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Fairchild Semiconductor Electronic Components Datasheet

L14F2 Datasheet

HERMETIC SILICON PHOTODARLINGTON

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L14F2 pdf
PACKAGE DIMENSIONS
0.195 (4.95)
0.178 (4.52)
0.230 (5.84)
0.209 (5.31)
0.030 (0.76)
NOM
0.255 (6.47)
0.225 (5.71)
0.500 (12.7)
MIN
HERMETIC SILICON
PHOTODARLINGTON
L14F1 L14F2
0.100 (2.54)
0.050 (1.27)
2
0.038 (0.97)
0.046 (1.16)
0.036 (0.92)
13
45°
Ø0.020 (0.51) 3X
NOTES:
1. Dimensions for all drawings are in inches (mm).
2. Tolerance of ± .010 (.25) on all non-nominal dimensions
unless otherwise specified.
SCHEMATIC
(CONNECTED TO CASE)
COLLECTOR
3
BASE 2
1
EMITTER
DESCRIPTION
The L14F1/L14F2 are silicon photodarlingtons mounted in a narrow angle, TO-18 package.
FEATURES
• Hermetically sealed package
• Narrow reception angle
2001 Fairchild Semiconductor Corporation
DS300306 6/01/01
1 OF 4
www.fairchildsemi.com


Fairchild Semiconductor Electronic Components Datasheet

L14F2 Datasheet

HERMETIC SILICON PHOTODARLINGTON

No Preview Available !

L14F2 pdf
HERMETIC SILICON
PHOTODARLINGTON
L14F1 L14F2
ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise specified)
Parameter
Operating Temperature
Storage Temperature
Soldering Temperature (Iron)(3,4,5 and 6)
Soldering Temperature (Flow)(3,4 and 6)
Collector to Emitter Breakdown Voltage
Collector to Base Breakdown Voltage
Emitter to Base Breakdwon Voltage
Power Dissipation (TA = 25°C)(1)
Power Dissipation (TC = 25°C)(2)
Symbol
TOPR
TSTG
TSOL-I
TSOL-F
VCEO
VCBO
VEBO
PD
PD
Rating
-65 to +125
-65 to +150
240 for 5 sec
260 for 10 sec
25
25
12
300
600
Unit
°C
°C
°C
°C
V
V
V
mW
mW
NOTE:
1. Derate power dissipation linearly 3.00 mW/°C above 25°C ambient.
2. Derate power dissipation linearly 6.00 mW/°C above 25°C case.
3. RMA flux is recommended.
4. Methanol or isopropyl alcohols are recommended as cleaning agents.
5. Soldering iron tip 1/16” (1.6mm) minimum from housing.
6. As long as leads are not under any stress or spring tension.
7. Light source is a GaAs LED emitting light at a peak wavelength of 940 nm.
8. Figure 1 and figure 2 use light source of tungsten lamp at 2870°K color temperature. A GaAs source of 0.05 mW/cm2 is approximately
equivalent to a tungsten source, at 2870°K, of 0.2 mW/cm2.
ELECTRICAL / OPTICAL CHARACTERISTICS (TA =25°C) (All measurements made under pulse conditions)
PARAMETER
Collector-Emitter Breakdown
Emitter-Base Breakdown
Collector-Base Breakdown
Collector-Emitter Leakage
Reception Angle at 1/2 Sensitivity
On-State Collector Current L14F1
On-State Collector Current L14F2
Rise Time
Fall Time
TEST CONDITIONS
SYMBOL MIN
TYP
MAX
UNITS
IC = 10 mA, Ee = 0
BVCEO
25
—V
IE = 100 µA, Ee = 0
BVEBO
12
—V
IC = 100 µA, Ee = 0
BVCBO
25
—V
VCE = 12 V, Ee = 0
ICEO
100 nA
θ ±8 Degrees
Ee = .125 mW/cm2, VCE = 5 V(7)
Ee = .125 mW/cm2, VCE = 5 V(7)
IC(ON)
IC(ON)
7.5
2.5
— mA
mA
IC = 10 mA, VCC = 5 V, RL =100
tr
300 µs
IC = 10 mA, VCC = 5 V, RL =100
tf
250 µs
www.fairchildsemi.com
2 OF 4
6/01/01 DS300306


Part Number L14F2
Description HERMETIC SILICON PHOTODARLINGTON
Maker Fairchild Semiconductor
Total Page 4 Pages
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