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Fairchild Semiconductor Electronic Components Datasheet

FDP10N60ZU Datasheet

MOSFET

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FDP10N60ZU pdf
FDP10N60ZU / FDPF10N60ZUT
N-Channel MOSFET, FRFET
600V, 9A, 0.8Ω
April 2009
UniFETTM
tm
Features
• RDS(on) = 0.65Ω ( Typ.)@ VGS = 10V, ID = 4.5A
• Low gate charge ( Typ. 31nC)
• Low Crss ( Typ. 15pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability
• RoHS compliant
Description
These N-Channel enhancement mode power field effect
transistors are produced using Fairchild’s proprietary, planar
stripe, DMOS technology.
This advance technology has been especially tailored to
minimize on-state resistance, provide superior switching
performance, and withstand high energy pulse in the avalanche
and commutation mode. These devices are well suited for high
efficient switching mode power supplies and active power factor
correction.
D
GDS
TO-220
FDP Series
GD S
TO-220F
FDPF Series
G
MOSFET Maximum Ratings TC = 25oC unless otherwise noted*
Symbol
VDSS
VGSS
ID
IDM
EAS
IAR
EAR
dv/dt
PD
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current
Drain Current
-Continuous (TC = 25oC)
-Continuous (TC = 100oC)
- Pulsed
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Power Dissipation
(TC = 25oC)
- Derate above 25oC
TJ, TSTG
Operating and Storage Temperature Range
TL
Maximum Lead Temperature for Soldering Purpose,
1/8” from Case for 5 Seconds
*Drain current limited by maximum junction temperature
Thermal Characteristics
S
FDP10N60ZU FDPF10N60ZUT
600
±30
9 9*
5.4 5.4*
(Note 1)
36
36*
(Note 2)
100
(Note 1)
9
(Note 1)
18
(Note 3)
20
180 42
1.45 0.3
-55 to +150
Units
V
V
A
A
mJ
A
mJ
V/ns
W
W/oC
oC
300 oC
Symbol
RθJC
RθCS
RθJA
Parameter
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Ambient
FDP10N60ZU FDPF10N60ZUT Units
0.7 3.0
0.5 - oC/W
62.5 62.5
©2009 Fairchild Semiconductor Corporation
FDP10N60ZU/FDPF10N60ZUT Rev. A
1
www.fairchildsemi.com


Fairchild Semiconductor Electronic Components Datasheet

FDP10N60ZU Datasheet

MOSFET

No Preview Available !

FDP10N60ZU pdf
Package Marking and Ordering Information
Device Marking
FDP10N60ZU
FDPF10N60ZUT
Device
FDP10N60ZU
FDPF10N60ZUT
Package
TO-220
TO-220F
Reel Size
-
-
Tape Width
-
-
Quantity
50
50
Electrical Characteristics TC = 25oC unless otherwise noted
Symbol
Parameter
Test Conditions
Min.
Off Characteristics
BVDSS
ΔBVDSS
ΔTJ
Drain to Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
IDSS Zero Gate Voltage Drain Current
IGSS
Gate to Body Leakage Current
ID = 250μA, VGS = 0V, TJ = 25oC
ID = 250μA, Referenced to 25oC
VDS = 600V, VGS = 0V
VDS = 480V, TC = 125oC
VGS = ±30V, VDS = 0V
600
-
-
-
-
On Characteristics
VGS(th)
RDS(on)
gFS
Gate Threshold Voltage
Static Drain to Source On Resistance
Forward Transconductance
VGS = VDS, ID = 250μA
VGS = 10V, ID = 4.5A
VDS = 40V, ID = 4.5A
3.0
-
-
Dynamic Characteristics
Ciss
Coss
Crss
Qg(tot)
Qgs
Qgd
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge at 10V
Gate to Source Gate Charge
Gate to Drain “Miller” Charge
VDS = 25V, VGS = 0V
f = 1MHz
VDS = 480V, ID = 10A
VGS = 10V
(Note 4)
-
-
-
-
-
-
Switching Characteristics
td(on)
tr
td(off)
tf
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
VDD = 300V, ID = 10A
RG = 25Ω , VGS = 10V
(Note 4)
-
-
-
-
Drain-Source Diode Characteristics
IS Maximum Continuous Drain to Source Diode Forward Current
ISM Maximum Pulsed Drain to Source Diode Forward Current
VSD
Drain to Source Diode Forward Voltage
VGS = 0V, ISD = 10A
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
VGS = 0V, ISD = 10A
dIF/dt = 100A/μs
Notes:
1. Repetitive Rating: Pulse width limited by maximum junction temperature
2. L = 2mH, IAS = 10A, VDD = 50V, RG = 25Ω, Starting TJ = 25°C
3. ISD 10A, di/dt 200A/μs, VDD BVDSS, Starting TJ = 25°C
4. Essentially Independent of Operating Temperature Typical Characteristics
-
-
-
-
-
Typ.
-
0.8
-
-
-
-
0.65
12.5
1490
230
15
31
8
12
25
40
95
60
-
-
-
45
52
Max. Units
-V
- V/oC
25
μA
250
±10 μA
5.0 V
0.8 Ω
-S
1980
240
25
40
-
-
pF
pF
pF
nC
nC
nC
60 ns
90 ns
200 ns
130 ns
9A
36 A
1.6 V
- ns
- nC
FDP10N60ZU/FDPF10N60ZUT Rev. A
2
www.fairchildsemi.com


Part Number FDP10N60ZU
Description MOSFET
Maker Fairchild Semiconductor
Total Page 9 Pages
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