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Fairchild Semiconductor Electronic Components Datasheet

J110 Datasheet

N-Channel Switch

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J110 pdf
J108/J109/J110/MMBFJ108
N-Channel Switch
• This device is designed for digital switching
applications where very low on resistance is
mandatory.
• Sourced from Process 58.
3
1 TO-92
1. Drain 2. Source 3. Gate
2
1 SuperSOT-3
Marking: I8
1. Drain 2. Source 3. Gate
Absolute Maximum Ratings * TA=25°C unless otherwise noted
Symbol
Parameter
VDG Drain-Gate Voltage
VGS Gate-Source Voltage
IGF Forward Gate Current
TJ, Tstg
Operating and Storage Junction Temperature Range
* These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
Value
25
-25
10
-55 ~ +150
NOTES:
1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Units
V
V
mA
°C
Electrical Characteristics TA=25°C unless otherwise noted
Symbol
Parameter
Test Condition
Off Characteristics
V(BR)GSS
IGSS
VGS(off)
Gate-Source Breakdwon Voltage
Gate Reverse Current
Gate-Source Cutoff Voltage
IG = -10µA, VDS = 0
VGS = -15V, VDS = 0
VGS = -15V, VDS = 0, TA = 100°C
VDS = 15V, ID = 10nA
108
109
110
On Characteristics
IDSS
Zero-Gate Voltage Drain Current * VDS = 15V, IGS = 0
108
109
110
rDS(on)
Drain-Source On Resistance
VDS 0.1V, VGS = 0
108
109
110
Small Signal Characteristics
Cdg(on)
Csg(off)
Drain Gate & Source Gate On
Capacitance
Cdg(on)
Drain-Gate Off Capacitance
Csg(off)
Source-Gate Off Capacitance
* Pulse Test: Pulse Width 300µs, Duty Cycle 2.0%
VDS = 0, VGS = 0, f = 1.0MHz
VDS = 0, VGS = -10, f = 1.0MHz
VDS = 0, VGS = -10, f = 1.0MHz
Min. Max. Units
-25
-3.0
-200
-3.0 -10
-2.0 -6.0
-0.5 -4.0
V
nA
nA
V
V
V
80 mA
40 mA
10 mA
8.0
12
18
85 pF
15 pF
15 pF
©2002 Fairchild Semiconductor Corporation
Rev. B1, November 2002


Fairchild Semiconductor Electronic Components Datasheet

J110 Datasheet

N-Channel Switch

No Preview Available !

J110 pdf
Thermal Characteristics TA=25°C unless otherwise noted
Symbol
Parameter
PD Total Device Dissipation
Derate above 25°C
RθJC
Thermal Resistance, Junction to Case
RθJA
Thermal Resistance, Junction to Ambient
* Device mounted on FR-4 PCB 1.6” × 1.6” × 0.06"
Max.
J108 - 110
*MMBFJ108
625 350
5.0 2.8
125
357 556
Units
mW
mW/°C
°C/W
°C/W
©2002 Fairchild Semiconductor Corporation
Rev. B1, November 2002


Part Number J110
Description N-Channel Switch
Maker Fairchild Semiconductor
Total Page 7 Pages
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