 µA
- - ±100 nA
- - 0.040
- - 80 ns
- 17 -
ns
- 30 -
ns
- 42 -
ns
- 20 -
ns
- - 100 ns
- - 300 nC
- - 150 nC
- - 7.5 nC
- - 0.94 oC/W
- - 30 oC/W
- - 62 oC/W
MIN TYP MAX UNITS
- - 1.5 V
- - 200 ns
©2002 Fairchild Semiconductor Corporation
RFG40N10, RFP40N10, RF1S40N10, RF1S40N10SM Rev. C


Part Number RFP40N10
Description 40A/ 100V/ 0.040 Ohm/ N-Channel Power MOSFETs
Maker Fairchild Semiconductor
Total Page 6 Pages
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